• Journal of Welding and Joining
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• 제17권1호
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• pp.133-144
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• 1999

To fine seam annealer capacity of through thickness seam annealing in terms of through thickness microstructure change with increased toughness and elongation leaving heat trace on it, high strength steel pipes of ERW with different thickness were tested in different seam annealing temperature measured on the outer surface of pipes. Annealing temperature and microstructure of the weld seam were changed through applied seam annealing condition. Toughness and tensile test with hardness and microstructure analysis were done on the annealed weld seam to fine its characteristics as a primary step and annealing characteristics according to different seam annealing condition. Through a study of annealed ERW weld seam characteristics and seam annealing technology, amount of electric power should apply in decreased manner to arranged inductors of annealer in the order of 1st, 2nd, 3rd, so on for proper seam annealing. For example of 15.4mm thick and 610mm outside diameter pipe, applied power for proper seam annealing is 600 -650kw at 1st inductor, 450 - 500kw at 2nd inductor, 200-250 kw at 3rd inductor of annealer during 10 - 12M/minute moving speed of pipe. Also, the penetration depth of heat trace along the thickness direction of weld during seam annealing can be estimated through the equation 17mm/kv$\times$voltage(kv) with the microstructure and hardness analysis of thick weld seam as well as study of seam annealing and comparison of cooling condition to CCT diagram of low carbon high strength steel. From this result, the difference between the technological applicability of full annealing condition based on phase diagram and full penetration of heat trace based on CCT diagram along the thickness of weld seam is discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.346.2-346.2
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• 2016

The rear side contact recombination in the crystalline silicon solar cell could be reduced by back surface field. We formed polycrystalline silicon as a back surface field through crystallization of amorphous silicon. A thin silicon oxide applied to the passivation layer. We used quasi-steady-state photoconductance measurement to analyze electrical properties with various annealing condition. And, blister formed on surface of wafer during the annealing process. We observed the blister after varied annealing process with wafer of various surface. Shape and density of blister is influenced by various annealing temperature and process time. As the annealing temperature became higher, the average diameter of blister is decreased and total number of blister is increased. The sample with the $600^{\circ}C$ annealing temperature and 1 min annealing time exhibited the highest implied open circuit voltage and lifetime. We predicted that the various shape and density of blister affects the lifetime and implied open circuit voltage.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1995년도 추계학술대회 논문집
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• pp.629-632
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• 1995

The formability of an automobile body panel is very important. So, we performed an annealing condition change for the development of annealing condition with temperature, atmospheric gas and the annealing cycle. Formability was changed under the influenced of the mechanical properties of steel sheet for the automobile body panel. Therefore, ot os important in the BAF(Batch annealing furnace) annealing process. Because mechanical properties were decided on the heat treatment method of the coil. So, we tested the development of mechanical properties according to the heat treatment method at the annealing furnace using the Ax atmospheric gas and the HNx atmospheric gas. As a result of several investigations, we confirmed the following characteristics ; mechanical properties change under the influence of the annealing cycle and atmospheric gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.422-426
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• 2003

Cu thin films of $6000{\AA}$ thickness were deposited by Electron Beam Evaporation(EBE) method on the glass. The resistivity properties and adhesion of Cu thin films were investigated by various annealing and substrate temperature. Cu thin films were annealed in the air and vacuum condition for 10 min after the deposition. The resistivity and adhesion(the force required to separate films from substrates) was measured by 4-point probe and scratch testing. The resistivity of non-annealing Cu thin films was distinguished more substrate temperature loot than substrate temperature R.T, $200^{\circ}C$. In the case of air condition annealing, as heating temperature was increased, the resistivity was decreased. In the case of vacuum condition annealing, the resistivity was increased at heating temperature $200^{\circ}C$. The best resistivity($1.72\;{\mu}{\Omega}{\cdot}cm$) of Cu thin films was obtained by the air condition heating temperature $200^{\circ}C$ at the substrate heating temperature $100^{\circ}C$. As a result of scratch testing, adhesion was increased by annealing. And maximum adhesion had 600 gf.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.692-695
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• 1999

This paper presents annealing characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere)Ar-(5-~25%)$N_2$. The physical and electrical characteristics of these films investigated with the thickness range 3500$\AA$ of CrN thin films, annealing temperature (100~30$0^{\circ}C$) and annealing time (24-72hr) . The optimized condition of CrN thin-film strain gauges were thickness range of 3500$\AA$ and annealing condition(30$0^{\circ}C$ , 48hr) in Ar-10%$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, $\rho$=1147.65$\Omega$cm a low temperature coefficient of 11.17. And change in resistance after annealing for the CrN thin film were quitely linear and stable.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.426-429
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• 2003

In this study, phase transformation characteristics of Nitinol shape memory alloy with 54.5wt%Ni-45.5wt%Ti were investigated by varying with annealing treatment and cutting conditions through DSC(differential scanning calorimetry). Annealing treatment conditions were considered as heat treated time of 5 min, 15 min, 30 min, and 45 min, heat treated temperature of 40$0^{\circ}C$, 50$0^{\circ}C$, 5$25^{\circ}C$, 55$0^{\circ}C$, 575$^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$, 80$0^{\circ}C$, and 90$0^{\circ}C$, and environmental condition of heat treatment under vacuum or air. Cutting conditions were considered as no cutting, one side cutting, and two side cutting. Tensile test was also conducted on Nitinol shape memory alloy to investigate thermomechanical characteristics by varying with annealing heat treatment histories. According to the results, annealing treatment and cutting conditions were found to significantly affect on phase transformation and thermomechanical characteristics of Nitinol shape memory alloy.

• Progress in Superconductivity
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• 제12권1호
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• pp.32-35
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• 2010

Potassium doped $BaFe_2As_2$ superconducting thin films by using an ex situ pulsed laser deposition technique were fabricated in various conditions to find out an optimal growth condition. Controlled conditions were annealing temperature, annealing time, and mass of potassium. The $Ba_{1-x}K_xFe_2As_2$ thin films which has most good quality is fabricated at a condition of annealing temperature at $700^{\circ}C$, annealing time of 60 minutes, and 0.6 g of potassium lumps. In this condition we were able to fabricate good quality films with high transition temperature of ~ 39 K.

• 국제학술발표논문집
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• The 2th International Conference on Construction Engineering and Project Management
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• pp.777-786
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• 2007

This paper presents a modified simulated annealing algorithm to optimize linear scheduling projects with multiple resource constraints and its effectiveness is verified with a proposed problem. A two-stage solution-finding procedure is used to model the problem. Then the simulated annealing and the modified simulated annealing are compared in the same condition. The comparison results and the reasons of improvement by the modified simulated annealing are presented at the end.

• 대한금속재료학회지
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• 제56권12호
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• pp.861-869
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• 2018

To determine the origin of the inhomogeneous microstructure and texture observed in drawn and annealed high purity copper wires, two kinds of drawing process conditions and their influence was investigated. The regular condition, based on a symmetric die, and a condition designed intentionally to produce an inhomogeneous shear deformation using an asymmetric die were employed. The difference in intensity of <111>-<100> distributed texture between the two wires confirmed that the wire drawn under the asymmetric die condition experienced a higher amount of shear deformation. The extensive shear strain in the wire drawn under the asymmetric die condition gave rise to inhomogeneous primary and secondary recrystallization behavior. After annealing at $200^{\circ}C$, grains with <100> texture, which were larger than the surrounding recrystallized grains, were extensively present on one half circle of the wire drawn under the asymmetric die condition, while larger grains with <100> were sparsely observed around the middle region of the wire drawn under the regular condition. Interestingly, the area where the larger grains with <100> texture existed was identical to the area where the high shear strain occurred during drawing in both wires. During annealing at $400^{\circ}C$, grains with <112> texture started to grow abnormally at the center of both wires as a result of secondary recrystallization. After annealing at $900^{\circ}C$ grains with <112> due to secondary recrystallization occupied the entire region of the wire drawn under the regular condition. On the other hand, in the wire drawn under the asymmetric die condition and then annealed at $900^{\circ}C$, the <100> oriented grains as a result of the normal grain growth of the larger <100> grains which were observed after annealing at $200^{\circ}C$, coexisted with the abnormally grown <112> grains. These results indicate that dynamic recrystallization induced by the shear strain during drawing plays an important role in the inhomogeneity of the microstructure and texture of wires after annealing.