• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.411-414
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• 2009

It has been investigated for the film uniformity and deposition rate of a-C:H films on glass substrate and polymeric materials in the presence of the modulated crossed magnetic field. We used Plasma CVD, i.e, using a crossed electromagnetic field, for uniform depositing thin film. The optimum discharge condition has been discussed for the gas pressure, the magnetic flux density and the distance between substrate and electrodes, As a result, it is found that the optimum discharge conditions are $CH_4$ concentration $CH_4$=10 %, modulated magnetic flux density B=48 Gauss, pressure P=100 mTorr, discharge power supply voltage V=l kV under these experimental conditions. By using these experimental condition, it is possible to prepare the most uniform film extends over about 160 mm of the film width. In this study, we deposited a-C:H thin film on glass substrate, and have a plan that using this condition, study depositing a-C:H thin film on polymeric substrate in next studies.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.198-203
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• 2003

To investigate whether the use of hard magnetic film is available to generate bias magnetic field for a magnetoimpedance sensor, the magnetic properties of SmCo hard magnetic films were investigated as a function of their compositions. The saturation magnetization decreased with Sm content increasing in SmCo films. And, the coercive force increased in the extent of Sm content of 28 at%, but decreased as Sm content increased moreover. The bias field effect of SmCo film to amorphous CoZrNb film was investigated with the magnetization corves, permeabilities, and magnetic domain structures of SmCo/CoZrNb multilayers. The bias field of about 60 Oe was observed in the film with 3 mm ${\times}$ 0.5 mm, which can be constructed as a MI sensor, and this result strongly indicates that the bias field generated from a hard magnetic film is adequate to enhance the sensitivity of a MI sensor with hard/soft magnetic multilayer structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.633-636
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• 1999

In this study, we have fabricated amorphous FeZrBAg thin films with low core losses by using DC magnetron sputtering method. After deposition, rotational field annealing (RFA) method was performed in the dc field of 1.5 kOe. The amorphous FeZrBAg thin films produced by annealing at 35$0^{\circ}C$ was founded to have high permeability of 8680 at 100 MHz, 0.2 mOe, low coercivity of 0.86 Oe high magnetization of 1.5 T and very low core loss of 1.3 W/cc at 1 MHz, 0.IT respectively. Excellent soft magnetic properties in a amorphous FeZrBAg thin films in the present study are presumably the homogeneous formation of very fine bcc $\alpha$-Fe crystalline with the 8.2 nm in an amorphous FeZrBAg thin film matrix.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.10
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• pp.1849-1860
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• 1994

Domain wall dynamics in thin film of amorphous Rare Earth-Transistion Metal alloys were investigated using numerical integration of the Landau-Lifshitz-Gilbert equation. The thin film was divided into a two-dimensional square lattice ($30\times30$) of dipoles. Nearest-neighbor exchange interaction magnetic anisotropy, applied magnetic field, and demagnetiing field of interacting anisotropy, applied magnetic field, and demagnetizing field of interacting dipoles were considered. It was assumed that the film had perfect uniaxial anisotropy in the perpendicular direction and the magnetization reversal existed in the film. The time of domain wall creation and the thickness of the wall were investigated. Also the motion of domain walls under an applied field was considered. Simulation results showed that the time of domain wall creation was decreased significantly and the average velocity of domain wall was increased somewhat when the demagnetizing field was considered.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.261-261
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• 2003

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.197-200
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• 2006

Amorphous alloys of Co-rich magnetic amorphous films are well known as thpical soft magnetic alloys. They are used for many kinds of electric and electronic parts such as magnetic recording heads, transformers and inductors. CoFeHfO thin films were prepared by RF magnetron reactive sputtering. The films were deposited onto Si(100) substrates with a power of 300 W at room temperature. The reactive gas was introduced up to 10% ($O_2$/(Ar + $O_2$)) during deposition, and the $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film exhibit excellent soft magnetic properties : saturation magnetization ($4{\pi}M_s$) of 19kG, magnetic coercivity ($H_c$) of 0.37 Oe, anisotropy field ($H_k$) of 48.62 Oe, and an electrical property is also shown to be as high as 300 ${\mu}{\Omega}cm$. It is assumed that the good soft magnetic properties of $Co_{39}Fe_{34}Hf_{9.5}O_{17.5}$ thin film results from high electrical resistivity and large anisotropy field.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.77-84
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• 1996

Silicon deposition by Penning discharge was carried out using a mixture of 5% $SiH_4/H_2$ and Ar gas, and the effects of the deposition conditions(gas mixing raito, substrate temperature. discharge power etc.) on the growth rate, crystallinity and morphology of the films deposited were investigated. The magnetic field(800 G) confined the plasma in the region between the two cathodes and enhanced the discharge current by a factor of a few hundreds below 1 mTorr. The magnetic field-enhanced plasma density resulted in a very large deposition rate of about 300 $\AA$/min at $SiH_4$ flow rate of 0.7 sccm and the substrate temperature of $800^{\circ}C$. Characterization of the films by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy revealed that an epitaxial film with a smooth surface grows above 80$0^{\circ}C$, an amorphous film below $400^{\circ}C$, and a rough polycrystalline film at intermediate temperatures.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.246.2-246.2
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• 2007

• 연구논문집
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• s.30
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• pp.147-157
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• 2000

The filtered vacuum arc source (FVAS), which is adopted by magnetic filtering methode to remove the macro-particle in vacuum arc plasma, was composed of a torus structure with bending angle of 60 degree. The radius of torus was 266 mm, the radius of plasma duct was 80 mm and the total length was 600 mm. The magnet parts were consisted of one permanent magnet, one magnetic yoke and five solenoid magnets. The plasma duct was electrically isolated from the ground so that a bias voltage could be applied. The baffles inside plasma duct were installed in order to prevent the recoil effect of macro-particles. Graphite was used as the cathode material to coat the amorphic diamond film and its diameter was 80 mm. The amorphic diamond film attracts much attention due to its excellent mechanical, optical and tribological properties suitable for wide range of applications. The effects of solenoid magnet in plasma extraction were studied by computer simulation and experiment using Taguchi's method. The source and extraction magnet affected the arc stabilization. The extraction beam current was maximized with low value of the source magnet current and high value of the filtering magnet current. Optimum deposition condition was obtained when the currents of arc discharge, source, extraction, bending, deflection and outlet magnet were 30 A, 1 A, 3 A, 5 A, and 5 A, respectively.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.524-527
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• 1995

The temperature dependence of spin wave mode separation in amorphous $Co_{89.5}Zr_{10.5}$ thin film has been investigated at temperatures between 100 K and 300 K. The magnetization and the spectroscopic splitting factor were obtained for the main resonance mode in parallel and perpendicular magnetic field. ${\Delta}H_{2-3}$, the difference between resonance field of mode 2 and the resonance field of mode 3, increases with decreasing temperature. The linewidth increases for all the modes with decreasing temperature. Especially in mode 3 it increases rapidly below 200 K. This phenomenon could be caused by the increase of exchange stiffness constant or the decrease of surface magnetic anisotropy constant with decreasing temperature.