• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.378-380
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• 2009

$MgF_2$ is a current material for the optical applications in the UV and deep UV range. Process variables for manufacturing the $MgF_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions, and then by changing a number of vapor deposition conditions and substrate temperature, Annealing conditions variously, structural and Optical characteristics were measured. Thereby, optimum process variables were derived. Nevertheless, modern applications still require improvement of the optical and structural quality of the deposited layers. In the present work, the composition and microstructure of $MgF_2$ single layers grown on slide glass substrate by Electro beam Evaporator(KV-660) processes, were analyzed and compared. The surface Substrate temperature having an effect on the quality of the thin film was changed from $200[^{\circ}C]$ to $350[^{\circ}C]$ at intervals of $50[^{\circ}C]$. and annealing temperature an effect on the thin film was changed from $200[^{\circ}C]$ to $400[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM.

• 한국입자에어로졸학회지
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• 제6권1호
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• pp.21-27
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• 2010

New process consisting of electrospray and epitaxial crystal growth processes was applied to the preparation of c-plane oriented barium ferrite ($BaFe_{12}O_{19}$) thin film for high density magnetic recording media. Sodium citrate aided process was proper to preparation of amorphous $BaFe_{12}O_{19}$ nanoparticles with geometric mean diameter of 3 nm and geometric standard deviation of 1.1. The electrospray was applicable to the prepare of amorphous $BaFe_{12}O_{19}$ thin film on a substrate, and the film thickness could be controlled by adjusting the electrospray deposition time. The c-plane oriented $BaFe_{12}O_{19}$ thin film was successfully prepared by 3 step annealing process of the $BaFe_{12}O_{19}$ amorphous film on a sapphire($Al_2O_3$) substrate; annealing at $350^{\circ}C$ for 30 min, annealing at $500^{\circ}C$ for 30 min, and annealing at $700^{\circ}C$ for 60 min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.115-117
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• 2005

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.

• 한국결정성장학회지
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• 제29권2호
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• pp.50-53
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• 2019

박막 태양전지에 주로 적용되는 다결정 규소층을 AIC(Aluminum Induced Crystallization) 공정을 이용하여 제조하였다. 결정립의 확대를 위하여 selective diffusion barrier 사용하였다. 이 diffusion barrier는 $Al_2O_3$ 막을 사용하였다. 공정시간의 단축을 위하여 열처리는 RTA(Rapid Thermal Annealing) 공정으로 진행하였다. 비정질 실리콘의 결정화는 XRD 측정을 통해 분석했다. 그 결과 $500^{\circ}C$에서 결정화되었으며, 결정 크기는 $15.9{\mu}m$로 계산되었다.

• ETRI Journal
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• 제15권3_4호
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• pp.1-26
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• 1994

Simulated annealing is an attractive, but expensive, heuristic method for approximating the solution to combinatorial optimization problems. Attempts to parallel simulated annealing, particularly on distributed memory multicomputers, are hampered by the algorithm's requirement of a globally consistent system state. In a multicomputer, maintaining the global state S involves explicit message traffic and is a critical performance bottleneck. To mitigate this bottleneck, it becomes necessary to amortize the overhead of these state updates over as many parallel state changes as possible. By using this technique, errors in the actual cost C(S) of a particular state S will be introduced into the annealing process. This paper places analytically derived bounds on this error in order to assure convergence to the correct optimal result. The resulting parallel simulated annealing algorithm dynamically changes the frequency of global updates as a function of the annealing control parameter, i.e. temperature. Implementation results on an Intel iPSC/2 are reported.

• 한국결정성장학회지
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• 제17권1호
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• pp.11-17
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• 2007

The spherical NiZn ferrite particles were prepared by ultrasonic spray pyrolysis with mixed solution of aqueous metal nitrates. The NiZn ferrite particle was observed with nano-sized primary particles of about 10 nm or less before annealing which represented as paramagnetic behavior measured at 77 K and room temperature. The typical abnormal growth of primary particles like polyhedral primary particles was observed by annealing at 1273 K with Zn-concentration dependency. The XRD patterns showed good crystallinity of NiZn ferrite powder after annealing. In annealing process, the intra-particle sintering phenomenon was observed and the spherical particle morphology was collapsed at 1673 K. The saturation magnetization of NiZn ferrite powder for each annealing temperature was decreased with measuring temperature of $77{\sim}$300K.

• Journal of Information Display
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• 제11권1호
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.961-964
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• 2003

This paper presents the temperature annealing effect on the dark current of the InGaAs waveguide photodiodes, which are developed for high-speed optical receivers. The interesting experimental phenomena were observed that the dark current is significantly decreased and the breakdown voltage is slightly increased after annealing at $250^{\circ}C$ whereas the dark current and the breakdown voltage are almost constant after annealing at $200^{\circ}C$. Based on the experimental results, the long-term annealing is more effective for the dark current improvement than the conventional curing process.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1990년도 한국자동제어학술회의논문집(국내학술편); KOEX, Seoul; 26-27 Oct. 1990
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• pp.779-782
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• 1990

Recently batch type cold rolling processes have been replaced by continuous annealing type processes for cold rolled sheets of mild steel and high strength steel in order to obtain higher productivity, labor saving. In the continuous annealing line, it is very important to maintain the target steel strip temperature at the exit side of each furnace. The automation system of continuous annealing line is based on a hierachical composition. This paper shows how to preset the set value of furnace temperature control for the heating section in a continuous annealing line. Saying in other words, this paper presents the development of an adaptive control approach to control the exit strip temperature in the continuous annealing line. There are three parts in this approach; one is a process modelling and another is recursive parameter estimation and the other is a design of temperature controller.

• 한국생산제조학회지
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• 제7권2호
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• pp.108-114
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• 1998

Development on the mechanical properties of steel sheet for the automobile body panel is very important in the BAF(Batch annealing furnace) annealing process. Because of the heat treatment method in the BAF, mechanical properties was decided on the heat treatment method of the coil. So, we tested on the development of mechanical properties according to heat treatment method at the annealing furnace using the Ax(H$_2$75%, $N_2$25%) atmospheric gas and the HNx(H$_2$4%, $N_2$96%) atmospheric gas. As a result of several investigations. We confirmed the following characteristics ; mechanical properties was changed under the influence of the annealing cycle, the heat treatment method and the atmospheric gas. And, elongation in the HNx BAF was better than the Ax BAF. Finally, most important thing in the BAF is using of proper annealing cycle in order to get a good quality.