• 한국세라믹학회지
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• 제43권11호
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• pp.703-709
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• 2006

We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.

• Journal of Magnetics
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• 제15권4호
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• pp.169-172
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• 2010

The coercivity mechanism in permanent magnets was analyzed according to the effects of domain nucleation and domain wall pinning. The coercivity mechanism of a TbCo thin film with high perpendicular magnetic anisotropy was considered in terms of the local inhomogeneity in the thin film. The initial magnetization curves of the TbCo thin films demonstrated domain wall pinning to be the main contributor to the coercivity mechanism than domain nucleation. Based on the coercivity model proposed by Kronmuller et al., the inhomogeneity size acting as a domain wall pinning site was determined. Using the measured values of perpendicular anisotropy constant ($K_u$), saturation magnetization ($M_s$), and coercivity ($H_c$), the inhomogeneity size estimated in a TbCo thin film with high coercivity was approximately 9 nm.

• 한국재료학회지
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• 제21권1호
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• pp.28-33
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• 2011

This paper describes the fabrication of AlN thin films containing iron and iron nitride particles, and the magnetic and electrical properties of such films. Fe-N-Al alloy films were deposited in Ar and $N_2$ mixtures at ambient temperature using Fe/Al composite targets in a two-facing-target DC sputtering system. X-ray diffraction results showed that the Fe-N-Al films were amorphous, and after annealing for 5 h both AlN and bcc-Fe/bct-$FeN_x$ phases appeared. Structure changes in the $FeN_x$ phases were explained in terms of occupied nitrogen atoms. Electron diffraction and transmission electron microscopy observations revealed that iron and iron nitride particles were randomly dispersed in annealed AlN films. The grain size of magnetic particles ranged from 5 to 20 nm in diameter depending on annealing conditions. The saturation magnetization as a function of the annealing time for the $Fe_{55}N_{20}Al_{25}$ films when annealed at 573, 773 and 873 K. At these temperatures, the amount of iron/iron nitride particles increased with increasing annealing time. An increase in the saturation magnetization is explained qualitatively in terms of the amount of such magnetic particles in the film. The resistivity increased monotonously with decreasing Fe content, being consistent with randomly dispersed iron/iron nitride particles in the AlN film. The coercive force was evaluated to be larger than $6.4{\times}10^3Am^{-1}$ (80 Oe). This large value is ascribed to a residual stress restrained in the ferromagnetic particles, which is considered to be related to the present preparation process.

• 한국자기학회지
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• 제7권5호
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• pp.250-257
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• 1997

Ar+N$_{2}$ 가스분위기에서 반응성 스퍼터링법으로 제조된 Fe-Nb-B-N 박막의 미세구조 및 자기적 특성을 조사하였다. 질소첨가한 적정조성의 Fe-Nb-B-N 박막은 우수한 고주파 연자기 특성을 보였는데, 그 특성은 다음과 같다. 포화자화(4 .pi. M$_{s}$ )는 16.5 kG, 보자력(H$_{c}$)은 0.13 Oe, 1 MHz에서의 실효투자율은 약 5,000의 값을 나타내었다. 특히 실효투자율은 10 MHz까지 겨의 변화가 없었으며, 100 MHz에서도 약 2,000의 값을 보여 매우 우수한 고주파 특성을 가진 재료로 판단된다. 한편, 이러한 우수한 특성을 지닌 Fe-Nb-B-N 박막의 미세구조를 TEM으로 관찰한 결과, 적정 열처리온도인 590 .deg. C에서 열처리한 Fe-Nb-B-N 박막은 약 5 ~ 10 nm의 .alpha. -Fe phase, Nb-nitride의 석출물과 Nb-B rich 비정질상 등으로 이루어져 있음을 알 수 있었다. 반면에 N이 첨가되지 않은 Fe-Nb-B 박막의 경우에는 약 10 nm정도의 .alpha. -Fe결정립과 Nb-B rich 비정질상의 두가지 상으로 이루어져 있다. 따라서 N을 첨가한 경우에 더욱 미세한 .alpha. -Fe 결정립을 얻을 수 있음이 확인되었다. 이는 N 첨가로 인한 결정립의 미세화 효과 와 Nb-nitride 형성으로 인한 결정립 성장의 억제효과에 의한 것으로 생각된다. 따라서 Fe-Nb-B-N 박막의 우수한 연자기 특성은 결정립 미세화에 기인하는 것으로 판단된다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.60-61
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• 2003

Theoretical considerations on a giant magneto-impedance (GMI) effect in amorphous ribbons (i.e., thin films) have been made in terms of the expressions of effective permeability and impedance derived in the frame of classical electrodynamics and ferromagnetism. The dependence of GMI effect on the external do magnetic field (H$\_$ext/) and the frequency of alternating current are simulated and discussed in the knowledge of energy conversion consisting of the current energy loss, the ferromagnetic energy consumption, and the magnetic energy storage in the film. The obtained results are summarized as follow: (a) As frequency f< 20 ㎒, the real part of effective permeability (${\mu}$′) changes slightly. The peak of the ${\mu}$′curve always locates at H$\_$ext/=H$\_$ani/ - the anisotropy field. However, the peak value of ${\mu}$′ tends to increase with increasing frequency in the frequency range of 11-20 ㎒. (b) In the frequency range, f= 21-23 ㎒, a negative peak additionally appears. Meanwhile, both the positive and negative peak values rapidly increase with increasing frequency and their peak positions shift towards a high H$\_$ext/. (c) The positive peak value of ${\mu}$′ starts to decrease at f= 29 ㎒ and its negative peak does so at about 35 ㎒. Then, both peaks keep such a tendency and their peak positions move to high H$\_$ext/, as increasing frequency. (d) The dependence of the imaginary part of effective permeability (${\mu}$") on the external dc magnetic field and the frequency of the alternating field indicates that there is only one peak involved in ${\mu}$" for the whole frequency range. (e) The impedance vs. magnetic field curves at various frequencies show that there is a critical value of frequency around f= 18-19 ㎒ where the transition between two frequency regimes occurs; the one (low frequency) in which ${\mu}$′ predominantly contributes to the GMI effect and the other (high frequency) in which ${\mu}$" determines the GMI effect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Tribology and Lubricants
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• 제38권3호
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• pp.101-108
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• 2022

The structure and properties of tetrahedral amorphous carbon (ta-C) coatings depend on the main process parameters and bending angles of the magnetic field filter used in the filtered cathodic vacuum arc (FCVA). During the process, it is possible to effectively control the plasma flux of carbon ions incident on the substrate by controlling the arc discharge current, thereby influencing the mechanical properties of the coating film. Furthermore, we can control the size and amount of large particles mixed during carbon film formation while conforming with the bending angle of the mechanical filter mounted on the FCVA; therefore, it also influences the mechanical properties. In this study, we consider tribological characteristics for filtered bending angles of 45° and 90° as a function of arc discharge currents of 60 and 100 A, respectively. Experiment results indicate that the frictional behavior of the ta-C coating film is independent of the bending angle of the filter. However, its sliding wear behavior significantly changes according to the bending angle of the FCVA filter, unlike the effect of the discharge current. Further, upon changing the bending angle from 45° to 90°, abrasive wear gets accelerated, thereby changing the size and mixing amount of macro particles inside the coating film.

• 한국자기학회지
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• 제4권3호
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• pp.244-248
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• 1994

NdTbFeCo 합금막 및 NdTbFeCo/TbFeCo 이층막에 대한 자기광학 Kerr 회전각(${\theta}_{k}$)의 파장의존성 및 자기적 특성을 조사하였다. FeCo의 조성을 일정하게 유지하고 NdTbFeCo 합금막에서 Tb의 일부를 Nd로 치환한 결과, Nd 조성이 증가할 수록 400 nm의 파장영역에서 ${\theta}_{k}$는 증대되었으나, 보자력과 각형비가 급격히 감소하였다. NdTbFeCo 막이 단파장에서 큰 ${\theta}_{k}$를 나타냄에도 불구하고 보자력이 작아 단파장용 광자기기록 매체로서 응용가능성이 희박할 것으로 생각되어, 보자력이 큰 TbFeCo 막과 교환결합 이층막을 제작하였다. 제작된 시료중 $Nd_{16.9}Tb_{15.2}Fe_{50.4}Co_{17.5}(150\;{\AA})/Tb_{21.1}Fe_{65.0}Co_{13.9}(300\;{\AA})$ 교환결합 이층막이 6.0 KOe의 보자력과 500 nm에서 $0.32^{\circ}$의 ${\theta}_{k}$를 나타내었다.

• 한국세라믹학회지
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• 제43권3호
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• pp.143-147
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• 2006

Co-Fe-Al-O nanogranular thin films were fabricated by RF-magnetron sputtering under an $Ar+O_2$ atmosphere. High resolution transmission electron microscopy revealed that the Co-Fe-Al-O films are composed of bcc (Co, Fe) nanograins finer than 5 nm and an Al-O amorphous phase. A very large electrical resistivity of $374{\mu}{\Omega}cm$ was obtained, together with a large uniaxial anisotropy field of 50 Oe, a hard axis coercivity of 1.25 Oe, and a saturation magnetization of 12.9 kG. The actual part of the relative permeability was measured to be 260 at low frequencies and this value was maintained up to 1.3 GHz. The ferromagnetic resonance frequency was 2.24 GHz. The resulting Co-Fe-Al-O nanogranular thin films with a high electrical resistivity and high resonance frequency are considered to be suitable for GHz magnetic device applications.

• 한국재료학회지
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• 제11권9호
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• pp.751-758
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• 2001

Anatase $TiO_2$ thin films as a photocatalyst were prepared by the D.C reactive magnetron sputtering process. The $TiO_2$ thin films were deposited on Si(100) substrates under the various conditions : oxygen partial pressure, working pressure, substrate temperature, D.C power, and deposition time. The morphology of the TiO$_2$ thin films showed an island structure. At early stages of film growth, amorphous phase formed. However, during the further growth, columnar crystalline $TiO_2$grains evolved. The crystallinity of the thin films depended on the oxygen partial pressure, the working pressure and the D.C. powers.