• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.444-445
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• 2007

IZO/Al multilayer anode films for flexible top emitting organic light emitting diodes (TOLEDs) were grown on PEN (polyethylen-enaphthelate) substrate using twin target sputter (TTS) system. To investigate electrical and optical properties of IZO/Al multilayer films, 4-point probe method and UV/Vis spectrometer were used, respectively. From a IZO/Al multilayer films with 100nm-thick Al, sheet resistance of $1.4{\Omega}/{\square}$ and reflectance of above 62% at a range of 500~550nm wavelength could be obtained, In addition, structural and surface properties of IZO/Al multilayer films were analyzed by XRD (X-ray diffraction) and FESEM (field emission scanning electron microscopy) and AES (auger electron spectroscope), respectively. Moreover, flexibility of IZO/Al multilayer anode films were examined by bending test method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.491-492
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• 2006

We report on the fabrication of organic-based flexible display using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a Ar/$O_2$ ambient. X-ray diffraction examination results show that the IZO anode film grown at room temperature is complete amorphous structure due to low substrate temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Progress in Superconductivity and Cryogenics
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• v.14 no.1
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• pp.1-3
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• 2012

LMO($LaMnO_3$) buffer layer of superconducting coated conductor was deposited on IBAD-MgO template in the plasma atmosphere at $650^{\circ}C$ which is relatively low compared with conventional deposition temperature of more than $800^{\circ}C$. Deposition method of LMO was DC sputtering, and target and deposition chamber were connected to the cathode and anode respectively. When DC voltage was applied between target and chamber, plasma was formed on the surface of target. The tape substrate was located with the distance of 10 cm between target and tape substrate. When anode bias was connected to the tape substrate, electrons were attracted from plasma in target surface to the tape substrate, and only tape substrate was heated by electron bombardment without heating any other zone. The effect of electron bombardment on the surface of substrate was investigated by increasing bias voltage to the substrate. We found out that the sample of electron bombardment had the effect of surface heating and had good texturing at low controlling temperature.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.52-57
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• 2015

The focal spot of electron beam depending on the anode angle in the structure and major parts of the X-ray tube was investigated by the OPERA-3D/SCALAR simulation program. The simulation worked on four spaces with with two spaces, including anode and cathode of X-ray tube, by applying the finite element method analysis. The analytical model and dimension for the emission orbit of thermal electrons made from one filament of the focused X-ray cathode is affected to the penumbra of detector for the X-ray depending on any real focal spot size. The model shape of focusing cap and focusing tube with an anode target angle and a cathode filament is analyzed by the current density distribution of thermal electrons. The focusing width of thermal electrons for the X-ray tube depended on the anode angle (${\theta}$). The focusing value of electron beams at a region of anode angle having $10^{\circ}{\sim}17^{\circ}$ maintained to below value of $70{\mu}m$. The minimum focal size of the electron beam was $40{\mu}m$ at an anode angle of $15^{\circ}$. The focused X-ray tube of many variables depended on the thermionic emission of hot electrons from the target trajectory. The focusing tube will contribute to the real design of X-ray for the development of future diagnosis medical device.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.314-314
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.571-574
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• 2000

In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.54-58
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• 1999

We deposited diamond-like carbon (DLC) films using ion beam sputtering of a graphite target on flat substrates for use as a thin film field emitter. An n-type silicon wafer, titanium-coated silicon, and indium tin oxide (ITO) coated glass were used as a substrate. All films exhibited a sudden increase in the emission after a breakdown occurred at high voltage. The morphology of the films after the breakdown depended on the substrate. On ITO and Ti substrates, the DLC film peeled off upon breakdown, but on the Si substrate the surface melting due to breakdown resulted in the formation of various structures such as a sharp point, mound, and crater. By scanning the deformed surface with a tip anode, we found that the emission was concentrated at the deformed sites, indicating that the field enhancement due to the morphology change was responsible for the increased emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.442-443
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium zinc oxide (IZO) films grown on $SiO_2$/PES/$SiO_2$ substrate by a RF sputtering in pure Ar ambient at room temperature were investigated. A sheet resistance of $13.5\;{\Omega}{\square}$, average transmittance above 85 % in 550 nm, and root mean square roughness of $10.5\;{\AA}$ were obtained even in the IZO layers grown at room temperature in pure Ar ambient. Without addition of oxygen gas during IZO sputtering process, we can obtain high quality IZO anode films from the specially synthesized oxygen rich IZO target. XRD result shows that the IZO films grown at room temperature is completely amorphous structure due to low substrate temperature. In addition, the electrical and optical properties of the flexible OLED fabricated on IZO/$SiO_2$/PES/$SiO_2$ is critically influenced by the electrical properties of a IZO anode. This findings indicate that the IZO/$SiO_2$/PES/$SiO_2$ is a promising anode/substrate scheme for realizing organic based flexible displays.

• Design & Manufacturing
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• v.16 no.2
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• pp.33-38
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• 2022

Currently, Korea is an aging society, and it is expected to enter a super-aging society in about 4 years. Accordingly, many X-ray technologies are being developed. In X-rays, 99% of X-rays are converted into heat energy and 1% into light energy (X-rays). 99% of the thermal energy raises the temperature of the anode and its surroundings, and the cooling system is an important factor as overheating can affect the deterioration of X-ray quality and shortened lifespan. There is a method of forced air cooling using natural convection. Therefore, in this study, when X-rays were taken 5 times, Flow analysis was performed on heat removal according to temperature rise and cooling time for the heat generated at the anode of the X-ray tube (input power 60kW, 75kW, 90kW). Based on one-shot, the most rapid temperature rise section increased by more than 57% to 0.03 seconds, A constant temperature rises from 0.03 seconds to 0.1 seconds, It is judged that the temperature rises by about 8.2% or more at one time. After one-shot cooling, the cooling drops sharply from about 60% to 0.03 seconds, It is judged that the temperature has cooled by more than 86% compared to the temperature before shooting. One-shot is cooled by more than 86% with cooling time after 0.1 seconds, As the input power of the anode increases, the cooling temperature gradually increases. Since the tungsten of the anode target inside the X-ray tube may be damaged by thermal shock caused by a rapid temperature rise, an improvement method for removing thermal energy is required when using a high-input power supply.