• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.554-559
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• 2011

To improve the safety and electrode characteristics of lithium metal anode, physically coated electrodes on lithium metal surface by three kinds of carbon are prepared and their charge-discharge performances are investigated by adopting the C-Li electrodes as the anode of rechargeable lithium batteries. The lithium anode coated by the carbon powder with smaller particle size and higher surface area, which has higher packing density and lower surface roughness, shows better performance in charge-discharge characteristics. The carbon coating on lithium surface can be more effective in small-sized cells.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.36-41
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• 2000

$SnO-2$ thin films for thin film secondary battery anode were deposited n glass substrate with stain-less steel collector and charge/discharge experiments were conducted to investigate feasibility of $SnO-2$ thin film as a new anode material. The as-deposited films were pure $SnO-2$ phase which is not related to deposition condition. The grain size on the surface of as-deposited films increased with increase of oxygen partial pressure. However, the grain size did not show any change above oxygen partial pressure of 80:20. The surface roughness of the as-deposited films increased after decreasing because of resputtering effect of oxygen negative ion in plasma. All films showed typical $SnO-2$ anode characteristics which has a side effect at the first cycle, which is not related to the deposition condition. The charge/discharge experiments of 200cycles indicated that capacity of $SnO-2$ films depended on oxygen contents and surface roughness. The cycle characteristics was determined by initial charge/discharge reaction. The $SnO-2$ film with low initial capacity showed more stable cycle characteristics than film with high initial capacity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1034-1040
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• 2004

The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Journal of Advanced Marine Engineering and Technology
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• v.9 no.3
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• pp.240-249
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• 1985

This paper presents the results of the galvanic anode's characteristicsin the Al-Zn-In-Mg and Al-Zn-In-Mg system anodes used aluminium ingot of low purity, 99.5% grade. The results of thses performance tests are as follows: 1) Zn, In and Mg are an available elements to improve the performance of Aluminium alloy anodes. 2) When the range of zinc content in the Al-Zn-In-Mg system anode is 2-5% the more zinc content, the more improve the anode performance. 3) Al-Zn-In-Mg system anode requires a long term over 50 days for the performance test. 4) The composition of Al-Zn-In-Mg system anode which shows the most excellent performance is Al-(2-3%) Zn-(0.02%) In-(1.0%) Mg. 5) When the Al-Zn-In-Mg system anode is annealed for an hour in 500 to 550 .deg. C, the anode performance is improved. 6) The lower average potential and the better corrosion pattern in the Al-Zn-Mg, Al-Zn-In and Al-Zn-In-Mg system anodes, the more current efficiency is improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1134-1139
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• 2006

Electrical, optical, and structural properties of indium zinc oxide (IZO) anode films grown by a RF magnetron sputtering were investigated as functions of RF power and working pressure in pure Ar ambient. To investigate electrical, optical and structural properties of IZO anode films, 4-point probe and UV/VIS spectrometry, and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $15.2{\Omega}/{\square}$, average transmittance above 80 % in visible range, expecially above 85 % in 550 nm, and root mean square roughness of 1.13 nm were obtained from optimized IZO anode films grown in oxygen free ambient. All samples show amorphous structure regardless of RF power and working pressure due to low substrate temperature. In addition, XPS depth profile obtained from IZO/PES exhibits that there is no obvious evidence of interfacial reaction between IZO and PES substrate. Furthermore, current-voltage-luminance of the flexible phosphorescent flexible OLEDs fabricated on IZO anode shows dependence on sheet resistance of the IZO anode. These results indicate that the IZO anode is a promising candidate to substitute conventional ITO anode for high-quality flexible displays.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.127-130
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• 2009

The uniform gas distribution between anode channels of the indirect internal reforming type molten carbonate fuel cell (MCFC) is crucial design parameter because of the electric performance and the durability problems. A three-dimensional computational fluid dynamics (CFD) analysis is performed to investigate flow characteristics in the anode channels and manifold under different pressure drop and channel temperature conditions. The combined meshes consists of hexadral meshes in the channels and polyhedral meshes in the manifold are adopted and chemical reactions inside the MCFC system are not included because of computational difficulties associated with the size and geometric complexity of the system. Results indicate that the uniformity in flow-rate is in the range of $\pm$ 0.048 % between the anode channels when the pressure drop of anode channel is about 150 Pa. A gas flow-rate uniformity decreases as the pressure drop of anode channels decreases and as the temperature difference between indirect internal reforming (IIR) channels and anode channels increases.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.215-222
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• 2006

The passivity behavior of copper anode containing impurities in copper sulfate solution for electrorefining process was studied at several different levels of impurities such as As, Sb, Bi and Pb. The passivity behavior was investigated by electrochemical techniques (galvanostatic, potentiodynamic and cyclic voltammetry tests) and surface analysis (optical microscopy, electron probe microanalysis, scanning electron microscopy). The results were that arsenic, antimony inhibited passivation and bismuth accelerated it and lead containing anode showed different passivity behavior from above anodes. The improved passivity characteristics could be explained by decrease in oxygen content in passivity film which resulted from a reaction among the impurities, oxygen and copper in the anode. The SEM image revealed that arsenic or antimony containing anode exhibited a porous passivity film and bismuth containing anode showed the compact passivity film and lead containing anode had loose passivity film on anode.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.