• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.360-368
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• 2020

Wear resistance of cutting tools is one of the most important requirements in terms of the durability of cutting tool itself as well as the machining accuracy of the workpiece. Generally, tungsten carbide ball end mills have been processed with hard coatings for high durability and wear resistance such as diamond coating and tetrahedral amorphous carbon(ta-C) coating. In this study, we developed multilayer ta-C coatings whose wear resistance is comparable to that of diamond coating. First, we prepared single layer ta-C coatings according to the substrate bias voltage and Ar gas flow, and the surface microstructure, raman characteristics, hardness and wear characteristics were evaluated. Then, considering the hardness and wear resistance of the single layer ta-C, we fabricated multilayer coatings consisting of hard and soft layers. As a result, it was confirmed that the wear resistance of the multilayer ta-C coating with hardness of 51 GPa, and elastic recovery rate of 85% improved to 97% compared to that of the diamond coated ball end mill.

• Composites Research
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• v.36 no.4
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• pp.270-274
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• 2023

The stacking configuration of fiber-reinforced polymer (FRP) composites, achieved via the filament winding process, exhibits distinct variations compared to conventional FRP composite stacking arrangements. Consequently, it becomes challenging to ascertain the influence of mechanical properties based on the typical stacking structures. Thus, it becomes imperative to enhance the mechanical behavior and optimize the interleaved structures to improve overall performance. Therefore, this study aims to investigate the impact of incorporating amorphous halloysite nanotubes (A-HNTs) within different layers of five unique layer arrangements on the low-velocity impact properties of interleaved carbon fiber-reinforced polymer (CFRP) structures. The low-velocity impact characteristics of the laminate were validated using a drop weight impact test, wherein the resulting impact damage modes and extent of damage were compared and evaluated under microscopic analysis. Each interleaved structure laminate according to whether nanoparticles are added was compared at impact energies of 10 J and 15 J. In the case of 10 J, the absorption energy showed a similar tendency in each structure. However, at 15 J, the absorption energy varies from structure to structure. Among them, a structure in which nanoparticles are not added exhibits the highest absorption energy. Additionally, various impact fracture modes were observed in each structure through optical microscopy.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.219.1-219.1
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• 2014

전자소자 산업의 미세화 및 대형화에 따라 플라즈마 밀도, 전위, 온도, 균일도 등 과 같은 플라즈마 특성을 제어하는 것은 차세대 플라즈마 장치 개발에 있어 매우 중요한 요소라고 할 수 있다. 특히, 급격한 소자의 미세화에 따라 플라즈마 공정을 통해 발생할 수 있는 damage는 큰 issue가 되어 왔고, 많은 연구자들은 이를 해결하기 위해서 다각적인 노력을 진행해 왔다. 그중 높은 전자 온도는 높은 전자 에너지에 의해 공정 중 소자를 손상 시키는 주된 원인이라고 보고되고 있으며, 이에 대한 제어기술은 매우 중요하다고 할 수 있다. 본 연구에서는 서로 다른 두 개의 내/외측으로 나뉘어진 나선형 모양의 ICP 안테나를 이용 하여 연구를 진행하였다. 내측의 안테나에는 2 MHz를 연결 하였으며, 외측의 안테나에는 13.56 MHz를 연결 하였으며, 내/외측 안테나에 각각 pulse mode로 입력전력을 인가해 줌으로써 플라즈마의 특성을 관찰하였다. Pulse / CW (Continuous Wave) mode에 있어서 전자온도의 측정을 위해 emissive probe 를 이용하여 plasma potential과 floating potential을 측정하였으며, 이를 통하여 전자온도를 계산하여 구할 수 있었다. Duty ratio 및 pulsing frequency의 변화에 따른 전자온도의 변화를 확인 할 수 있었으며, 그에 따른 플라즈마 균일도를 ion saturation current를 측정함으로써 관찰할 수 있었다. 실제 식각 공정에 있어서 Pulsing 조건에 따른 식각 특성을 관찰하기 위해, SiO2, ACL (Amorphous Carbon Layer)에 대해 식각을 진행하였으며, 식각 메커니즘 분석을 위해 이온에너지 분포의 변화를 PSM (Plasma Sampling Mass-spectroscopy)을 이용하여 측정하였다.

• Journal of the Korea Institute of Military Science and Technology
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• v.6 no.3
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• pp.44-53
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• 2003

Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.44-47
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• 2019

Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with $C_3H_6$ and $N_2$ gas mixture. Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of $sp^2$ and $sp^3$ through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.5
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• pp.237-242
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• 2007

Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

• Journal of the Korean Wood Science and Technology
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• v.46 no.1
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• pp.17-28
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• 2018

In this study, catalytic activation using sulfuric acid lignin (SAL), the condensed solid by-product from saccharification process, with potassium hydroxide at $750^{\circ}C$ for 1 h in order to investigate its potential to nanoporous carbon In this study, catalytic activation using sulfuric acid lignin (SAL), the condensed solid by-product from saccharification process, with potassium hydroxide at $750^{\circ}C$ for 1 h in order to investigate its potential to nanoporous carbon material. Comparison study was also conducted by production of activated carbon from coconut shell (CCNS), Pinus, and Avicel, and each activated carbon was characterized by chemical composition, Raman spectroscopy, SEM analysis, and BET analysis. The amount of solid residue after thermogravimetric analysis of biomass samples at the final temperature of $750^{\circ}C$ was SAL > CCNS > Pinus > Avicel, which was the same as the order of activated carbon yields after catalytic activation. Specifically, SAL-derived activated carbon showed the highest value of carbon content (91.0%) and $I_d/I_g$ peak ratio (4.2), indicating that amorphous large aromatic structure layer was formed with high carbon fixation. In addition, the largest changes was observed in SAL with the maximum BET specific surface area and pore volume of $2341m^2/g$ and $1.270cm^3/g$, respectively. Furthermore, the adsorption test for three kinds of organic pollutants (phenol, 2,4-Dichlorophenoxyacetic acid, and carbofuran) were conducted, and an excellent adsorption capacity more than 90 mg/g for all activated carbon was determined using 100 ppm of the standard solution. Therefore, SAL, a condensed structure, can be used not only as a nanoporous carbon material with high specific surface area but also as a biosorbent applied to a carbon filter for remediation of organic pollutants in future.