• Journal of Magnetics
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• v.3 no.4
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• pp.123-126
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• 1998

The magneto-impedance (MI) has been measured in the annealed Co66Fe4Ni1B14Si15 amorphous ribbon for the evaluation of anisotropy field. MI at the frequency of 10 MHz is related to the transverse permeability from rotational magnetization depending on the local anisotropy field. MI varies sensitively with the annealing temperature, reflecting the change of anisotropy field distribution. The local anisotropy fields evaluated from MI Profiles are discussed in terms of the magnetic softness and microstructural change by the annealing.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.46.1-46.1
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• 2010

Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of $200-250^{\circ}C$. Best surface passivation has been obtained by post-deposition annealing of a-Si:H film layer. Post annealing around the deposition temperature was sufficient to improve the surface passivation for silicon substrates. We obtained effective carrier lifetimes above 5.5 ms on average.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.91-98
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• 1992

In a $Co_{67}Fe_{4.5}Nb_{2}Si_{10}B_{15}$ amorphous alloy ribbon the effect to two-step annealing on the soft magnetic properties has been studied. By two-step annealing method which the second annealing at low temperature of $310^{\circ}C$ for 2 hours is undertaken after the primary annealing at high temperature above $480^{\circ}C$ for 20 minutes at the vacuum state, the coercive force and the squareness are not changed nearly but the initial permeability at d.c. and the effective permeability at a.c. are remark-ably increased compared with the one-step annealing. The maxima of the initial permeability and the effective permeability at 1 kHz after the two-step annealing are 290,000 and 41,000, respectively, which are 30% higher than those of the one-step annealing. The change of magnetic properties with annealing temperature is discussed in terms of the residual stress, the domain size, the cluster and the crystalline phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.149-151
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• 1994

This thesis describes the effect of heat treatment on the magnetic properties of Co-bsaed Amorphous. A sample was chosen as basic composition with Co$\_$82//Si$\_$2//B$\_$16/ of zero magnetostriction. It was made by single roll method with quartz orifice 0.5[mmø], Ar gas pressure 0.6 [kg/cm$^2$] and roll speed 28 (m/sec) and atmosphere is ,Ar gas. We obtained the sample of width 2.4(mm), thickness 45[$\mu\textrm{m}$]. Made sample annealed for the improvement of magnetic propertics at at annealing temperature 325,350,375 and 400$^{\circ}C$ and annealing time 15, 30, 45, 60 and 120min respectiveily. Amorphous ribbon of co-based showed high permeab- ility ${\mu}$=8000∼14000, and became improvement of magnetic properties according to anneal ins temperature and time. Especially. Amorphous sample at 325$^{\circ}C$ ,45min appearanced high permeability ${\mu}$=13, 589 at frequency f= 100Hz. and loss factor was reduced at low frequency with rising anneal ins ti me and temperature more annealed sample than basic sample.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1666-1669
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• 1996

To produce low loss amorphous molding cores which are used as choke cores in high efficiency electronic ballast for Metal Halide Lamp, the magnetic properties of amorphous molding cores were investigated with the various fabrication methods. The results are as follows : (1) The total weight of molding core gradually increased as molding time increases. (2) The magnetic properties($B_{10}$, $B_r$, $B_t/B_s$, $H_c$, $W_c$) of molding core drastically deteriorated. This is presumably due to the compressive stress imposed on amorphous core occurred during epoxy curing treatment. (3) Two step annealing process(curing+field annealing) was more or less effective to recover the damaged properties.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.403-403
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• 2011

결정질 태양전지는 태양전지 시장에 큰 서막을 장식하였다. 현재 여러 종류의 태양전지 기술들이 많이 나오고 있지만 결정질 태양전지는 변환 효율이 좋고 신뢰성이 높아서 높은 시장 점유율을 차지하고 있다. 하지만 응용 분야가 적고 기판 가격이 비싸다는 단점이 있다. 현재에는 응용분야 개선을 위하여 Flexible solar cell에 대한 연구가 활발하다. Flexible solar cell에 상부전극은 결정질 태양전지에서 사용되는 Ag나 Al 전극 대신 TCO 종류의 일종인 ITO를 많이 사용한다. Flexible Solar cell은 Organic Solar cell과 Amorphous Solar Cell 두 가지 범주를 가지고 있다. 본 연구에서는 Amorphous Solar Cell의 전극에 사용되는 ITO의 온도 Stress에 따른 특성을 연구함으로써 Engineer의 근본적인 이슈인 저비용, 고효율에 초점을 맞추어 소자특성을 확인해 보도록 한다. Glass에 E-beam evaporation 장비를 이용하여 ITO를 증착하였고 제작된 소자를 200, 250, 300, 350$^{\circ}C$의 온도변수를 두어 1시간동안 Annealing 하였다. 각 Annealing 온도에 따른 Sheet resistivity,와 visible 영역의 transmittant를 측정하였다. visible영역에서의 transmittant는 Annealing 200$^{\circ}C$에서 300$^{\circ}C$로 온도가 증가함에 따라 transmittant는 증가하다가 350$^{\circ}C$에서 감소하였다. Sheet resistivity의 경우 Annealing 200$^{\circ}C$에서 300$^{\circ}C$로 온도가 증가함에 따라 ITO의 Sheet resistivity가 줄어들다가 350$^{\circ}C$에서 증가하였다. 300$^{\circ}C$로 Annealing한 ITO가 가시광선 영역에서 transmittant가 가장 높은 80%로 측정 되었다. Sheet resistivity역시 300$^{\circ}C$로 Annealing한 ITO가 8${\Omega}/{\Box}$로 가장 낮았다. Annealing 온도가 ITO의 electrical 특성과 optical 특성에 변화를 주었음을 알 수 있었다. Resistivity가 낮은 ITO 전극으로 박막 셀을 제작한다면 좋은 효율을 얻을 수 있을 거라 생각된다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.42-48
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• 1993

Ar ions were implanted at 1 MeV into (100)Cz Si wafers with dose of 1 * 10$^{15}$ ions/cm$^{2}$. Damage induced by high energy implantation and its annealing behavior during rapid thermal annealing for 10sec at temperatures from 550 to 1100${\circ}C$ were investigated by crosssection transmission electron microscopy study. It can be clearly seen from the observation that the SPE(Solid Phase Epitaxy) regrowth of the buried amorphous layer induced by ion implantation proceeds from both upper and lower amorphous/crystalline (a/c) interfaces, and the activation energy for SPE from interfaces were both 1.43eV. Misfit dislocation where two interfaces met was formed and it coalesced into the hair pin dislocation in the upper regrown region. At the higher temperature after annealing out of the misfit dislocation, hair pin dislocations showed considerable drop in its bandwidth. However, they were not disappeared even at the temperature 1100${\circ}C$ with the end of range dislocation loops which were formed at the original lower a/c interface.

• Journal of the Korean Magnetics Society
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• v.5 no.4
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• pp.251-260
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• 1995

It has been reported that Co-based amorphous ferromagnetic alloys annealed in a small magnetic field develop a reproducible, asymmetric hysteresis loop. If the direction of the field during annealing is regarded as +, the magnetization reversal from - to + is smooth and reversible, with its slope determined by the demagnetizing field of the sample. This phenomenon is called the asymmetric magnetization reversal (AMR). The shape of the hyster-esis loop depends sensitively on the condition during the anneal and the alloy composition. Here, we report on the effect of the annealing temperature and time on AMR in a zero magnetostrictive ferromagnetic amorphous alloy. The AMR effect develops in a very short time at a reasonably high temperature, but is stabilized by annealing for a prolonged time.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.