• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.491.2-491.2
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• 2014

Generally, silicon heterojunction solar cell has intrinsic and n-type of hydrogenated amorphous silicon (a-Si:H) as passivation layer and BSF layer. In this study, antimony, novel material, deposited on back side of the heterojunction solar cell as passivation and BSF layer to substitute the a-Si:H and the characteristics of the solar cell such electrical properties and optical properties were analyzed. And SIMS analysis was carried out to obtain the depth profile of the BSF layer which was deposited by laser annealing process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.692-696
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• 2005

In an attempt to fabricate all inclusive display systems we are presenting a study on several elements that would be used as building blocks for all-on-board integrated applications on stainless steel foils. These systems would include in the same substrate all or many of the components needed to drive a flat panel OLED display. We are reporting results on both digital and analog circuits on stainless steel foils. Shift registers running at speeds greater than 1.0MHz are shown as well as oscillators operating at over 40MHz. Pixel circuits for driving organic light emitting diodes are presented. The device technology of choice is that based on poly-silicon TFT technology as it has the potential of producing circuits with good performance and considerable cost savings over the established processes on quartz or glass substrates (amorphous Silicon a-Si:H or silicon on Insulator SOI).

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 한국재료학회지
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• 제28권2호
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• pp.124-128
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• 2018

N-type porous silicon (PS) layers and thermally oxidized PS layers have been characterized by various measuring techniques such as photoluminescence (PL), Raman spectroscopy, IR, HRSEM and transmittance measurements. The top surface of PS layer shows a stronger photoluminescence peak than its bottom part, and this is ascribed to the difference in number of fine silicon particles of 2~3 nm in diameter. Observed characteristics of PL spectra are explained in terms of microstructures in the n-type PS layers. Common features for both p-type and n-type PS layers are as follows: the parts which can emit visible photoluminescence are not amorphous, but crystalline, and such parts are composed of nanocrystallites of several nm's whose orientations are slightly different from Si substrate, and such fine silicon particles absorb much hydrogen atoms near the surfaces. Light emission is strongly dependent on such fine silicon particles. Photoluminescence is due to charge carrier confinement in such three dimensional structure (sponge-like structure). Characteristics of visible light emission from n-type PS can be explained in terms of modification of band structure accompanied by bandgap widening and localized levels in bandstructure. It is also shown that hydrogen and oxygen atoms existing on residual silicon parts play an important role on emission stability.

• Current Photovoltaic Research
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• 제1권1호
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• pp.11-16
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• 2013

The current solar cell industry is experiencing a temporary plateau due to a sluggish economy and oversupply. It is expected that the solar industry can see similar growth to that of the recent past by overcoming the current situation, as there is growing demand globally for solar energy. The current situation led to restructuring of the world's solar industry, and domestic firms will need to have competitiveness through strategic approaches and proprietary technology to survive in the global solar market. Crystalline and amorphous silicon based solar cells have led the solar industry and occupied half or more of the market thus far. They will do so in the future PV market as well by playing a pivotal role in the solar industry. In this paper, the current status and prospects of silicon based solar cells, from materials to comprehensive and high efficiency technology that can emerge in the future, are discussed.

• 한국결정성장학회지
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• 제3권1호
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• pp.59-65
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• 1993

저항가열식 고진공증착기를 이용하여 압력센서로 사용될 수 있는 boron이 첨가된 다결정 silicon 박막이 제조되었다. 다결정 silicon 박막은 여러온도에서 quartz 기판위에 증착되었으며, boron은 BN 웨이퍼를 사용하여 확산로에서 doping하였다. $500^{\circ}C$의 기판온도에서 증착된 silicon 박막은 비정질이었으며, $600^{\circ}C$에서 결정을 보이기 시작하였고, $700^{\circ}C$에서 다결정이 되었다. $900^{\circ}C$에서 10분동안 boron을 dopion한 후, 박막의 비저항은 $0.1{\Omega}cm~1.5{\Omega}cm$의 범위에 있었으며, boron 밀도(농도)는 $9.4$\times$10^{15}~2.1$\times${10}^{17}cm^{-3}$이었고, 입자의 크기는 $107{\AA}~191{\AA}$이었다.

• 한국표면공학회지
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• 제56권4호
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• pp.250-258
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• 2023

Ceramic oxide layer was formed on the surface of high silicon aluminum alloy by using PEO (plasma electrolytic oxidation) process. The microstructure of the oxide layer was analyzed using scanning electron microscopy (SEM) and x-ray diffraction patterns (XRD). The high silicon aluminum alloy prior to PEO process consists of Al, Si and Al₂Cu phases in XRD analysis, whereas Al₂Cu phase selectively disappeared after PEO treatment. Considerable decrease of relative intensity in most of peaks in XRD results of the high silicon aluminum alloy treated by PEO process was observed. It may be attributed to the formation of amorphous phases after PEO treatment. The corrosion behavior of the high silicon aluminum alloy treated by PEO process was investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that the high silicon aluminum alloy treated by PEO process shows greater corrosion resistance than that untreated by PEO process.

• 전기전자학회논문지
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• 제22권1호
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• pp.213-215
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• 2018

본 연구에서는 실리콘 기판 위에 DC 스퍼터링 방법을 이용하여 비정질 탄소박막을 제작하고, 흡광특성과 광발열 특성을 조사하였다. 비정질 탄소박막은 1000 nm 파장에서 97%의 흡광도를 보였으며, 백색광이 조사됨에 따라 비정질 탄소박막의 온도는 $21.1^{\circ}C$에서 $24.1^{\circ}C$로 상승하여 약 $3^{\circ}C$의 온도가 증가하였다. 또한, 백색광이 50초 동안 조사되는 동안 비정질 탄소박막에서는 기판에 비해 4배 빠른 온도상승속도로 온도가 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• 전자공학회논문지D
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• 제36D권1호
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• pp.57-62
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• 1999

유리기판 위에 다결정 실리콘 박막 트랜지스터(Thin Film Transistor, TFT)를 형성하기 위해서 램프 Scanning 열처리 장치를 개발하였다. 선형 램프를 Scanning 함으로써 대면적 유리기판에의 적용 가능성을 높였으며 TFT의 채널 부분은 금속 유도 측면 결정화 방법에 의해 결정화 시켰다. 할로겐 램프에 의한 빛은 투명 유리기판은 가열시키지 않고 ,island 행태의 실리콘 박막만을 가열시킬 수 있었다. 실리콘 산화막으로 이루어진 Capping layer를 적용하였고 이때의 성장 속도는 Capping layer가 없는 경우보다 35배 정도로 빠른 MILC 성장 속도를 나타내었다. 할로겐 램프를 약 1.4mm/sec의 속도록 Scanning한 경우 유리기판의 손상 없이 18-27${\mu}m/scan$ 정도의 결정화를 나타내었다. 이와 같이 제작된 다결정 실리콘 박막으로 제작된 TFT는 전자이동도 130$cm^2/V{\cdot}sec$의 우수한 특성을 나타내었다.