• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.821-825
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• 2015

Anti-reflective (AR) thin film was fabricated on a glass substrate by sol-gel method. The coating solution was synthesized with TEOS (tetraethlyorthosilicate) and poly ethylene glycol (PEG, 4.0 wt%). As the withdrawal speed of coating was changed from 0.1 mm/sec to 0.3 mm/sec, the thickness and refractive index of prepared thin films were changed. The reflectance and transmittance of coating glass fabricated by the withdrawal speed of 0.1 mm/sec were 0.62% and 95.0% in visible light range. The refractive index and thickness of single layer thin film were n= 1.29 and ca. 99.0 nm.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.911-919
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• 1994

As the study for preparation of single-layer anti-reflective coating on glass, the conditions of synthesis of sol for coating and of reproducible coating procedure were investigated. In case of water-based sol, coating was impossible because of poor wettability of sol. The Substitution of solvent with ethanol improved the wettability of sol on the glass surface, and optimum amount of ethanol for substitution was 70 vol%. Maximum specific surface area and total pore volume of water-based sol were 268.7$m^2$/g and 0.315 cc/g, but after substitution, those values increased to 404.1 $m^2$/g and 0.376 cc/g, respectively. The upper limit withdrawl speed of coating in order to get clean coated films without aggregations or stains was 7 cm/min. In case of addition of 0.1 mol HNO3 and substitution with 70 vol% ethanol and heat-treatment at 40$0^{\circ}C$ for 1 hour, thin film with thickness of 94 nm was obtained at withdrawl speed of 4 cm/min. The thickness of thin film was independent of drying time.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.159-163
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• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.1-6
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• 2017

Functional coatings, such as anti-reflection and self-cleaning, are frequently applied to cover glass for photovoltaic applications. Anti-reflection coatings made of mesoporous silica film have been shown to enhance the light transmittance. $TiO_2$ photocatalyst films are often applied as a self-cleaning coating. In this study, transparent hydrophobic anti-reflective and self-cleaning coatings made of $SiO_2/TiO_2$ thin layers were fabricated on a slide glass substrate by the sol-gel and dip-coating processes. The morphology of the functional coatings was characterized by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The optical properties of the functional coatings were investigated using an UV-visible spectrophotometer. Contact angle measurements were performed to confirm the hydrophobicity of the surface. The results showed that the $TiO_2$ films exhibit a high transmittance comparable to that of the bare slide glass substrate. The $TiO_2$ nanoparticles make the film more reflective and lead to a lower transmittance. However, the transmittance of the $SiO_2/TiO_2$ thin layers is 93.5% at 550 nm with a contact angle of $110^{\circ}$, which is higher than that of the bare slide glass (2.0%).

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.79-87
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• 1997

Anti-reflective and anti-static double layered films were prepared on the VDT panel by sol-gel spin-coating method. Their electrical, opticla, and mechanical properties were investigated. The outer SiO2 film with low re-fractive index was coated over the inner ATO(Antimony-doped Tin Oxide)-SiO2 film which was prepared by mixing ATO sol with SiO2 at molar ratio of 68:32 to satisfy the interference condition of double layers. The heat treatment was conducted at 45$0^{\circ}C$ for 30 min where residual organics were completely removed. The sheet resistance of ATO single layer showed the minimum value of 6$\times$107$\Omega$/$\square$ at 3 mol% addition of Sb and that of SiO2/ATO-SiO2 increased slightly with increasing SiO2 mol% up to 30 mol%, and then increased steeply to the value of 3$\times$108$\Omega$/$\square$ at 32 mol%. The reflectance of double layered films was about 0.64% at the wavelength of 550nm and the transmittance increased about 3.20%. The hardness of double layered films was almost the same as that of uncoated VDT panel, 471.4kg.f/mm2.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.524-530
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• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.7-11
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• 2000

The anti-reflective anti-static (ARAS) optical film is designed using absorbent materials such as ITO, $TiN_xW_y$, Ag by Essential Macleod program. [air ${\mid}TiN_xW_y{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The reflectivity, transmittance of this coating are below 0.5%, about 75%, respectively. [air $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$, ITO glass] layer can adjust reflectance of below 0.5% with above 97% transmittance. In the [air ${\mid}SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$ Ag glass] layer, the transmission can be controlled at above 96% with reflectance of 1~2%.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.2
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• pp.31-35
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• 2001

The anti-reflective anti-static(ARAS) optical film Was designed using conducting layer $TiN_x$ by Essential Macleod program. From this results, [air ${TiN_x{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The $TiN_x$ thin films were prepared on the glass substrate by RF(radio-freqency) magnetron sputtering apparatus from a Ti target in agaseous mixture of argon and nitrogen with the thickness of 7~10 nm. For the films obtained, the chemical binding energy of the films was investigated by x-ray photoelectron spectroscopy(XPS) in order to analyze the chemical nature and composition of the films. In addition, we investigated the relationship between the surface resistance and the chemical nature the sheet resistance and XPS depth profiling the chemical binding of the films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.7.1-7.1
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• 2011

Nanoporous templates have been widely used for the development of new functional nanostructured materials suitable for electronics, optics, magnetism, and energy storage materials. We have prepared nanoporous templates by using thin films of mixtures of polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) and PMMA homopolymers. These templates have cylindrical nanoholes spanning the entire thickness of the film. Some applications of nanoporous templates are introduced: a) anti-reflective coating, b) the preparation of conducting polymer nanowires of poly (pyrrole), poly (3,4-ethylenedioxy-thiopene) onto a glass coated with indium-tin-oxide, and c) the separation membranes for biomaterials. We found that when the pore fraction of nanoholes in the film was ~0.68, almost zero reflectance at a specific wavelength, which can be changed with film thickness, was achieved at visible wavelengths Furthermore, ultra high density array of conducting nanowires was successfully prepared onto various substrates including flexible polymer. Due to highly alignment of polymer chain along the nanowire direction, the conductivity was much increased. Furthermore, these nanoporous films were found to be very effective for the separation of human Rhinovirus type 14 (HRV 14), major pathogen of a common cold in humans, from the buffer solution. We also found that when the pore size was effectively controlled down to 6 nm, a single file diffusion was observed.

• Solar Energy
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• v.6 no.2
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• pp.70-75
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• 1986

The fabrication procedure and characteristics of $Ta_2O_5/Al/SiO_2/p-Si$ MIS solar cells forming a fine grating pattern of aluminum evaporated on to p-type silicon crystal are discribed. The proper temperature for oxide growing of these cells was found to be about $450^{\circ}C$ for 20 minutes with oxygen flow. The conversion efficiency increased about 3% after $750{\AA}$ thickness of tantalium silica film spin on anti-reflective coating. The best results showed that $V_{oc}=0.545V,\;J_{sc}=34mA$ and F.F = 0.65, which represent that the conversion efficiency is 12%.