Point defect for $AgGaSe_2$ epilayers grown by hot wall epitaxy
(Hot Wall Epitaxy (HWE)법에 의해 성장된 $AgGaSe_2$ 에피레이어의 점결함 연구)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2008.11a
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- pp.98-99
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- 2008