• 한국결정성장학회지
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• 제7권3호
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• pp.449-455
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• 1997

KOH 용액을 이용한 단결정 실리콘의 이방성 식각 특성을 조사하였다. n형 (100) 단결정 실리콘 웨이퍼를 시료로 사용하였으며, 식각 비율이 월등히 작은 $SiO_2$층을 실리콘 식각의 마스크로 사용하였다. 실리콘의 식각속도와 식각상태는 KOH 용액의 농도와 온도조건 뿐만 아니라 용액의 균일도, 용액의 교반속도와 교반방향 등에 따라 큰 차이가 발생하였다. 실리콘의 식각 속도는 KOH 농도가 낮아질수록 증가하며, 온도는 높아질수록 증가하는 경향을 보였으며, 20 wt%~50 wt%의 농도 범위와 $50^{\circ}C~105^{\circ}C$의 온도 범위에서 식각속도는 $10\mu \textrm{m}/hr~250\mu\textrm{m}/hr$로서 큰 폭으로 변화하였다. 식각된 표면의 거칠기중 hillock의 발생은 (100)면과 (111)면의 식각 속도 비율이 커질수록 증가함을 알 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제35권6호
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• pp.1737-1742
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• 2014

In this research, we further developed the one-step seed mediated method to synthesize gold nanoparticles (GNPs) and control their resulting shapes to obtain hexagonal, triangular, rod-shaped, and spherical gold nanostructures. Our method reveals that the reaction kinetics of formation of GNPs with different shapes can be controlled by the rate of addition of ascorbic acid, because this is the critical factor that dictates the energy barrier that needs to be overcome. This in turn affects the growth mechanism process, which involves the adsorption of growth species to gold nanoseeds. There were also observable trends in the dimensions of the GNPs according to different rates of addition of ascorbic acid. We performed further analyses to investigate and confirm the characteristics of the synthesized GNPs.

• Journal of Welding and Joining
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• 제34권1호
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• pp.35-40
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• 2016

Recent developments of Laser metal 3D deposition with wire feeding are reviewed which provide an alternative to powder feeding method. The wire feeding direction, angle and position as well as laser power, wire feeding rate, and deposition speed are found to be key parameters to make quality deposition with high throughput. When compared with the powder feed, the wire feed shows higher material efficiency, higher deposition rate, and smoother surface. Large elongated columnar grains which have epitaxial growth across deposit layers are observed in deposit cross sections. The growth direction is parallel to the thermal gradient during the deposit process. Tensile properties are found to be dependent on the direction due to the anisotropic deposit property. A real-time feedback control is demonstrated to be effective to improve the deposition stability.

• 한국분말재료학회지
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• 제4권1호
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• pp.9-17
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• 1997

The mullite-zirconia composites were prepared by the pressureless sintering with addition of 10~20 vol% ZrO$_2$(TZ3Y) in the fused mullite and sol-gel mullite matrix. The densification rate of sol-gel mullite was higher than that of fused mullite, and the addition of ZrO$_2$(TZ3Y) was effective on the densification of fused mullite. The enhancement of densification and anisotropic growth of mullite in ZrO$_2$added specimen can be explained by the solid solution effect of $Zr^{+4}$ ion in mullite. Both mechanical strength and fracture toughness of mullite-zirconia composite were enhanced compared to those of mullite. The enhancement of mechanical properties is attributed to the hinderance of grain growth and the combined toughening effects of tetra-mono phase transformation and crack deflection due to the residual stress between mullite/ZrO$_2$.

• 한국세라믹학회지
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• 제56권3호
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• pp.269-276
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• 2019

This article reports on the conditions required for the growth of crystalline boron films on silicon substrates by hot filament chemical vapor deposition method. The reactive gas was 3% diborane diluted in hydrogen. The films were characterized by optical, electronic, and atomic force microscopies; x-ray diffraction; and energy dispersive, electron energy loss, Raman, x-ray photoelectron, and Auger spectroscopies. The parameters that affect the morphologies of the films have been investigated. It was concluded that faceted crystals are produced at low B₂H₆ flows and working pressures below 200 mT. α-boron is produced between 530 and 600℃. Deposition outside this range produces thin films with a wide variety of morphologies. This result indicates that the films crystallize through a process called "abnormal or discontinuous grain growth." It is assumed that this is due to the anisotropic surfaces of boron allotropes.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.87-90
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• 1998

ABSTRACT- we have analyzed the effect of microstructure and interface conditions on the anisotropic exchange filelds of NiO/NiFe bilayers. The NiO films were deposited by R.F. magentron sputtering. By using different atgon pressure NiO Films, Grain Size And Surface Roughness Of NiO can be manipulated. The exchange field is enhanced in the small granined NiO And This Increment Is Based On The Formation Of Small Domains In NiO

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.1-33
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• 2000

Silicon carbide ceramics with sintering additives from the system AlN-Y$_2$O$_3$ can be gas-pressure sintered to theoretical density. While commonly a combination of sesquioxides is used such as Al$_2$O$_3$-Y$_2$O$_3$, the oxynitrid additives offer the advantage that only a nitrogen atmosphere is require instead of a powder. By starting form a mixture of ${\beta}$-SiC and ${\alpha}$-SiC, and by performing dedicated heat treatments after densification, anisotropic grain growth is obtained which leads to a platelet microstructure showing enhance fracture toughness. In the present work, recent improvement of the mechanical behaviour of these materials at ambient and high temperatures is reported. By means of a surface oxidation treatment in air it is possible to obtain four-point bending strengths in excess of 1 GPa, and the strength retention at high temperatures is significantly improved.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.341-350
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• 2023

압전 세라믹스는 전기에너지와 기계에너지를 상호 전환할 수 있는 성질을 기반으로 엑츄에이터 및 트렌스듀서 등에 사용되는 핵심 소재이다. 결정배향 성장법(TGG)은 다결정 세라믹스의 압전 특성을 획기적으로 향상시킬 수 있는 방법으로 많은 주목을 받고 있다. 하지만, TGG 방식을 통해 결정립을 배향하는 과정은 여러 단계의 최적화가 필요하기 때문에 입문자에게는 상당히 도전적인 기술이다. 따라서 이 기고문에서는 입문자의 입장에서 TGG를 가장 쉽게 접근할 수 있도록 납작한 모양의 템플릿을 합성하기 위한 용융염 합성기법 및 실제 결정배향을 위한 Tape Casting 과정 나아가 배향도를 향상시키기 위해 주의할 점에 이르기까지 TGG 전반에 대한 내용을 제공하고자 한다. 본 기고문이 TGG 방법에 대한 이해도를 높이고 활용 및 개선하고자 하는 모든 연구자들에게 정보 및 통찰을 제공할 수 있는 기본 참고서가 되기를 희망한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 한국결정성장학회지
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• 제14권3호
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• pp.95-100
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• 2004

This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts with respect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the agglomeration of the coherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-difference numerical method. The interface atomic diffusion is taken to be the dominant transport mechanism where both capillarity and elastic strain are considered for the driving forces. Under plane strain condition with elastically homogeneous and anisotropic system with cubic symmetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the film thickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibrium aspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only a function of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since the equilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to silicon area, and may deteriorate the electrical performances.