• 한국분말재료학회지
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• 제16권1호
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• pp.9-15
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• 2009

Amorphization and crystallization behaviors of $Ti_{50}Cu_{50}Ni_{20}Al_{10}$ powders during high-energy ball milling and subsequent heat treatment were studied. Full amorphization obtained after milling for 30 h was confirmed by X-ray diffraction and transmission electron microscope. The morphology of powders prepared using different milling times was observed by field-emission scanning electron microscope. The powders developed a fine, layered, homogeneous structure with prolonged milling. The crystallization behavior showed that the glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 691,771 and 80 K, respectively. The isothermal transformation kinetics was analyzed by the John-Mehn-Avrami equation. The Avrami exponent was close to 2.5, which corresponds to the transformation process with a diffusion-controlled type at nearly constant nucleation rate. The activation energy of crystallization for the alloy in the isothermal annealing process calculated using an Arrhenius plot was 345 kJ/mol.

• 한국위성정보통신학회논문지
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• 제10권2호
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• pp.90-94
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• 2015

본 연구에서는 Solution Process를 적용한 Strontium Oxide를 배향막으로 사용한 경우의 액정배향 특성에 대해서 연구하였다. Stronium Oxide 는 High K 물질로 배향막으로 사용할 경우 임계치 전압을 효율적으로 조절할 수 있는 장점이 있으나, 액정분자와의 배향에 관한 상호관계에 대해서는 많은 연구가 진행되지 않았었다. 0.1~0.4 Mol 롤 농도를 조절한 Strontium Oxide를 Solution Process 로 배향막으로서 제조함으로써, 보다 생산성이 좋은 방법을 제시할 수 있었으며, 재료가 갖는 우수한 특성을 반영한 액정디스플레이의 제조가 가능하였다. 샘플 측정결과 1.447~1.613V 의 임계치 전압특성을 보여주어 기존의 방법으로 제조된 액정디스플레 이와 동등 혹은 우월한 특성을 갖고 있음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.478-480
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• 2001

Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

• 한국결정성장학회지
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• 제12권4호
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• pp.210-214
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• 2002

$450^{\circ}C$ 이하에서 Cu를 이용한 전계 유도 방향성 결정화 공정을 통해 비정질 실리콘의 결정화 거동을 고찰하였다. 열처리와 동시에 전계를 인가하여 Cu가 증착된 패턴의 외부에서 Cu가 존재하지 않는 비정질 실리콘의 영역으로 측면 결정화를 유도하였다. 특히, Cu가 존재하지 않는 영역의 측면결정화는 (-) 전극 쪽에서 (+) 전극 쪽으로 방향성을 가지고 결정화가 진행되었다. 이러한 현상은 Cu와 Si가 반응 할 때, 주확산 종이 금속(Cu)이기 때문에 가능하다고 판단되었다. 또한, FALC 공정을 이용한 $350^{\circ}C$의 온도에서 결정화된 영역 내에 커다란 dendrites 형태의 가지가 형성되었고 전계 방향에 따른 측면 결정화가 진행되었음을 확인하였다. 결론적으로 $350^{\circ}C$의 매우 낮은 온도에서 30 V/cm의 전계 인가를 통해 12$\mu$m/h의 결정화 속도로 결정화가 가능함을 확인하였다.

• Journal of Magnetics
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• 제17권2호
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• pp.86-95
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• 2012

This study investigated the effects of adding a third alloying element, Ni, to create $Fe_{70-x}Pd_{30}Ni_x$ (x = 2, 4, 6, 8 at.% Ni) ferromagnetic shape memory alloys (FSMAs). The Ni replaced a portion of the Fe. The $Fe_{70-x}Pd_{30}Ni_x$ alloys were homogenized through hot and cold forging to gain a ~38% reduction in thickness, next they were solution-treated (ST) with annealing recrystallization at $1100^{\circ}C$ for 8 h and quenched in ice brine, and then aged at $500^{\circ}C$ for 100 h. Investigation of the microstructures and magnetostriction indicated that the greater Ni amount in the $Fe_{70-x}Pd_{30}Ni_x$ alloys reduced saturation magnetostriction at room temperature (RT). It was also observed that it was more difficult to generate annealed recrystallization. However, with greater Ni addition into the $Fe_{70-x}Pd_{30}Ni_x$ (x = 6, 8 at.% Ni) alloys, the $L1_0+L1_m$ twin phase decomposition into stoichiometric $L1_0+L1_m+{\alpha}_{bct}$ structures was suppressed after the $500^{\circ}C$/100 h aging treatment. The result was that the $Fe_{70-x}Pd_{30}Ni_x$ (x = 6, 8 at.% Ni) alloys maintained a high magnetostriction and magnetostrictive susceptibility (${\Delta}{\lambda}{_\parallel}{^s}/{\Delta}H$) after the alloys were aged at $500^{\circ}C$ for 100 h. This magnetic property of the $Fe_{70-x}Pd_{30}Ni_x$ (x = 6, 8 at.% Ni) alloys make it suitable for application in a high temperature (T > $500^{\circ}C$) and high frequency environments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.141-142
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.9514eV - ($7.24\times10^{-4}$ eV/K)$T^2$/(T + 489 K). After the as-grown $ZnIn_2S_4$ single crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, $V_s$, $Zn_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.98-99
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• 2008

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) 1.9501 eV - ($8.79\times10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag}$, $V_{Se}$, $Ag_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.220-221
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• 2003

Equiatomic FePt and CoPt alloy thin films have received considerable attention as possible magnetic and magneto-optic recording because of their high magnetic anisotropy energy and high coercivity. The high coercivity in these thin films is due to the presence of finely dispersed ordered FePt phase mixed with disordered FePt phase. However, a high temperature treatment, either substrate heating during deposition or post annealing, is needed to obtain the ordered L1$\_$0/ phase with high value of magneto crystalline anisotropy. Recent microstructural studies on these films suggest that the average grain size ranges from 10-50 nm and the grains are magnetically coupled between each other. On the other hand, the ultrahigh-density magnetic recording media with low media noise imposes the need of a material, which consists of magnetically isolated grains with size below 10 nm. The magnetic grain isolation can be controlled by the amount of additional non-magnetic element in the system which determines the interparticle separation and therefore the interparticle interactions. Recently, much research work has been done on various non-magnetic matrices. Preliminary studies showed that the samples prepared in B$_2$O$_3$ and Carbon matrices have shown strong perpendicular anisotropy and fine grain size down to 4nm, which suggest these nanocomposite films are very promising and may lead to the realization of a magnetic medium capable of recording densities beyond 1 Tb/in$^2$. So, in this work, the effect of Carbon doping on the magnetic properties of FePt nanoparticles were investigated.

• 한국세라믹학회지
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• 제35권2호
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• pp.137-144
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• 1998

고온초전도체 61심 Bi-2223 선재간의 초전도 접합부위를 화학적 부식 및 열적· 기계적 반복 공정에 의하여 제조하였다. 초전도 선재 테이프의 은 피복재 한쪽 표면을 초전도체와 반응하지 않는 부식액(NH4OH:H2O2=1:1)으로 화학적으로 제거한 다음, 두 시편을 일출가압 성형하여 접합시편을 제조하였고 일련의 서로 다른 열적· 기계적 처리를 거쳐 접합부의 물성 및 미세구조를 분석하였다. 접합부를 따라 임계전류(Ic) 변화와 전류전압 곡선의 특성을 측정하기 위하여 여러 단자를 접합부 주위에 설치하여 부위별 I~V 특성을 측정한 결과 단심선재에 비하여 다심선재에서 선재 전체의 통전 능력을 좌우하는 천이구간의 임계전류값이 높았다. 그러나 단심에 비해 다심선재는 천이급속도를 나타내는 n값이 다심선재내 각각의 초전도 core들의 상호작용에 의하여 낮은 값을 나타내었다. 접합부의 임계전류 통전성은 반복적인 가압성형 공정과 서냉반응 열처리 공정에 의하여 향상되었다.

• 한국안광학회지
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• 제13권3호
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• pp.73-77
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• 2008

목적: 본 논문은 저온열처리로 비결정 또는 결정 ZnO 박막의 UV emission 가능하다는 것이다. 방법: 화학적 용액법을 이용하여 소다-라임-실리카 유리 위에 100, 150, 200, 250 및 $300^{\circ}C$로 열처리하여 비정질 및 나노 결정질 ZnO 박막을 제조하였으며, 박막의 성장 특성 및 광학적 특성을 X-선 회절 분석법, 자외선-가시광선-근적외선 분광법 및 발광분석법을 통하여 분석하였다. 결과: $100^{\circ}C{\sim}200^{\circ}C$에서 60분간 열처리된 박막은 비정질 특성을 나타내고 있었으며, $250^{\circ}C$ 및 $300^{\circ}C$로 열처리된 박막에서는 ZnO 결정상이 나타났다. 비정질 ZnO 박막의 PL분석에 의하면 매우 강한 Near-band-edge emission이 나타났으며, Green emission은 거의 검출되지 않았다. 결론: 앞으로는 저온에서 ZnO 광전자소자를 쉽게 제조할 수 있을 것이다.