• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.57-62
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• 2014

미래형 유연소자 개발 시 비용감소 및 공정적합성 개선을 위해 동박을 잉크젯 프린팅법을 이용해 공중합체 유연기판 상 형성하고, 전기적 특성에 열처리 분위기가 미치는 영향을 확인하기 위해 3 종류의 환원분위기에서 열처리를 진행하여 보았다. 그 결과 200도의 낮은 온도에서 환원 특성이 뛰어난 포름산 분위기에서 전도체 수준의 비저항은 얻을 수 있었으나, 열처리 시 발생하는 응력으로 인해 발생된 표면균열에 기인해 그 값이 기존 동박에 비해 매우 높았다. 이에 비정질재료에서 응용되는 응력해소법을 응용하여 표면균열을 억제한 결과 230도 열처리 시 기존 열처리 방법에서는 $7.4{\mu}{\Omega}cm$의 비저항을 보이나, 응력해소를 통한 표면 균열이 억제된 시편에서는 $3.4{\mu}{\Omega}cm$의 비저항 값을 얻을 수 있었다. 특히 등온열처리에 의한 응력해소 효과를 확인하기 위해 동일 온도에서 등온시간 없이 열처리를 진행한 결과, 표면균열이 억제되지 못함을 확인할 수 있었다.

• Composites Research
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• 제30권6호
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• pp.371-378
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• 2017

본 연구에서는 대표적인 열경화성 재료인 에폭시 기지의 흡습탄성 거동을 예측하기 위해 분자동역학 전산모사를수행하였다. 고분자 복합재가 오랜 시간 동안 흡습환경에 지속적으로 노출될 경우, 거시적 물성의 저하가 발생하기 때문에 복합재의 내구설계 측면에 있어 흡습노화 현상에 대해 분자스케일적으로 접근하는 방법은 매우 중요하다. 본 연구에서는 $EPON862^{(R)}$ 수지와 아민계 Triethylenetetramine (TETA) 경화제로 비정질 에폭시 분자모델을 구성하였으며, 각각 30과 90%의 가교 상태에서 수분 흡수 유무에 따른 물성변화를 관찰하였다. 건조상태의 에폭시와 수분이 4 wt% 포함된 에폭시 단위셀에 대한 평형 및 비평형 앙상블 전산모사 과정을 통해, 에폭시의 수분팽창계수, 응력-변형률 선도 및 탄성계수 그리고 침투된 수분의 수지 내 확산계수를 예측하였다. 또한 흡습된 구조와 그에 따른 물성변화의 상관관계를 규명하기 위해, 자유체적 변화 및 흡습에 따른 에폭시 수지의 비결합 포텐셜 에너지 변화를 관찰하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.126-126
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• 2018

최근 차세대 디스플레이인 flexible 하고 transparent 한 디스플레이 개발이 진행 중 이며, 이러한 디스플레이가 개발 되기 위해 백 플레인으로 사용되는 Thin Film Transistor (TFT) 또한 차세대 디스플레이 못지 않게 연구가 진행 되고 있다. 기존의 무기물을 기반으로 하고 Rigid한 TFT는 현재 많은 곳에 적용이 되어 사람들이 사용 하고 있다. 하지만 이미 시장은 포화상태이며 차세대 디스플레이 컨셉인 flexible 하고 투명한 것과 맞지 않는다. 그래서 유연하며 투명한 특성을 가진 TFT에 대한 연구가 활발히 진행 되고 있으며 많은 성과를 이루었다. 이러한 소자를 이용하여 훗날 Electronic-skin(e-skin)이라 부르는 전자 피부를 활용하여 실시간 모니터링 할 수 있는 헬스 케어 분야 등에 활용 가치 또한 높다. 현재 유연하며 투명한 기판 및 물질 개발에 많은 연구 개발이 진행 되고 있다. 하지만 유연한 기판을 사용하여 TFT를 제작한 후 stress나 bending에 대한 내구성과 안정성, 신뢰성 등이 무기물을 기반으로 한 TFT에 비해 좋지 않은 실정이다. 따라서 유연하며 투명한 기판을 사용한 TFT에 대한 안정성, 신뢰성 등을 확보하여야 한다. 본 연구 에서는 유연한 기판을 사용하여 TFT를 제작 한 후, TFT특성과 안정성을 확보하는 것을 목표로 실험을 진행하였다. 우리는 Mo전극과 Parylene 기판을 사용하여 유연한 TFT소자를 탑 게이트 구조로 제작 하였고 Rigid한 Glass기판 위에 Floating Process를 진행하기 위해 PVA층을 코팅 후 그 위에 Parylene을 CVD로 증착 하고 IGZO를 Sputter를 사용해 증착했다. Parylene은 DI Water 70도에서 Floating 공정을 통해 Rigid 기판에서 탈착 시켰다. 유연한 기판 위에 TFT를 제작 후 bending에 대한 특성 변화 및 안정성에 대한 측정을 실시하였다. Bending에 대한 특성 변화는 우수한 결과가 나왔지만 안정성 측정 중 Negative Bias Stress(NBS) 상에서 비정상적인 On Current Drop 현상이 발생 되었다. Parylene과 Channel층 사이 interface roughness로 인해 charge trap이 되고 이로 인해 On Current Drop 이라는 현상으로 나타났다. 그래서 우리는 Parylene 기판과 Channel 층간의 surface roughness를 개선하기 위한 방법으로 UV Treatment를 사용하였고 시간을 다르게 하여 surface 개선을 진행했다. Treatment 시간을 증가 시킴에 따라 Surface roughness가 많이 좋아 졌으며, Surface를 개선하고자 비정상적인 On Current Drop 현상이 없어졌으며 위 실험으로 Polymer의 surface roughness에 따라 TFT에 대한 안정성에 대한 신뢰성이 확보 될 수 있는 것을 확인 하였다.

• Bulletin of the Korean Chemical Society
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• 제30권10호
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• pp.2371-2376
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• 2009

Three phenoxazine-based conjugated polymers, namely, the aryl substituted phenoxazine homopolymer (P1) as well as the dimeric phenoxazine-fluorene (P2) and phenoxazine-bithiophene (P3) copolymers, were synthesized via the Ni(0) mediated Yamamoto reaction and the palladium-catalyzed Suzuki coupling reaction. The weight-averaged molecular weights ($M_w$) of P1, P2, and P3 were found to be 27,000, 22,000, and 15,000, respectively, and their polydispersity indices were 3.6, 1.8, and 2.1. All the polymers were soluble in common organic solvents such as chloroform, toluene, and so on. The UV-visible absorption maxima for P1, P2, and P3 in the film state were located at 421, 415 and 426 nm, respectively, and the ionization potentials of the polymers ranged between 4.90 and 5.12 eV. All the studied phenoxazine-based polymers exhibited amorphous behavior, as confirmed by X-ray diffraction (XRD) and atomic force microscopy (AFM) studies. Thin film transistors were fabricated using the top-contact geometry. P1 showed much better thin-film-transistor performance than P2 or P3: A thin film of P1 gave a saturation mobility of 0.81 ${\times}\;10^{-3}\;cm^2V^{-1}s^{-1}$ and an on/off ratio of about $10^2$.

• Macromolecular Research
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• 제12권1호
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• pp.1-10
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• 2004

The structural changes occurring in the isothermal crystallization processes of polyethylene (PE), poly-oxymethylene (POM), and vinylidene fluoridetrifluoroethylene (VDFTrFE) copolymer have been reviewed on the basis of our recent experimental data collected by the time-resolved measurements of synchrotron-sourced wide-angle (WAXS) and small-angle X-ray scatterings (SAXS) and infrared spectra. The temperature jump from the melt to a crystallization temperature could be measured at a cooling rate of 600-1,000 $^{\circ}C$/min, during which we collected the WAXS, SAXS, and infrared spectral data successfully at time intervals of ca. 10 sec. In the case of PE, the infrared spectral data clarified the generation of chain segments of partially disordered trans conformations immediately after the jump. These segments then became transformed into more-regular all-trans-zigzag forms, followed by the formation of an orthorhombic crystal lattice. At this stage, the generation of a stacked lamella structure having an 800-${\AA}$-long period was detected in the SAXS data. This structure was found to transfer successively to a more densely packed lamella structure having a 400-${\AA}$-long period as a result of the secondary crystallization of the amorphous region in-between the original lamellae. As for POM, the formation process of a stacked lamella structure was essentially the same as that mentioned above for PE, as evidenced from the analysis of SAXS and WAXS data. The observation of morphology-sensitive infrared bands revealed the evolution of fully extended helical chains after the generation of lamella having folded chain structures. We speculate that these extended chains exist as taut tie chains passing continuously through the neighboring lamellae. In the isothermal crystallization of VDFTrFE copolymer from the melt, a paraelectric high-temperature phase was detected at first and then it transferred into the ferroelectric low-temperature phase at a later stage. By analyzing the reflection profile of the WAXS data, the structural ordering in the high-temperature phase and the ferroelectric phase transition to the low-temperature phase of the multi-domain structure were traced successfully.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.98-98
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• 2010

Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국진공학회지
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• 제6권4호
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• pp.348-353
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• 1997

DC saddle-field plasma enhanced chemical vapor deposition(PECVD) 장치를 이용 하여 상온에서 p-type Si(100) 기판위에 hydrogenated amorphous carbon(a-C:H) 박막을 증 착하고 기판의 bias 전압 변화에 따른 박막의 미세구조 변화와 광학적 특성을 연구하였다. 본 실험시 CH4 가스의 유량은 5sccm, 진공조의 $CH_4$ 가스압력은 90mtorr로 일정하게 유지 하였으며 기판의 bias 전압($V_s$)은 0V에서 400V까지 변화시켰다. Rutherford backscattering spectroscopy(RBS)와 elastic recoil detection(ERD) 측정결과 증착된 a-C:H박막의 증착율은 $V_s$=0V에서 $V_s$=400V로 증가함에 따라 45$\AA$/min에서 5$\AA$/min으로 크게 감소하였지만 박막 내의 수소 함유량은 15%에서 52%까지 크게 증가하였다. a-C:H박막내의 수소 함유량이 증 가함에 따라 a-C:H박막은 sp3CH3구조의 polymer like carbon(PLC) 구조로 변환되는 것을 FT-IR로 확인하였으며 Raman 측정 결과 $V_s$=100V와 $V_s$=200V에서 증착한 a-C:H 박막에서 만 C-C결합에 의한 disorder 및 graphite peak를 볼 수 있었다. Photoluminescence(PL) 측 정 결과 $V_s$=200V까지는 기판의 bias 전압이 증가함에 따라 PL세기는 증가하였으나 그 이 상의 인가전압에서는 PL세기가 점점 감소하였다. 특히 $V_s$=200V에서 제작한 a-C:H박막의 PL특성은 상온에서도 눈으로 보일 만큼 우수한 발광 특성을 보였으며, 기판 bias전압이 증 가함에 따라 PL peak 위치가 청색으로 편이하는 경향을 보였다. 이러한 발광 세기의 변화 는 $V_s$=0V부터 $V_s$=200V까지는 기판의 bias전압이 증가함에 따라 상대적으로 박막의 표면에 충돌하는 이온에너지의 감소로 인해 a-C:H박막내에 비발광 중심으로 작용하는 dangling bond가 감소하여 발광의 세기가 증가하였으며 $V_s$=300V이상에서는 박막내의 수소 함유량이 증가함에 따라 dangling bond수는 감소하나 발광 중심으로 작용하는 탄소간의 $\pi$결합을 포 함하는 cluster가 줄어들어 PL세기가 감소한 것으로 생각된다.

• Journal of Pharmaceutical Investigation
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• 제32권3호
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• pp.185-190
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• 2002

To improve the solubility of poorly water-soluble drug and to develop a sustained release tablets, the need for the technique, the formation of solid dispersion with polymeric materials that can potentially enhance the dissolution rate and extent of drug absorption was considered in this study. The 1:1, 1:4, and 1:5 solid dispersions were prepared by spray drying method using PVP K30, ethanol and methylene chloride. The dissolution test was carried out at in phosphate buffer solution at $37^{\circ}C$ in 100 rpm. Solid dispersed drugs were examined using differential scanning calorimetry and scanning electron microscopy, wherein it was found that felodipine is amorphous in the PVP K30 solid dispersion. Felodifine SR tablets were prepared by direct compressing the powder mixture composed of solid dispersed felodipine, lactose, Eudragit and magnesium stearate using a single punch press. In order to develop a sustained-release preparation containing solid dispersed felodipine, a comparative dissolution study was done using commercially existing product as control. The dissolution rate of intact felodipine, solid dispersed felodipine and its physical mixture, respectively, were compared by the dissolution rates for 30 minutes. The dissolution rates of felodipine for 30 minutes from 1:1, 1:4, 1:5 PVP K30 solid dispersion were 70%, 78% and 90%. However, dissolution rate offelodipine from the physical mixture was 5% of drug for 30 minutes. Our developed product Felodipine SR Tablet showed dissolution of 17%, 50% and 89% for 1, 4, and 7 hours. This designed oral delivery system is easy to manufacture, and drug releases behavior is highly reproducible and offers advantages over the existing commercial product. The dissolution rate of felodipine was significantly enhanced, following the formation of solid dispersion. The solid dispersion technique with water-soluble polymer could be used to develop a solid dispersed felodipine SR tablet.