• Title/Summary/Keyword: Anneealing temperature

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Effect of Pressurless Annealing Temperature on the Properties of α-SiC-WC Electroconductive Ceramic Composites. (α-SiC-WC 電導性 세라믹 複合體의 特性에 미치는 無加壓 Annealing 溫度)

  • Sin, Yong Deok;Ju, Jin Yeong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.5
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    • pp.242-242
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    • 2004

  • The composites were fabricated 61 vol.%α-α-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% Al₂O₃＋Y₂O₃ by pressureless annealing at 1700, 1800, 1900℃ for 4 hours. The result of phase analysis of composites by XRD revealed α-SiC(2H), WC, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the flexural strength, fracture toughness and Young′s modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍ$m^{\frac{1}{2}}$, and 106.43㎬ for composite by pressureless annealing temperature 1900℃ at room temperature. The electrical resistivity showed the lowest value of 1.47×$10^{-3}$/Ω·㎝ for composite by pressureless annealing temperature 1900℃ at 25℃. The electrical resistivity of the α-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from 25℃ to 500℃.

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Effect of Pressurless Annealing Temperature on the Properties of $\alpha$-SiC-WC Electroconductive Ceramic Composites. ($\alpha$-SiC-WC 전도성 세라믹 복합체의 특성에 미치는 무가압 Annealing 온도)

  • 신용덕;오상수;주진영
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.53 no.5
    • /
    • pp.241-247
    • /
    • 2004

  • The composites were fabricated 61 vol.%$\alpha$-$\alpha$-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 1700, 1800, 190$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(2H), WC, and YAG(Al$_{5}$ Y$_3$O$_{12}$ ) crystal phase. The relative density, the flexural strength, fracture toughness and Young's modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍm$\frac{1}{2}$, and 106.43㎬ for composite by pressureless annealing temperature 190$0^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 1.47${\times}$10$^{-3}$ $\Omega$$.$cm for composite by pressureless annealing temperature 190$0^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the $\alpha$-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$.

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