• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• 센서학회지
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• 제7권5호
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• pp.319-326
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• 1998

연속 기체흐름계에서 감지막으로 $Na_2CO_3$와 $MCO_3$ ($M=Cs_2,K_2,Li_2,Ca$)를 입힌 $Na^+$ 이온 전해질 센서가 $CO_2$ 가스를 감지할 때 anode반응을 도출하였다. 흔히 사용되는 전기화학 센서에 대해 일반적으로 알려진 전체 전극반응인 $MCO_3=MO+CO_2$ 반응은 위의 $Na^+$이온 전해질 센서에는 적합한 반응이 아니었다. 따라서 anode 반응은 전체cell 내의 ionic balance를 유지하기 위해 전해질과 감지막 계면에 이온교환반응을 첨가시킴으로써 도출할 수 있었으며 anode반응은 $Na_2CO_3$ 및 감지막의 금속($M^{++}$) 이온이 포함된 산화물이 참가하는 반응임을 알 수 있었다. 이와 같이 도출된 전극반응으로부터 구한 EMF와 일시 기체흐름계에서의 출력 EMF와의 차이를 아울러 검토하였다. 이러한 출력에서의 차이는 $CO_2$와 $O_2$의 분압과 분위기가스와 전극물질과의 비가역반응에 기인됨을 알았다.

• Journal of Advanced Marine Engineering and Technology
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• 제29권6호
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• pp.654-661
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• 2005

Copper is a well known alloying element that is used to improve the resistance to general corrosion of stainless steel And also Cu cation have the anti-fouling effect to inhibit adhesion of the marine algae and shellfish to the surface of heat exchanger cooling pipe or outside wall of the ship, Therefore there are some anti-fouling methods such as anti-fouling Paint mixed with copper oxide or MGPS(Marine Growth Preventing System) by using Cu cation dissolved to the sea wather solution. Cu cation can be dissolved spontaneously by galvanic current due to Potential difference between Cu and cooling pipe of heat exchanger with Ti material, which may be one of the anti-fouling designs. In this study the effect of annealing heat treatment to galvanic current and Polarization behavior was investigated with a electrochemical points of view such as measurement of corrosion Potential, anodic polarization curve. cyclic voltammetric curve, galvanic current etc The grain size of the surface in annealed at $700^{\circ}C$ was the smallest than that of other annealing temperatures. and also the corrosion Potential showed more positive potential than other annealing temperatures. The galvanic current between Ti and Cu with annealed at $700^{\circ}C$ was the largest value in the case of static condition. However its value in the case of flow condition was the smallest than the other temperatures. Therefore in order to increase anti-fouling effect by Cu cation, the optimum annealing temperature in static condition of sea water is $700^{\circ}C$, however non- heat treated specimen in the case of flow condition may be desirable.

• 한국표면공학회지
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• 제51권2호
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• pp.87-94
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• 2018

Various sealing techniques were applied to the anodized 5083 aluminum alloy for marine environment to reduce corrosion and cavitation erosion damage. Electrochemical experiments and cavitation erosion tests were conducted to evaluate the corrosion resistance and cavitation resistance of the anodic oxide film treated with sealing in natural seawater solution. Then, damaged surface morphology was analyzed by scanning electron microscope(SEM) and 3D microscope. As the results of the electrochemical experiments, it was observed that the surface damage of all the experimental conditions in the anodic polarization experiment was locally grown by the combination of crack and corrosion damage. In the Tafel analysis, the corrosion resistance of all sealing treatment conditions was improved compared to the anodizing. On the other hand, cavitation erosion tests showed that the anodizing and all the sealing treatment conditions generated local pit damage by cavitation erosion attack and grew to crater damage in the observation of damaged surface by SEM. Also, the weight loss and the surface damage depth measured with the experiment time presented that most of the sealing treatment conditions showed better cavitation erosion resistance than the anodizing, and they had an incubation period at the beginning of the experiment.

• Rapid Communication in Photoscience
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• 제3권1호
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• pp.16-19
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• 2014

Anodic self-organized titania nanotube (TNT) arrays have a great potential as efficient electron-transport materials for dye-sensitized solar cells (DSSC). Herewith we report the photovoltaic and kinetic investigations for a series of heteroleptic ruthenium complexes (RD16-RD18) sensitized on TNT films for DSSC applications. We found that the RD16 device had an enhanced short-circuit current density ($J_{SC}/mAcm^{-2}=15.0$) and an efficiency of power conversion (${\eta}=7.2%$) greater than that of a N719 device (${\eta}=7.1%$) due to the increasing light-harvesting and the broadened spectral features with thiophene-based ligands. However, the device made of RD17 (adding one more hexyl chain) showed smaller $J_{SC}(14.1mAcm^{-2})$ and poorer ${\eta}(6.8%)$ compare to those of RD16 due to smaller amount of dye-loading and less efficient electron injection for the RD17 device than for the RD16 device. For the RD18 dye (adding one more thiophene unit and one more hexyl chain), we found that the device showed even lower $J_{SC}(13.2mAcm^{-2}) $ that led to a poorest device performance (${\eta}=6.2%$) for the RD18 device. These results are against to those obtained from the same dyes sensitized on $TiO_2$ nanoparticle films and they can be rationalized according to the electron transport kinetics measured using the methods of charge extraction and transient photovoltage decays.

• 열처리공학회지
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• 제31권1호
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• pp.6-11
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• 2018

The anodic oxidation behavior of Si-containing aluminum alloy for diecasting was investigated. Especially, the property changes during anodization both on aluminum 1050 and 9 weight percentage silicon containing aluminum (Al-9Si) alloys were analyzed by the static current test. In order to fabricate a uniform anodic oxidation film by effect of Al-Si compound, nitric acid containing hydrofluoric acid had been used as a desmutter for aluminum alloy after alkaline etching. It was found that the level of voltage of Al-9Si alloy during the static current test was almost as double as higher than aluminum 1050 through anodization. By adding hydrofluoric acid in the nitric acid electrolyte, the silicon compound on the surface was removed, and the optimum amount of added hydrofluoric acid could be derived. It was also observed that the size of silicon compound formed on the surface could be refined by heat treatment at $500^{\circ}C$ and followed water quenching.

• 공업화학
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• 제17권3호
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• pp.327-330
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• 2006

Si nanodot 배열을 형성하기 위하여 $NbO_{x}$ nanopillar를 건식식각 공정의 식각마스크로써 이용하기 위한 가능성이 조사되었다. $NbO_{x}$ nanopillar는 Al과 Nb의 양극산화 공정을 이용하여 준비되었다. $NbO_{x}$ nanopillar의 식각속도와 식각프로파일은 고밀도 플라즈마를 이용한 반응성 이온 식각법에 의해서 식각가스의 농도와 coil rf power, 그리고 dc bias voltage를 각각 변화시키면서 조사 되었다. $Cl_{2}$ 가스의 농도가 증가할수록 $NbO_{x}$ nanopillar의 식각속도는 감소하였고 coil rf power와 dc bias voltage의 증가는 식각속도의 상승을 초래했다. 선택된 식각조건에서 식각시간을 변화하여 $NbO_{x}$ nanopillar의 식각특성 및 식각메커니즘이 조사되었다.

• 한국표면공학회지
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• 제51권3호
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• pp.157-163
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• 2018

The anodic $TiO_2$ layers which are prepared in various anodization conditions exhibit their specific color depending on the thickness of $TiO_2$. In this study, the relationship between the color of $TiO_2$ layer, which is grown by PEO (Plasma electrolytic oxidation), and the thickness of the $TiO_2$ layer is investigated. To evaluate the color change of the $TiO_2$ layer, the value of color ($dE^*ab$) is measured and calculated by spectrophotometer and chromameter. As a result, it is found that $dE^*ab$ values and thickness of $TiO_2$ layers form a linear relationship with meaningful formular. This formula can be helpful to quantify the thickness of the $TiO_2$ layer by the numerical $dE^*ab$ values. In this process, the spectrophotometer shows more precise results than the chromameter dose. If fluoride ions ($F^-$) are included in the electrolyte, it will affect the $dE^*ab$ values of the $TiO_2$. layer. This is against the propensity, which is analyzed by XRD (X-ray diffraction) and XPS (X-ray photoelectron spectroscopy). It is important that the formular suggested in this study provides other metals which can be also anodized with the possibility of quantifying the thickness of the $TiO_2$ layer by the $dE^*ab$ values.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.28.2-28.2
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• 2009

군사적, 산업적 용도로 널리 활용되고 있는 적외선 검출기는 InSb, HgCdTe(MCT)와 같은 물질들을 감지 소자로 사용하고 있다. 현재 가장 많이 사용되는 MCT는 적외선의 전 영역을 감지할 수 있는 장점이 있지만, 대면적 제작이 어려운 단점이 있다. 이에 비해 InSb는 안정적인 재료의 특성, 높은 전하이동도($1.2\times10^6\;cm^2/Vs$) 그리고 대면적 소자 제작의 가능성 등이 높게 평가되어 차세대 적외선 검출소자로 각광 받고 있다. InSb 적외선 수광 소자는 1970년대부터 미국을 중심으로 이온주입, MOCVD 또는 MBE와 같은 다양한 공정을 이용하여 제작되어 왔으며, 앞으로도 군수용 제품을 비롯하여 산업전반에서 더욱 각광을 받을 것으로 예상된다. 하지만 InSb는 77 K에서 0.225 eV의 상대적으로 작은 밴드갭을 갖고 있기 때문에 누설전류로 인한 성능저하가 고질적인 문제로 대두되었고, 이를 해결하기 위한 고품질 절연막 연구가 InSb 적외선 수광 소자 연구의 주요 이슈 중 하나가 되어왔다. PECVD, photo-CVD, anodic oxidation 등의 공정을 이용하여 $SiO_2$, $Si_3N_4$, 양극산화막(anodic oxide) 등 다양한 물질들에 대한 연구가 진행되었고[1,2], 산화막과 반도체 계면에서의 열확산을 억제하여 계면트랩밀도를 최소화하기 위한 연구도 활발히 이루어졌다[3]. 하지만 InSb 소자의 성능개선을 위한 최적화된 산화막에 대한 연구는 여전히 불충분한 실정이다. 본 연구에서는 n형 (100) InSb 기판 (n = 0.2 ~ $0.85\times10^{15}cm^{-3}$ @ 77 K)을 이용하여 양극산화막, $SiO_2$, $Si_3N_4$ 등을 증착하고 절연막으로서 이들의 특성을 비교 분석하였다. 양극산화막은 상온에서 1 N KOH 용액을 이용하여 양극산화법으로 증착하였으며, $SiO_2$, $Si_3N_4$는 PECVD로 $150^{\circ}C$에서 $300^{\circ}C$까지 온도를 변화시켜가며 증착하였다. SEM분석과 XPS분석으로 두께의 균일도와 절연막의 조성, 계면확산 정도를 확인하였으며, I-V와 C-V 커브측정을 통해 각 절연막의 전기적 특성을 평가하였다. 이 분석들을 통해 각각의 공정 조건에 따른 절연막의 상태를 전기적 특성과 관련지어 설명할 수 있었다.

• Corrosion Science and Technology
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• 제19권2호
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• pp.82-88
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• 2020

This work examined the corrosion protection performance of benzoate loaded hydrotalcite/graphene oxide (HT/GO-BZ) for carbon steel. HT/GO-BZ was fabricated by the co-precipitation method and characterized by infrared spectroscopy, X-ray diffraction, and scanning electronic microscopy. The corrosion inhibition action of HT/GO-BZ on carbon steel in 0.1 M NaCl solution was evaluated by electrochemical measurements. The benzoate content in HT/GO-BZ was determined by UV-Vis spectroscopy. Subsequently, the effect of HT/GO-BZ on the corrosion resistance of the water-based epoxy coating was investigated by the salt spray test. The obtained results demonstrated the intercalation of benzoate and GO in the hydrotalcite structure. The benzoate content in HT/GO-BZ was about 16%. The polarization curves of the carbon steel electrode revealed anodic corrosion inhibition activity of HT/GO-BZ and the inhibition efficiency was about 95.2% at a concentration of 3g/L. The GO present in HT/GO-BZ enhanced the inhibition effect of HT-BZ. The presence of HT/GO-BZ improved the corrosion resistance of the waterborne epoxy coating.