• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.312-320
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• 2003

This work describes an 8b 200 MHz 0.18 urn CMOS analog-to-digital converter (ADC) based on a pipelined architecture for flat panel display applications. The proposed ABC employs an improved bootstrapping technique to obtain wider input bandwidth than the sampling tate of 200 MHz. The bootstrapuing technique improves the accuracy of the input sample-and-hold amplifier (SHA) and the fast fourier transform (FFT) analysis of the SHA outputs shows the 7.2 effective number of bits with an input sinusoidal wave frequency of 500 MHz and the sampling clock of 200 MHz at a 1.7 V supply voltage. Merged-capacitor switching (MCS) technique increases the sampling rate of the ADC by reducing the number of capacitors required in conventional ADC's by 50 % and minimizes chip area simultaneously. The simulated ADC in a 0.18 um n-well single-poly quad-metal CMOS technology shows an 8b resolution and a 73 mW power dissipation at a 200 MHz sampling clock and a 1.7 V supply voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1442-1447
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• 2004

In this paper, a 6-Bit CMOS Folding and Interpolating AD Converter is presented. The converter is considered to be useful as an integrated part of a VLSI circuit handling both analog and digital signals as in the case of HDD or LAN applications. A built-in analog circuit for VLSI of a high-speed data communication requires a small chip area, low power consumption, and fast data processing. The proposed folding and interpolating AD Converter uses a very small number of comparators and interpolation resistors, which is achieved by cascading a couple of folders working in different principles. This reduced number of parts is a big advantage for a built-in AD converter design. The design is based on 0.25m double-poly 2 metal n-well CMOS process. In the simulation, with the applied 2.5V and a sampling frequency of 500MHz, the measurements are as follows: power consumption of 27mw, INL and DNL of $\pm$0.1LSB, $\pm$0.15LSB each, SNDR of 42dB with an input signal of 10MHz.

• Journal of IKEEE
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• v.18 no.1
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• pp.172-178
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• 2014

This paper describes the design technique and the method of analog front-end to measure the saturation of hemoglobin with oxygen sensor. To process the $SpO_2$ value from the sensor, the current data from the sensor should be converted into voltage domain. Designed analog front-end usually converts the current data from the sensor into voltage domain data to pass it on analog-to-digital converter called ADC with a different level of gain characteristics. This circuit was fabricated in a $0.11{\mu}m$ CMOS technology and has 4 level of gain properties. The occupied area is $0.174mm^2$.

• Journal of IKEEE
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• v.2 no.2 s.3
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• pp.278-284
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• 1998

This paper describes a l0b CMOS A/D converter (ADC) for HDTV applications. The proposed ADC adopts a typical multi-step pipelined architecture. The proposed circuit design techniques are as fo1lows: A selective channel-length adjustment technique for a bias circuit minimizes the mismatch of the bias current due to the short channel effect by supply voltage variations. A power reduction technique for a high-speed two-stage operational amplifier decreases the power consumption of amplifiers with wide bandwidths by turning on and off bias currents in the suggested sequence. A typical capacitor scaling technique optimizes the chip area and power dissipation of the ADC. The proposed ADC is designed and fabricated in s 0.8 um double-poly double-metal n-well CMOS technology. The measured differential and integral nonlinearities of the prototype ADC show less than ${\pm}0.6LSB\;and\;{\pm}2.0LSB$, respectively. The typical ADC power consumption is 119 mW at 3 V with a 40 MHz sampling rate, and 320 mW at 5 V with a 50 MHz sampling rate.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.948-950
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• 2003

In this literature, the CMOS current mode fout quadrant differentiator circuit is proposed. The implementation is base on an appropriate input stage that converts the input current into a compressed voltage at the input capacitor ($C_{gs}$) of the CMOS driver circuit. This input voltage use as the control output current which flow to the output node by passing through a MOS active load and use it as the feedback voltage to the input node. Simulation results with level 49 CMOS model of MOSIS are given to demonstrate the correct operation of the proposed configuration. But the gain of the circuit is too low so the output differentiate current also low. The proposed differentiator is expected to find several applications in analog signal processing system.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.5
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• pp.94-103
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• 1997

It is necesary that analog buffer circuit should drive an external load in the VLSI design such as switched capacitor efilter (SCF), D/A converter, A/d converter, telecommunicatin circuit, etc. The conventional CMOS buffer circuit have many probvlems according as CMOS technique. Firstly, Capacity of large load ar enot able to opeate well. The problem can be solve to use class AB stages. But large load are operated a difficult, because an element of existing CMOS has a quadratic functional relation with inptu and outut voltage versus output current. Secondly, whole circuit of dynamic rang edecrease, because a range of inpt and output voltages go down according as increasing of intergration rate drop supply voltage. In this paper suggests that new differential CMOS line driver make out of operating an external of large load. In telecommunication's chip case transmission line could be a load. It is necessary that a load operate line driver. The proposal circuit is planned to hav ea high generation power rnage of voltage with preservin linearity. And circuit of capability is inspected through simulation program (HSPICE).

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.73-81
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• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• ETRI Journal
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• v.33 no.3
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• pp.393-400
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• 2011

A systematic approach for the design of two-stage class AB CMOS unity-gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity-gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 ${\mu}m$ CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 ${\mu}W$).

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.960-964
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• 2003

In this paper, the CMOS integrated circuit technique for implementing current-mode maximum and minimum operations scheme is described. The maximum and minimum operations are incorporated into the same scheme with parallel processing. Using this scheme as the basic unit, an analog three-input maximum, median, and minimum circuit is designed. The performance of the proposed circuit shows a very sharp transfer characteristic and high accuracy. The proposed circuit achieves a high-speed operation, which is suitable for real-time systems. The PSPICE simulation results demonstrating the characteristic of the proposed circuit are included.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.73-77
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• 2003

This paper presents a high-speed algorithmic analog-to-digital converter (ADC), which is based on gray coding. The realization method makes use of a two-input maximum circuit to provide a high-speed operation and a low-distortion in the transfer characteristic. The proposed ADC based on the CMOS integrated circuit technique is simple and suitable for implementing a highresolution ADC. The performances of the proposed circuit were studied using the PSPICE analog simulation program. The simulation-results verifying the circuit performances are agreed with the expected values.