• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.239-243
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• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.871-873
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• 2009

We report on the growth of rubrene ($C_{42}H_{28}$) wire fabricated by thermal evaporation, followed by solvent-vapor annealing for the application of organic thin film transistor. Solvent-vapor annealing was carried out in precisely controlled vapor pressure at elevated temperature. Micro-sized, and elongated rubrene wire was obtained via solvent annealing process reproducibly. Optical image and XRD data shows highly crystalline quality of rubrene wire.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1483-1484
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• 2000

Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)$O_3$ films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.107-108
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• 2007

In order to investigate the electrical properties of Hf-silicate as a function of annealing temperature, Hf-silicate deposited by atomic layer deposition (ALD) was studied. After Hf-silicate film deposition, annealing was proceeded at $500^{\circ}C\;and\;700^{\circ}C$. The hysteresis of C-V curves and trapping charge densities were decreased after annealing process. As annealing temperature became higher from $500^{\circ}C\;to\;700^{\circ}C$, the capacitance equivalent thickness (CET) was increased from 1.66 nm to 1.76 nm and the leakage current at -1 V was decreased from $1.70{\times}10^{-4}\;to\;5.68{\times}10^{-5}\;A/cm^2$.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.7
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• pp.69-77
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• 1998

Development on the mechanical properties of steel sheet for the automobile body panel is very important in the BAF(Batch annealing furnace) annealing process. Because of the heat treatment method in the BAF, mechanical properties were decided on the heat treatment method of the coil. So, we tested on the development of mechanical properties according to heat treatment method at the annealing furnace using the In atmospheric gas($H_2$ : 75%, $N_2$ : 25%) and the HNx atmospheric gas($H_2$ : 5%, $N_2$ : 95%) We confirmed the following characteristics, mechanical properties were changed under the influence of the annealing cycle and the atmospheric gas. And, we have some result according to heat treatment method. Elongation of the mechanical properties in the HNx BAF is higher than the Ax BAF. But tensile strength and hardness is higher than the HNx BAF.

• Korean Journal of Metals and Materials
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• v.49 no.10
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• pp.790-796
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• 2011

To reduce the heat released during intermetallic reaction, Ni-50at%Al powder compact has been previously annealed at several conditions before the reaction. The effects of the pre-annealing conditions on the reaction synthesis process have been investigated. Experimental results show that the heat released during the reaction synthesis decreased proportionally with increase of the pre-annealing temperature and duration time. The reaction duration period was significantly increased when the intermetallics were formed in the powder compact during the pre-annealing. This was attributed to the fact that the reaction occurred by solid-state diffusion between the un-reacted elemental atoms and that the $NiAl_3$ phase formed predominantly during pre-annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.55-59
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• 1993

In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.

• Journal of Information Display
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• v.4 no.4
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• pp.1-3
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• 2003

For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing to the final microstructure and the performance of low-temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a-Si) films and process conditions are yet to be optimized.