• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.125-126
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• 2007

Polycrystalline silicon thin-film-transistors (Poly-Si TFT's) with a amorphous-$Si_xGe_y$ seed layer have been fabricated to improve the performance of TFT. The dependence of crystal structure and electrical characteristics on the the Ge fractions in $Si_xGe_y$ seed layer were investigated. As a result, the increase of grain size and enhancement of electrical characteristics were obtained from the poly-Si TFT's with amorphous-SixGey seed layer.

• Knowledge Management Research
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• v.12 no.1
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• pp.39-52
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• 2011

Many LCD manufacturers continue to develop the technologies of LCD manufacturing processes for the reduction of production cost, power consumption and high-resolution. The LTPS (Low Temperature Polycrystalline Silicon) crystallization technology is important for rearranging the internal structure of liquid crystal grain by adding certain energy to amorphous silicon and turning it into poly-silicon in order to manufacture LCD with better performance. We consider 14 existing technologies of LTPS crystallization in the LCD manufacturing and present an intelligent analysis methodology using patent map and AHP (Analytic Hierarchy Process) analysis for determining an optimal LTPS crystallization technology. By using patent map analysis, we easily understand the development process and mega-trend of LTPS crystallization technologies and their relationship. By using AHP analysis, we evaluate 14 LTPS technologies. Through the use of proposed methodology, we determine the Continuous Wave Laser Lateral Crystallization technology as an optimal one.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.492-492
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• 2014

On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.343-343
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• 2011

저온에서의 Thin Film Transistor (TFT) 혹은 Nonvolatile memory (NVM) 등의 MOS 구조 소자들의 높은 전기적 특성에 관한 연구들이 진행 되면서 mobility와 stability 그리고 구조화의 용이성에 대한 연구가 진행됨에 따라 amorphous silicon의 결정화를 통해 전기적 특성을 향상 시킨 Nanocrystalline silicon (nc-Si)/Microcrystalline silicon (${\mu}c$-Si)에 대한 연구가 관심을 받고 있다. 본 논문에서는 ${\leq}300^{\circ}C$에서 Inductively coupled plasma chemical vapor deposition를 이용한 TFT을 제작하였다. 가스비, 온도, 두께에 따른 결정화 정도를 Raman spectra를 통해 확인한 후 Bottom gate와 Top gate 구조의 TFT를 제작 하고 결정화에 따른 전기적 특성 향상과 그의 덧붙여 플라즈마 처리를 통한 특성 향상을 확인 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.177-180
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• 2002

Microwave has been utilized for low-temperature crystallization of amorphous Si films. Microwave annealing lowered the crystallization temperature and shortened the annealing time. The combination of Ni and microwave applications on a-Si films further enhanced the crystallization. The enhancement was due to both reduced nucleation activation energy and growth activation energy.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1965-1968
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• 2008

The effects of carbon-coated silicon/graphite (Si/Gr.) composite anode on the electrochemical properties were investigated. The nanosized silicon particle shows a good cycling performance with a reasonable value of the first reversible capacity as compared with microsized silicon particle. The carbon-coated silicon/graphite composite powders have been prepared by pyrolysis method under argon/10 wt% propylene gas flow at $700{^{\circ}C}$ for 7 h. Transmission electron microscopy (TEM) analysis indicates that the carbon layer thickness of 5 nm was coated uniformly onto the surface silicon powder. It is confirmed that the insertion of lithium ions change the crystalline silicon phase into the amorphous phase by X-ray diffraction (XRD) analysis. The carbon-coated composite silicon/graphite anode shows excellent cycling performance with a reversible value of 700 mAh/g. The superior electrochemical characteristics are attributed to the enhanced electronic conductivity and low volume change of silicon powder during cycling by carbon coating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.199-199
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• 2008

이 실험은 NVM의 Oxide, Nitride, Oxide nitride층별 blocking, trapping and tunneling 속성에 대해서 밝히고자 한다. gate 전극은 값싸고 전도도가 좋은 알루미늄을 사용한다. 유리기판위에 Silicon nitride층을 20nm로 코팅하고 Silicon dioxide층을 10nm로 코팅한다. 그리고 amorphous Silicon material이 증착된다. Poly Silicon은 Solid Phase Crystallization 방법을 사용하였다. 마지막 공정으로 p-doping은 ion shower에 의한 방법으로 drain과 source 전극을 생성하였다. gate가 biasing 될 때, p-channel은 source와 drain 사이에서 형성된다. Oxide Nitride Oxide nitride (ONO) 층은 각각 12.5nm/20nm/2.3nm의 두께로 만들었다. 전하는 Program process 중에 poly Silicon층에서 Silicon Oxide nitride tunneling층을 통하여 움직이게 된다. 그리고 전하들은 Silicon Nitride층에 머무르게 된다. 그 전하들은 erasing process 중에 trapping 층에서 poly Silicon 층으로 되돌아 간다. Silicon Oxide blocking층은 trapping층으로 전하가 나가는 것을 피하기 위하여 더해진다. 이 논문에서 Programming process와 erasing process의 Id-Vg 특성곡선을 설명한다. Programming process에 positive voltage를 또는 erasing process에 negative voltage를 적용할 때, Id-Vg 특성 곡선은 왼쪽 또는 오른쪽으로 이동한다. 이 실험이 보여준 결과값에 의해서 10년 이상의 저장능력이 있는 메모리를 만들 수 있다. 그러므로, NVM의 중요한 두 가지 성질은 유지성과 내구성이다.

• Journal of Radiation Protection and Research
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• v.24 no.3
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• pp.161-170
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• 1999

System performances in terms of image quality between an amorphous silicon DR system and a conventional film-screen system were evaluated. Various aspects of image quality MTF (modulation transfer function), NPS (noise power spectrum), SNR(signal-to-noise ratio) and contrast were measured and calculated. The MTF of the DR system was comparable to the film-screen systems. The noise was mainly dominated by the quantum mottle in both systems and the electronic noise was found in the DR system. The contrast of the DR system was better than the film-screen systems by virtue of high sensitivity and image processing. Compared to the film-screen systems in general radiography, the DR system had similar resolution and showed better contrast with the same exposure condition after contrast manipulation. The results of this study provide some useful information about the performance of the DR system in connection with medical applications.

• Korean Journal of Digital Imaging in Medicine
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• v.9 no.2
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• pp.23-30
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• 2007

This study attempts to propose an appropriate method of using digital medical imaging equipments, by studying the effects of automatic exposure control(AEC), grid ratio and the change of radiography distance on the patient dose and detertor acquisition dose during the procedure of acquiring image through a digital medical imaging detector. The change of dose following the change of grid ratio's exposure and radiography distance was measured, by using an abdominal phantom organized with tissue equivalent materials in an amorphous silicon thin film transistor detecter installed with AWC. The case to use grid ratio 12 : 1, focal distance 180cm to radiography distance 110cm in AEC, the patient dose increased rather when we used grid ration 10 : 1, focal distance 110cm. When AEC was not used,the dose necessary for image acquisition decreased as the grid ratio became higher and the distance became further. but detector acquisition dose was not reduced when in applied AEC. When purchasing digiral medical imaging equipments, optional items such as AEC and grid shall be accurately selected to satisfy the use of the equipments. Radiography error made by radiation technologist and unnenessary patient dose can be reduced by selecting equipments with a radiography distance marker equipment when it did not apply AEC. These equipments can also be helpful in maintaining high imaging quality, one of the merits of digital detectors.

• 한국태양에너지학회:학술대회논문집
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• 2011.04a
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• pp.17-22
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• 2011

There are some degradation factors for amorphous silicon solar cells. Light inducing is one of the factor that explained by Staebler-Wronski effect. Also, hotspot heating could be the reason that makes amorphous silicon solar cell degrade. Hotspot heating is occurred when a solar cell is shaded so this work is investigated into two types of shading condition and how these affect to solar cell differently. Reduced irradiance for whole cell and partially shaded as 0($W/m^2$) while the other part of cell is soaking as 1000($W/m^2$) of irradiance are two conditions that are experimented. The two types of shading show different characteristics of degradations. The result shows that partially shaded cell dropped maximum powerless and slower. Also sudden drop points have shown that should be concerned to decide the number of cells for a string. Otherwise, the current through a shaded cell might flow more than cell's capability. It makes cell and module damaged. This work would help to manufacture modules.