• Journal of Powder Materials
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• v.22 no.4
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• pp.240-246
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• 2015

Anodic aluminum oxide (AAO) has been widely used for the development and fabrication of nano-powder with various morphologies such as particle, wire, rod, and tube. So far, many researchers have reported about shape control and fabrication of AAO films. However, they have reported on the shape control with different diameter and length of anodic aluminum oxide mainly. We present a combined mild-hard (or hard-mild) anodization to prepare shape-controlled AAO films. Two main parameters which are combination mild-hard (or hard-mild) anodization and run-time of voltage control are applied in this work. The voltages of mild and hard anodization are respectively 40 and 80 V. Anodization was conducted on the aluminum sheet in 0.3 mole oxalic acid at $4^{\circ}C$. AAO films with morphologies of varying interpore distance, branch-shaped pore, diameter-modulated pore and long funnel-shaped pore were fabricated. Those shapes will be able to apply to fabricate novel nano-materials with potential application which is especially a support to prevent volume expansion of inserted active materials, such as metal silicon or tin powder, in lithium ion battery. The silicon powder electrode using an AAO as a support shows outstanding cycle performance as 1003 mAh/g up to 200 cycles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.923-928
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• 2010

Anodic aluminum oxide (AAO) nanotemplates for nano electronic device applications have been attracting increasing interest because of ease of fabrication, low cost process, and possible fabrication in large area. The size and density of the nanostructured materials can be controlled by changing the pore diameter and the pole density of AAO nanotemplate. In this paper, nano porous alumina films AAO nanotemplate was fabricated by second anodization method using sputterd Al films. In addition, effects of electrolyte temperature and anodization voltate on the microstructure of porous alumina films were investigated. As the electrolyte temperature was increased from $8^{\circ}C$ to $20^{\circ}C$, the growth rate of nanoporous alumina films was increased from 86.2 nm/min to 179.5 nm/min. The AAO nanotemplate fabricated with optimal condition had the mean pore diameter of 70 nm and the pore depth of $1\;{\mu}m$.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.528-532
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• 2002

Anodic $TiO_2$film on Ti substrate was fabricated at 180V in sulfuric acid solutions containing phosphoric acid and hydrogen peroxide. Effects of the anodizing conditions on the morphology of the oxide layers, and chemical states of the component elements of the layers were studied primarily using SEM, XRD, AFM, and XPS. The pores in the oxide layer was not uniform in size, shape, and growth direction particularly near the interface between the substrate and the oxide layer, compared with those of the surface layer. The formation of irregular type of pores seemed to be attributed to spark discharge phenomena which heavily occurred during increasing the anodic voltage. The pore diameter and the cell size increased, and the number of cells per unit area decreased with the increasing time. From the XPS results, it was shown that component elements of the electrolytes, P and S, existed in the chemical states of $PO_4^{-3}$ , $P_2$$O_{5}$, $SO_4^{-2}$ , $SO_3^{-2}$ , P, S, etc., which were penetrated from the electrolytes into the oxide layer during anodization.

• Journal of the Korean Chemical Society
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• v.56 no.5
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• pp.542-547
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• 2012

We have investigated the electronic properties of the oxide film and anodic oxidation mechanism. Iron was oxidized by two reaction pathways depending on pH. The oxide film has showed the electronic properties of n-type semiconductor based on the Mott-Schottky equation.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.235-238
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• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.54-54
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• 2009

AFM anodic oxidation has the capability of patterning complex nano-patterns under relatively high speeds and low voltage. We report the fabrication using a atomic force microscopy (AFM) of silicon nano-ribbon and nano-field effect transistors (FETs). The fabricated nano-patterns have great potential characteristics in various fields due to their interesting electronic, optical and other profiles. The results shows that oxide width and the separation between the oxide patterns can be optimally controlled. The subsequently fabricated silicon nano-ribbon and nano-FET working devices were controled by various tip-sample bias-voltages and scan speed of AFM anodic oxidation. The results may be applied for highly integration circuits and sensitive optical sensor applications.

• Journal of Powder Materials
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• v.22 no.3
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• pp.216-220
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• 2015

Vertically oriented nickel nanowire arrays with a different diameter and length are synthesized in porous anodic aluminium oxide templates by an electrodeposition method. The pore diameters of the templates are adjusted by controlling the anodization conditions and then they are utilized as templates to grow nickel nanowire arrays. The nickel nanowires have the average diameters of approximately 25 and 260 nm and the crystal structure, morphology and microstructure of the nanowires are systematically investigated using XRD, FE-SEM and TEM analysis. The nickel nanowire arrays show a magnetic anisotropy with the easy axis parallel to the nanowires and the coercivity and remanence enhance with decreasing a wire diameter and increasing a wire length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.62-63
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• 2008

Photonic crystas were fabricated using an anodic aluminum oxide(AAO) mask on GaN diode. The Photonic crystal structure has been investigated from Atomic Force Microscope(AFM). The hole diameter and lattice constant of photonic crystal are 60nm and 105nm, respectively. Photoluminescence of photonic crystal was enhanced and optical interference was increased by photonic crystal effect.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.427-431
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• 2017

Anodic aluminum oxide (AAO) film has recently attracted much attention as a key material for the fabrication of various nanostructures. A control of anodizing voltage (U) was employed to render different anodic aluminum oxide (AAO) nanostructures with pore diameter ($D_p$) and interpore distance ($D_{int}$) in oxalic acid. In this work, we study the effect of stepwise modulation of anodizing voltages on the shape and dimension of porous structures along the vertical direction and demonstrate the fabrication of hierarchical layers of systematically controlled three-dimensional (3D) pore profile.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.9-13
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• 2018

Samples of anodic oxide film used in semiconductor and display manufacturing processes were prepared at different electrolyte temperatures to investigate the corrosion resistance. The anodic oxide film was grown on aluminum alloy 6061 by using a sulfuric acid ($H_2SO_4$) electrolyte of 1.5 M at $0^{\circ}C$, $5^{\circ}C$, $10^{\circ}C$, $15^{\circ}C$, and $20^{\circ}C$. The insulating properties of the samples were evaluated by measuring the breakdown voltage, which gradually increased from 0.43 kV ($0^{\circ}C$) to 0.52 kV ($5^{\circ}C$), 1.02 kV ($10^{\circ}C$), and 1.46 kV ($15^{\circ}C$) as the electrolyte temperature was increased from $0^{\circ}C$ to $15^{\circ}C$, but then decreased to 1.24 kV ($20^{\circ}C$). To evaluate the erosion of the film by fluorine plasma, the plasma erosion and the contamination particles were measured. The plasma erosion was evaluated by measuring the breakdown voltage after exposing the film to $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas. With exposure to $CF_4/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.41 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0.83 kV. With exposure to $NF_3/O_2/Ar$ plasma, the breakdown voltage of the film slightly decreased at $0^{\circ}C$, by 0.38 kV; however, the breakdown voltage significantly decreased at $20^{\circ}C$, by 0. 77 kV. In addition, for the entire temperature range, the breakdown voltage decreased more when sample was exposed to $NF_3/O_2/Ar$ plasma than to $CF_4/O_2/Ar$ plasma. The decrease of the breakdown voltage was lower in the anodic oxide film samples that were grown slowly at lower temperatures. The rate of breakdown voltage decrease after exposure to fluorine plasma was highest at $20^{\circ}C$, indicating that the anodic oxide film was most vulnerable to erosion by fluorine plasma at that temperature. Contamination particles generated by exposure to the $CF_4/O_2/Ar$ and $NF_3/O_2/Ar$ plasmas were measured on a real-time basis. The number of contamination particles generated after the exposure to the respective plasmas was lower at $5^{\circ}C$ and higher at $0^{\circ}C$. In particular, for the entire temperature range, about five times more contamination particles were generated with exposure to $NF_3/O_2/Ar$ plasma than for exposure to $CF_4/O_2/Ar$ plasma. Observation of the surface of the anodic oxide film showed that the pore size and density of the non-treated film sample increased with the increase of the temperature. The change of the surface after exposure to fluorine plasma was greatest at $0^{\circ}C$. The generation of contamination particles by fluorine plasma exposure for the anodic oxide film prepared in the present study was different from that of previous aluminum anodic oxide films.