• Journal of the Korean Magnetics Society
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• v.7 no.1
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• pp.38-43
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• 1997

For amorphous $Co_{1-x}Ti_x$(X=0.13, 0.16, 0.21 at.%) thin films deposited by DC magnetron sputtering method ferromagnetic resonance experiments have been used to investigate the dependence of surface magnetic properties according to annealing temperature (150~225 $^{\circ}C$). Spin wave resonance spectra for all annealing temperatures consist of several volume modes and one(or two) surface mode. It is suggested that both surfaces of the film have a perpendicular hard axis to the film plane(negative surface anisotropy). Also, the surface anisotropy $K_{s2}$ at substrate film interface is varied slowly from -0.11 to -0.25 erg/ $\textrm{cm}^2$ and the surface anisotropy $K_{s1}$ at film-air interface is varied from 0.16 to -0.53 erg/ $\textrm{cm}^2$ with increasing annealing temperature. We conjecture that the variation of surface anisotropy $K_{s1}$ is due to the increase of Co concentration resulted from Ti oxidation for low temperature annealing(150~200 $^{\circ}C$) and the diffusion of Co atoms near the film surfaces for high temperature annealing(225~250 $^{\circ}C$).

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.237-242
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• 1997

The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at $P_{O2}=10%$ by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, is investigated. Newly developed $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits good soft magnetic properties with $4{\pi}M_s=17.7$ kG, $H_c=0.7$ Oe and ${\mu}_{eff}$(0.5~100MHz)=2,500, respectively. The Fe-Hf-O films are composed of $\alpha$-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally. It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf. It results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity. The $Fe_{82}Hf_{3.4}O_{14.6}$ film exhibits the quality factor (Q=$\mu$'/$\mu$") of 25 at 20 MHz. These good frequency characteristics are considered to be superior to other films already reported.o other films already reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Korean Journal of Optics and Photonics
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• v.34 no.6
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• pp.241-247
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• 2023

We examine the spectral characteristics of laser-induced periodic surface structures (LIPSSs) formed on an amorphous silicon film irradiated by a 355-nm nanosecond laser. A Gaussian beam with a diameter of 196 ㎛ is used to perform a two-dimensional raster scan. The laser's pulse number is varied from 190 to 280, and its intensity is adjusted within 100-130 mJ/cm². LIPSSs with a periodicity of approximately 330 nm form on the surface of the Si film, aligned perpendicular to the laser's polarization. Transmission spectra of the samples show dips around 700 nm for transverse electric polarization and around 500 nm for transverse magnetic polarization. The features are investigated with a one-dimensional-grating model using a rigorous coupled-wave analysis. Simulations confirm that the observed dips are due to the resonant modes, depending on the polarization.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.36-41
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• 2002

Abstract The stoichiometric and double-ordered perovskite $Sr_2FeMoO_6$ (SFMO) polycrystalline ceramics were fabricated by sintering at above $900^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SMO polycrystals showed good ferromagnetic properties andmagnetrotesistqnce ratios of about 15 % at 8K and 3 % at room temperature. Amorphous SFMO thin films were deposited on $LaA1O_3$ and $SrTiO_3$ single crystal substrates using rf sputtering method with the SFMO polycrystalline ceramic target. Double-ordered perovskite polycrystalline SFMO thin films were fabricated by solid state crystallization by annealing the deposited amorphous films at above $680^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SFMO thin films exhibited ferromagnetic behavior. Their magnetroresistance ratios, however, were only 0.3~0.5% at 8K and disappeared with increasing the measuring temperature. This was attributed to the absence of magnetic spin tunneling between grains due to the porous structure and non-stoichiometric composition of the deposited films.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.389-393
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• 2000

Effects of Co addition and heat treatment on the magnetic properties of Fe-Si-B thin films were investigated. The compositions of metalloids, i.e, B and Si, in the alloys were kept 10 at.% each. Heat treatments were carried out in the temperature range from 100 to $300^{\circ}C$ for up to 60 min. Amorphous thin films of FeCoSiB were deposited on the water-cooled substrates by dc magnetron sputtering. The composition of thin films was controlled by placing proper number of pellets of alloying elements and analyzed by ICP, resulting in $Fe_{80-X}Co_ XB_{10}Si_{10}$ (X=8~18 at.%). Saturation magnetization of the alloys increased as Co concentration increased up to 10 at.% and then decreased with further increase of Co concentration. However, coercive force of the films decreased with the increase of Co concentration. Furthermore, the coercive force was also reduced by the annealing due to the residual stress relief.

• Korean Journal of Materials Research
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• v.33 no.10
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• pp.400-405
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• 2023

Tb³⁺-doped CaNb₂O₆ (CaNb₂O₆:Tb³⁺) thin films were deposited on quartz substrates at a growth temperature of 300 ℃ using radio-frequency magnetron sputtering. The deposited thin films were annealed at several annealing temperatures for 20 min and characterized for their structural, morphological, and luminescent properties. The experimental results showed that the annealing temperature had a significant effect on the properties of the CaNb₂O₆:Tb³⁺ thin films. The crystalline structure of the as-grown CaNb₂O₆:Tb³⁺ thin films transformed from amorphous to crystalline after annealing at temperatures greater than or equal to 700 ℃. The emission spectra of the thin films under excitation at 251 nm exhibited a dominant emission band at 546 nm arising from the ⁵D₄→⁷F₅ magnetic dipole transition of Tb³⁺ and three weak emission bands at 489, 586, and 620 nm, respectively. The intensity of the ⁵D₄→⁷F₅ (546 nm) magnetic dipole transition was greater than that of the ⁵D₄→⁷F₆ (489 nm) electrical dipole transition, indicating that the Tb³⁺ ions in the host crystal were located at sites with inversion symmetry. The average transmittance at wavelengths of 370~1,100 nm decreased from 86.8 % at 700 ℃ to 80.5 % at an annealing temperature of 1,000 ℃, and a red shift was observed in the bandgap energy with increasing annealing temperature. These results suggest that the annealing temperature plays a crucial role in developing green light-emitting CaNb₂O₆:Tb³⁺ thin films for application in electroluminescent displays.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.123-132
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• 2000

Cerium substituted YIG thin films were grown by rf magnetron sputter techniques. We investigated the effects of post-deposition heat-treatment as well as various deposition parameters such as substrate materials, substrate temperature. sputter power, and sputter gas types on the crystallinity, chemical composition, microstructure and magnetic characteristics of the films. Post-deposition heat treatment over 750 $\^{C}$ was applied to crystallize as-prepared amorphous films, and a strong tendency of particular crystallographic planes tying parallel to substrate surface was observed for the post-deposition heat-treated films on GGG substrate. The chemical composition of the films exhibited a wide range of chemical stoichiometry depending on the oxygen fraction of sputter gas, and in particular the composition of the film deposited in sputter gas with an oxygen fraction of R = 10% was Ce$\_$0.23/Y$\_$1.30/Fe$\_$3.50/O$\_$12/. With raising the temperature of post-deposition heat-treatment from 900 $\^{C}$ to 1100 $\^{C}$, the surface roughness of the film on GGG substrates increased from about 3 nm to 40 nm, but their coercive force and ferromagnetic resonance line width decreased from 0.477 kA/m to 0.369 kA/m and from 12.5 kA/m to 8.36 kA/m, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.1-188.1
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• 2015

For present investigation Fe/MgO/Fe/Co multilayer stack is grown on Si substrate using e-beam evaporation in ultrahigh vacuum. This stack is irradiated perpendicularly by 120 MeV $Ag^{8+}$ at different fluences ranging from $1{\times}10^{11}$ to $1{\times}10^{13}ions/cm^2$ in high vacuum using 15UD Pelletron Accelerator at Inter University Accelerator Centre, New Delhi. Magnetic measurements carried out on pre and post irradiated stacks show significant changes in the shape of perpendicular hysteresis which is relevant with previous observation of re-orientation of magnetic moment along the direction of ion trajectory. However increase in plane squareness may be due to the modification of interface structure of stacks. X-ray reflectivity measurements show onset of interface roughness and interface mixing. X-ray diffraction measurements carried out using synchrotron radiation shows amorphous nature of MgO and Co layer in the stack. Peak corresponding body centered Fe [JCPDS-06-0696] is observed in X-ray diffraction pattern of pre and post irradiated stacks. Peak broadening shows granular nature of Fe layer. Estimated crystallite size is $22{\pm}1nm$ for pre-irradiated stack. Crystallite size first increases with irradiation then decreases. Structural quality of these stacks was further studied using transmission electron microscopic measurements. Thickness from these measurements are 54, 36, 23, 58 and 3 nm respectively for MgO, Fe, MgO, Fe+Co and Au layers in the stack. These measurements envisage poor crystallinity of different layers. Interfaces are not clear which indicate mixing at interface. With increase fluence mixing and diffusion was increased in the stack. X-ray absorption spectroscopic measurements carried out on these stacks show changes of Fe valence state after irradiation along with change of O(2p)-metal (3d) hybridized state. Valence state change predicts oxide formation at interface which causes enhanced in-plane magnetization.