• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.14-17
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• 2002

The effects of substrate temperatures and annealing temperatures on the microstructures and ferroelectric properties of PbZ $r_{0.52}$ $Ti_{0.48}$ $O_3$(PZT) thin fims prepared by pulsed laser deposition (PLD) were investigated. For this purpose, the PZT films were deposited at various substrate temperatures (400~$600^{\circ}C$) with post annealing process in oxygen atmosphere. The single perovskite phase was formed at the deposition temperature of 500 to 55$0^{\circ}C$ without post annealing and the PZT films deposited below 50$0^{\circ}C$ formed the single phase with post annealing at $650^{\circ}C$. The grain size of the films increased and the grain boundary of the films was clearly defined as the substrate temperature increased from 400 to 55$0^{\circ}C$. The remnant polarization (Pr) and the coercive field (Ec) of the films deposited at 55$0^{\circ}C$ and annealed at $650^{\circ}C$ were 34.3 $\mu$C/c $m^2$and 60.2 kV/cm, respectively.y.y.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• Progress in Superconductivity
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• v.4 no.2
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• pp.176-179
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• 2003

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process. Before rolling process, round wires were pre -annealed at 760 - 820 $^{\circ}C$ and low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases. However Bi-2223 phases also were formed at higher than 76$0^{\circ}C$ of pre-annealing temperature. The engineering critical current densities (Je) of Bi-22231Ag tapes were sintered at low oxygen partial pressure were higher than t hat of the wires sintered at air. We could achieve 6500 A/${cm}^2$ of Je for the tape that was initially kept at slightly higher temperature than that of normal heat treatment.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.29-34
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• 1992

Phase transition, dielectric properties, and leakage current characteristics of Ta2O5 thin film fabricated by sol-gel process with tantalum penta-n-butoxide were studied as a function of annealing temperature in O2 atmoshpere. Although Ta2O5 thin film annealed at temperatures below 700$^{\circ}C$ for 1 hr was amorphous, it was crystallized to ${\beta}$-Ta2O5 of orthorhombic phase by annealing at temperatures higher than 750$^{\circ}C$. With increasing annealing temperature from 500$^{\circ}C$ to 900$^{\circ}C$, dielectric constant of sol-gel processed Ta2O5 thin film was changed from 17.6 to 15.3 due to the increase of SiO2 thickness at Ta2O5/Si interface. For Ta2O5 thin film annealed at 500$^{\circ}C$ to 800$^{\circ}C$ for 1 hr in O2 atmosphere, leakage current was remarkably reduced and breakdown strength was increased with higher annealing temperature. For Ta2O5 film annealed at 800$^{\circ}C$, breakdown did not occur even at electric field strength of 30${\times}$105V/cm and leakage current was maintained lower than 10-8A/$\textrm{cm}^2$.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.299-306
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• 1996

We invesgated the fesibility of thin films deposition by pyrolysis of metalorganic precursors using chemical beam deposition (CBD) process. We attempted to understand the effects of deposition variables such as substrate temperature operating pressure effusion cell temperature and H2 partial pressure on the properties of MgF2 grown by CBD. Mg(tfac)2 was used as a precursor. MgF2 thin films were always grown in an amorphous state and crystallized bypost-annealing. he higher the substrate temperature and the lower the operating pressure the less the impurities I the deposited MgF2 thin films. H2 gas has to be supplied for the pyrolitic reaction of Mg(tfac)2 decomposition. MgF2 films annealed in H2 have lower C impurity than those annealed in O2. But their crysatllinity was independent of annealing atmosphere. The optimum conditions for the prepara-tion of MgF2 films by CBD process were as following : The substrate temperature 55$0^{\circ}C$ the operating pressure 10-4 torr; effusion cell temperature 21$0^{\circ}C$ the percentage of H2 100% Post-annealing in H2 gas was required to remove residual carbon and to form MgF2 crystalline phase.

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.319-322
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• 1995

As a trend toward multi-product batch processes is increasing in Chemical Process Industry (CPI), multi-product batch scheduling has been actively studied. But the optimal production scheduling problems for multi-product batch processes are known as NP-complete. Recently Ku and Karimi [5] have studied Simulated Annealing(SA) and Jung et al.[6] have developed Modified Simulated Annealing (MSA) method which was composed of two stage search algorithms for scheduling of batch processes with UIS and NIS. Jung et al.[9] also have studied the Common Intermediate Storage(CIS) policy which have accepted as a high efficient intermediate storage policy. It can be also applied to pipeless mobile intermediate storage pacilities. In spite of these above researches, there have been no contribution of scheduling of CIS policy for chemical batch processes. In this paper, we have developed another MSA for scheduling chemical batch processes with searching the suitable control parameters for CIS policy and have tested the this algorithm with randomly generated various scheduling problems. From these tests, MSA is outperformed to general SA for CIS batch process system.

• Journal of Powder Materials
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• v.22 no.4
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• pp.278-282
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• 2015

The GaN-powder scrap generated in the manufacturing process of LED contains significant amounts of gallium. This waste can be an important resource for gallium through recycling of scraps. In the present study, the influence of annealing temperatures on the structural properties of GaN powder was investigated when the waste was recycled through the mechanochemical oxidation process. The annealing temperature varied from $200^{\circ}C$ to $1100^{\circ}C$ and the changes in crystal structure and microstructure were studied. The annealed powder was characterized using various analytical tools such as TGA, XRD, SEM, and XRF. The results indicate that GaN structure was fully changed to $Ga_2O_3$ structure when annealed above $900^{\circ}C$ for 2 h. And, as the annealing temperature increased, crystallinity and particle size were enhanced. The increase in particle size of gallium oxide was possibly promoted by powder-sintering which merged particles to larger than 50 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1511-1514
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• 2009

Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1473-1476
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• 2013

Solution-based deposition of $CuIn_xGa_{1-x}Se_2$ (CIGSe) thin films is well known non-vacuum process for the fabrication of CIGSe solar cells. However, due to the usage of organic chemicals in the preparation of CIG precursor solutions, the crystallization of the polycrystalline CIGSe and the performance of CIGSe thin film solar cells were significantly affected by the carbon residues from the organic chemicals. In this work, we have tried to eliminate the carbon residues in the CIG precursor thin films efficiently by using soft-annealing process. By adjusting soft-annealing temperature, it is possible to control the amount of carbon residues in CIG precursor thin films. The reduction of the carbon residues in CIG precursors by high temperature soft-annealing improves the grain size and morphology of polycrystalline CIGSe thin films, which are also closely related with the electrical properties of CIGSe thin film solar cells.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.616-619
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• 1996

This paper presents the configuration methodology of Distributed Control System(DCS)s for process plant and their performance evaluation. Performance evaluation is specified both in terms of operational and installation aspects of system. In order to evaluate performance criteria of operational aspect, a simulation method is proposed. Modeling of system components including process computer, database, process controllers and LANs, etc, is implemented for simulation. Based on these characteristics, different system configurations are evaluated and compared through results about evaluation criteria in order to select the best DCS for particular process. The results, in abbreviated form, of the performance evaluation of DCS controlling a CAL(Continuous Annealing Line) plant of iron process are presented.