• Corrosion Science and Technology
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• v.4 no.6
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• pp.217-221
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• 2005

In the present investigation, holographic interferometry was utilized for the first time to monitor in situ the thickness of the oxide film of aluminium samples during anodization processes in boric acid solutions. The anodization process (oxidation) of the aluminium samples was carried out by the technique of the electrochemical impedance spectroscopy(EIS), in different concentrations of boric acid (0.5-5.0% $H_3BO_3$) at room temperature. In the mean time, the real-time holographic interferometry was used to measure the thickness of anodized (oxide) film of the aluminium samples in solutions. Consequently, holographic interferometry is found very useful for surface finish industries especially for monitoring the early stage of anodization processes of metals, in which the thickness of the anodized film of the aluminium samples can be determined without any physical contact. In addition, measurements of electrochemical values such as the alternating current (A.C) impedance(Z), the double layer capacitance($C_{dl}$), and the polarization resistance(Rp) of anodized films of aluminium samples in boric acid solutions were made by the electrochemical impedance spectroscopy(EIS). Attempts to measure electrochemical values of Z, Cdl, and Rp were not possible by holographic interferometry in boric acid especially in low concentrations of the acid. This is because of the high rate of evolutions of interferometric fringes during the anodization process of the aluminium samples in boric acid, which made measurements of Z, Cdl, and Rp are difficult.

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.149-157
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• 2002

Spectral emissivity depends on the surface conditions of the materials. The mechanisms that affect the spectral emissivity in anodic oxide films on aluminum were investigated. The aluminum specimens were anodized in a sulfuric acid solution and the thickness of the resulting oxide film formed changed with the anodizing time. FT-IR spectrum analysis identified the anodic oxide film as boehmite ($Al_2$$O_3$.$H_2$O). Both the infrared emisivity and reflectivity of the anodized aluminum were affected by the structure of the anodic oxide film because Al-OH and Al-O-Al have a pronounced absorption band in the infrared region of the spectrum. The presence of an anodic oxide film on aluminum caused a rapid drop in the infrared reflectivity. An aluminum surface in the clean state had an emissivity of approximately 0.2. However, the infrared emissivity rapidly increased to 0.91 as the thickness of the anodic oxide film increased.

• Journal of the Korean institute of surface engineering
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• v.45 no.5
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• pp.198-205
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• 2012

The corrosion properties of anodized films on aluminium 6070 alloy in a sulfuric acid have been studied. Comparison to evaluate the anodized A6070 and pure 6070 specimen, corrosion tests in $HNO_3$ vapor environment of the 20 wt.% were performed up to 72 hours. Characteristics of film formation and surface morphology were examined by optical microscopy, FE-SEM, and EDS. The oxide film anodized in the sulfuric acid solution contained 5 to 10 wt.% of sulfur. In the initial stages of corrosion, anodized specimens exhibited corrosion resistance than the pure specimen. However, the corrosion conditions in 24 hours, corrosion was far more anodized specimen than pure specimen. Therefore, anodized films contained sulfur, nitric acid vapor in the environment is thought to stimulate corrosion.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.31 no.9
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• pp.74-81
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• 1982

One of the stable thin film transistor fabricated by cadmium suifide with the anodized aluminium oxide as gate material. The principle of the operation for the device is based on the control mechanism of injected majority carricrs to the wide band gap semiconductor, that is cadmium sulfide, by means of the function of the gate control. The fabricated device constructed by evaporating CdS layer in the form of microcrystalline on the oxided thin film characterized by ea, 80 as voltage amplification factor, 1/100 mho as transconductance, 8 kohm as dynamic output resistance, furthermore gain band width products is about 15 MHz.

• Journal of the Korean institute of surface engineering
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• v.49 no.4
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• pp.357-362
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• 2016

In this study, we manufactured the anodized alumina oxide (AAO) template and fabricated the carbon nanofibers and manganese oxide nanofibers using AAO template for application to electrochemical capacitor. Pore diameters of the AAO template were increased from 50 to 90 nm by increasing the acid treatment time after two-step anodizing process. Furthermore nanofibers, which is fabricated by AAO template, showed uniform diameter and micro structure. It is suggested that the surface area is larger than commercial electrode material and it is enhancing the energy density by increasing the specific capacitance.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.372.2-372.2
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• 2016

Various nanobiosensors have been developed and extensively investigated. For their practical applications, however, the reproducibility and uniformity should be good enough and the mass-production should be possible. To fabricate anodized aluminium oxide (AAO)-based nanobiosesnor on wafer scale, we have designed and constructed a wafer-scale anodizing system. $1{\mu}m$-thick-aluminum is deposited on 4 inch SiO2/Si substrate and then anodized, resulting in uniform nanopores with an average pore diameter of about 65 nm. Furthermore, most AAO sensors constructed on this wafer provide capacitance values of 30 nF ~ 60 nF in PBS, demonstrating their uniformity.

• Corrosion Science and Technology
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• v.15 no.4
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• pp.166-170
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• 2016

The combined process of porous type anodizing and desiccation treatment was applied to improve wettability of A1050 aluminum alloy. The water contact angles of anodized samples were increaseds considerably with desiccation treatment. However, there was no considerable effect of polishing and anodizing time on water contact angle. The corrosion behavior with the treatments was investigated electrochemically. The corrosion resistance of the samples in 3.5 mass% NaCl solutions increased with higher contact angle. Anodized and desiccated samples showed better corrosion resistance than un-desiccated samples around rest potential region.

• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.309-318
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• 2000

The 6063 Aluminium alloy were electrocolored and anodized at the same time in addition of $CoSO_4$, $FeSO_4$, in the electrolyte and investigated by AES/SAM. It was found that the thickness of anodic oxide film is increased linearly in DC type, and DC combined AC type, the more ratio of anodic Portion in AC, the more increased of anodic film thickness. The color of anodic film was changed from silver to yellow when the increase of the ratio of cathodic portion in AC. Also the increase of $CoSO_4$, $FeSO_4$ in the electrolyte, the coloring time is decreased. From the AES/SAM results, the element of anodic oxide film are Al,O and S. The result of depth profile, the most of the S distributed on the surface and the more S is in DC combined AC type than only DC type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.315-316
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• 2006

We fabricated GaN nanopores m the etching process of anodic oxidation of aluminum. The aluminum was deposited by using E-beam evaporator on p-type GaN. After the aluminum was anodized GaN structure was exposed to the electric field with the oxidat species. The fabricated nanopore structure provides the enhanced intensity of light emission at the wavelengths 470 nm. We investigated the structure of the GaN nanopores from FE-SEM and EDS measurements.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.375-381
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• 2000

Aluminium foil for electrolytic capacitors was anodized at the voltage of 100V and 140V for 10 minutes in ammonium adipate solution to form aluminum oxide layer on aluminum substrate as an dielectric film. The thickness, the stoichiometry and the crystal structure of the layer were investigated by using RBS and TEM . In addition EIS technique was employed to study the effects of addition of sulfuric acid on the increment of the foil surface area. It was found that the thickness values of the layers anodized at 100V and 140V were about 130 nm and 190 nm respectively and the stoichiometry of the elements of aluminum and oxygen was 2:3. The anodic oxide layer was shown to be amorphous. but the structure irradiated with electron beam resulted in the transformation into crystalline structure of $${\gamma}$-Al_2$$O_3$ . From a comparison of the impedance results and the capacitance variation to investigate the ef- fects of sulfuric acid addition to the etching bath of hydrochloric acid, the EIS techinque could be useful to analyze the capacitance variation.