• Journal of Korean Society for Atmospheric Environment
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• v.34 no.5
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• pp.651-658
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• 2018

Particulate matter (PM) emitted from fossil fuel-combustion facilities can be classified as either filterable or condensable PM. The U.S. Environmental Protection Agency (EPA) defined condensable PM as material that is in the phase of vapor at the stack temperature of the sampling location which condenses, reacts upon cooling and dilution in the ambient air to form solid or liquid in a few second after the discharge from the stack. Condensable PM passed through the filter media and it is typically ignored. But condensable PM was defined as a component of primary PM. This study investigates the change of condensable PM according to the variation in the sulfur dioxide of combustion gas. Domestic oil boilers were used as the source of emission ($SO_2$) and the level of $SO_2$ concentration (0, 50, 80, and 120 ppm) was adjusted by diluting general light oil and marine gas oil (MGO) that contains sulfur less than 0.5%. Condensable PM was measured as 2.72, 6.10, 8.38, and $13.34mg/m^3$ when $SO_2$ concentration in combustion gas were 0, 50, 80, and 120 ppm respectively. The condensable PM tended to increase as the concentration of $SO_2$ increased. Some of the gaseous air pollutants emitted from the stack should be considered precursors of condensable PM. The gas phase pollutants which converted into condensable PM should reduced for condensable PM control.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.301-311
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• 2012

Discharge property of plasma jet devices is investigated for the application to the doping processes of crystalline solar cells and others. Current-voltage characteristics are shown as the typical normal-glow discharge in the various gas pressure of plasma jets, such as in the atmospheric plasma jets of Ar-discharge, in the ambient pressure of atmospheric discharge, and in the ambient Ar-pressure of Ar-discharge. The discharge voltage of atmospheric plasma jet is required as low as about 2.5 kV while the operation voltage of low pressure below 200 Torr is low as about 1 kV in the discharge of atmospheric and Ar plasma jets. With a single channel plasma jet, the irradiated plasma current on the doped silicon wafer is obtained high as the range of 10~50 mA. The temperature increasement of wafer is normally about $200^{\circ}C$. In the result of silicon wafers doped by phosphoric acid with irradiating the plasma jets, the doping profiles of phosphorus atoms shows the possibility of plasma jet doping on solar cells.

• Asian-Australasian Journal of Animal Sciences
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• v.27 no.8
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• pp.1211-1218
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• 2014

Higher concentrations of ammonia ($NH_3$) and carbon dioxide ($CO_2$) in animal barns can negatively affect production and health of animals and workers. This paper focuses on measurements of summer concentrations of ammonia ($NH_3$) and carbon dioxide ($CO_2$) in a naturally ventilated laying henhouse located at an egg production facility in Bursa region, western Turkey. Also, indoor and ambient environmental conditions such as temperature and relative humidity were measured simultaneously with pollutant gas concentrations. The average $NH_3$ concentrations during summer of 2013 was 8.05 ppm for exhaust and 5.42 ppm for inlet while average $CO_2$ concentration was 732 ppm for exhaust and 625 ppm for inlet throughout summer. The overall minimum, average and maximum values and humidity were obtained as $16.8^{\circ}C$, $24.72^{\circ}C$, and $34.71^{\circ}C$ for indoor temperature and 33.64%, 63.71%, and 86.18% for relative humidity. The lowest exhaust concentrations for $NH_3$ and $CO_2$ were 6.98 ppm and 609 ppm, respectively. They were measured in early morning at the maximum diurnal ventilation rate in July 2013 and August 2013. The highest concentrations were 10.58 ppm for $NH_3$ and 904 ppm for $CO_2$ recorded in the afternoon when the ventilation rate was the lowest in June 2013.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.16-21
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• 2002

Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below $1000^{\circ}C$ using ultraclean $Si_2H_6$ and $H_2$ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~$710^{\circ}C$ and an incubation period of Si deposition only on $SiO_2$ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by $O_2$addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structure of the Si films was evaluated XRD.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1323-1328
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• 1988

Thermally grown $SiO_2$ films on silicon have been thermally nitrided in the $NH_3$ gas ambient and their properties have been investigated by analyzing the AES data and the results of the I-V and the C-V measurements. The Auger depth profile show that the nitrogen-rich layers are formed at the nitrided oxide film surface and near the $SiO_2$-Si interface. The higher the nitridation temperature is, the larger the refractive index of nitroxide film is. And the thinner the oxide film to be nitrided for the same nitridation temperature is, the larger the refractive index of nitroxide film is. When thin $SiO_2$ film is thermally nitrided, the I-V characteristics show the Fowler-Nordheim conduction fashion. Flatband voltages of $SiO_2$ films are shifted by nitridation, due to the fixed charge formation.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.92-95
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• 2011

In manufacturing optical fibers, the process starts with the glass fiber drawing from the heated and softened silica preform in the furnace, and the freshly drawn glass fiber is still at high temperature when it leaves the glass fiber drawing furnace. It is necessary to cool down the glass fiber to the ambient temperature before it then enters the fiber coating applicator, since the hot glass fiber is known to cause several technical difficulties in achieving high quality fiber coating. As the fiber drawing speed keeps increasing, a current manufacturing of optical fibers requires a dedicated cooling unit with helium gas injection. A series of three-dimensional flow and heat transfer computations are carried out to investigate the effectiveness of fiber cooling in the fiber cooling unit. The glass fiber cooling unit is simplified into the long cylindrical enclosure at which the hot glass fiber passes through at high speed, and the helium is being supplied through several injection slots of rectangular shape along the cooling unit. This study presents and discusses the effects of helium injection rates on the glass fiber cooling rates.

• Journal of Magnetics
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• v.22 no.1
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• pp.69-77
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• 2017

To empower safe, economical and eco-friendly sustainable solution for enhancing oil and gas productivity from deep water reservoirs, new downhole technologies are recommended. Since electric machine plays leading role in the downhole application, it is a squeezing requirement for researchers to design and develop advanced electric machine. The Recent improvement in technology and uses of high-temperature magnets, permanent magnet flux switching machine (PMFSM) has become one of the appropriate contenders for offshore drilling but fewer designed for downhole due to ambient temperature. Therefore this comprehensive study deals with the design optimization and performance analysis of outer rotor PMFSM for the downhole application. Preliminary, the basic design parameters needed for machine design are calculated mathematically. Then the design refinement technique is implemented through deterministic method. Finally, initial and optimized performance of the machine is compared and as a result the output torque is increase from 16.39 Nm to 33.57 Nm while diminishing the cogging torque and PM weight up to 1.77 Nm and 0.79 kg, respectively. Therefore, it is concluded that purposed optimized design is suitable for the downhole application.

• Journal of Surface Science and Engineering
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• v.50 no.2
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• pp.114-118
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• 2017

Bismuth telluride ($Bi_2Te_3$) and its alloys are well-known thermoelectric materials for ambient temperature applications. In this study, the dissolved Bi-Te precursor solution was used to synthesis metallic $Bi_2Te_3$ powder via ultrasonic spray pyrolysis and reduction process. The droplets of the Bi-Te precursor solution were decomposed to Bi-Te oxide powders by ultrasonic spray pyrolysis. The spherical $Bi_2Te_3$ powders were synthesized by reduction reaction in atmosphere of hydrogen gas at the temperature above $375^{\circ}C$ for 6h. The reduced $Bi_2Te_3$ powders have a mean particle size of $1.5{\mu}m$. The crystal structure of the powder was evaluated by X-Ray diffraction(XRD), and the microstructure with size and shape powders was observed by fieldemission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.