• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• 한국식품과학회지
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• 제34권6호
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• pp.1036-1042
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• 2002

'남고' 품종의 국내산 청매실을 $30\;{\mu}m$ 두께의 LDPE 필름 봉투에 넣고 탄산가스 흡착제로서 $Ca(OH)_2$, 에틸렌 흡착제로서 $KMnO_4$와 이들의 혼합 가스흡착제를 첨가하여 밀봉한 후 $25^{\circ}C$에 저장하면서 일반성분 및 호흡특성 변화를 관찰하였다. 저장중 적정 산도와 가용성 고형분은 감소하고 pH는 증가하여 숙성중 변화와 반대되는 경향을 보였으며, 청매실의 황화와 과육 연화에 의한 품질저하는 에틸렌 흡착제를 사용함으로써 현저히 억제되어 상온에서도 10일간 선도유지 효과를 확인할 수 있었다. 또한 에틸렌 흡착제를 첨가한 경우는 상온저장 10일 후에도 생리장해가 거의 발생되지 않았으며 호흡률의 변화도 거의 관찰되지 않았다. 청매실을 상온 유동할 때 적정 투과성의 플라스틱 필름에 밀봉포장하고 일정량의 에틸렌 흡착제를 사용함으로써 포장내부의 기체조성을 $CO_2$ 농도 7-8%, $O_2$ 농도 2-3%로 유지할 경우 안정적인 호흡패턴으로 생리적 장해를 억제하여 청매실의 신선도를 유지하는데 뚜렷한 효과가 있음을 확인할 수 있었다.

• 센서학회지
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• 제1권2호
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• pp.173-181
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• 1992

RP 반응성 스펏터링으로서 P형 실리콘 웨이퍼위에 $Ta_{2}O_{5}$막을 제조하였다. 시편의 구조 및 조성은 XRD와 AES로 조사하였다. 산소의 혼합비가 10%일 때 C-V 특성으로부터 구한 $Ta_{2}O_{5}$막의 비유전률은 10-12이었다. AES와 RBS로 측정한 $Ta_{2}O_{5}$막의 Ta : O의 비는 각각 1 : 2와 1 : 2.49로 나타났으며, 산소분위기에서 $700^{\circ}C$의 열처리 온도에서 결정성장이 시작되었다. 산소분위기에서 $1000^{\circ}C$로 열처리한 $Ta_{2}O_{5}$막의 비유전률값은 20.5였으며, 질소분위기에서 열처리한 경우의 비유전률값은 23으로 나타났다. 이 때 가육방전계(pseudo hexagonal ${\delta}-Ta_{2}O_{5}$)의 결정구조를 나타내었다. 시편의 ${\Delta}V_{FB}$와 누설전류밀도는 산소의 혼합비가 증가함에 따라 감소하였다. 그리고 최대절연파괴전장은 산소가 10% 혼합되었을 때 2.4MV/cm로 나타났다. 이러한 $Ta_{2}O_{5}$막은 수소이온 감지막 및 기억용소자의 게이트 절연막 등에 응용될 수 있을 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.1-33
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• 2000

Silicon carbide ceramics with sintering additives from the system AlN-Y$_2$O$_3$ can be gas-pressure sintered to theoretical density. While commonly a combination of sesquioxides is used such as Al$_2$O$_3$-Y$_2$O$_3$, the oxynitrid additives offer the advantage that only a nitrogen atmosphere is require instead of a powder. By starting form a mixture of ${\beta}$-SiC and ${\alpha}$-SiC, and by performing dedicated heat treatments after densification, anisotropic grain growth is obtained which leads to a platelet microstructure showing enhance fracture toughness. In the present work, recent improvement of the mechanical behaviour of these materials at ambient and high temperatures is reported. By means of a surface oxidation treatment in air it is possible to obtain four-point bending strengths in excess of 1 GPa, and the strength retention at high temperatures is significantly improved.

• 천문학회지
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• 제49권3호
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• pp.109-122
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• 2016

[Fe II] emission lines are prominent in the infrared (IR) and important as diagnostic tools for radiative atomic shocks. We investigate the emission characteristics of [Fe II] lines using a shock code developed by Raymond (1979) with updated atomic parameters. We first review general characteristics of the IR [Fe II] emission lines from shocked gas, and derive their fluxes as a function of shock speed and ambient density. We have compiled available IR [Fe II] line observations of interstellar shocks and compare them to the ratios predicted from our model. The sample includes both young and old supernova remnants in the Galaxy and the Large Magellanic Cloud and several Herbig-Haro objects. We find that the observed ratios of the IR [Fe II] lines generally fall on our grid of shock models, but the ratios of some mid-IR lines, e.g., [Fe II] 35.35 µm/[Fe II] 25.99 µm, [Fe II] 5.340 µm/[Fe II] 25.99 µm, and [Fe II] 5.340 µm/[Fe II] 17.94 µm, are significantly offset from our model grid. We discuss possible explanations and conclude that while uncertainties in the shock modeling and the observations certainly exist, the uncertainty in atomic rates appears to be the major source of discrepancy.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2009년도 하계학술발표대회 논문집
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• pp.1312-1316
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• 2009

Growing interest in $CO_2$ capturing from industrial processes and storage in underground formations is emerging from commitments in reducing $CO_2$ emissions manifested in the Kyoto Protocol. In this paper, $CO_2$ liquefaction system is treated in focus of liquefaction efficiency & production rate. Presently $CO_2$ is transported in ships or trucks at a pressure of 14-20 bar. Considering this, the liquefaction pressures of 20, 15, 6.5 bar are selected. Compressor work and cooling capacity are calculated and compared. In order to investigate the effect of intercooling, the compressed gas after compressor work is cooled by ambient air or seawater. In case of applying the intercooling to the system, consuming energy can be saved larger than 20%. In the lower liquefaction pressure, the more $CO_2$ can be obtained due to higher density. In the liquefaction pressure of 6.5 bar, its $CO_2$ production is about 35% higher than that of the system with the liquefaction pressure, 20 bar.

• 한국재료학회지
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• 제23권12호
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• pp.737-744
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• 2013

We demonstrated size control of Au nanoparticles by heat treatment and their use as a catalyst for single-walled carbon nanotube (SWNTs) growth with narrow size distribution. We used uniformly sized Au nanoparticles from commercial Au colloid, and intentionally decreased their size through heat treatment at 800 oC under atmospheric Ar ambient. ST-cut quartz wafers were used as growth substrates to achieve parallel alignment of the SWNTs and to investigate the size relationship between Au nanoparticles and SWNTs. After the SWNTs were grown via chemical vapor deposition using methane gas, it was found that a high degree of horizontal alignment can be obtained when the particle density is low enough to produce individual SWNTs. The diameter of the Au nanoparticles gradually decreased from 3.8 to 2.9 nm, and the mean diameter of the SWNTs also changed from 1.6 to 1.2 nm for without and 60 min heat treatment, respectively. Raman results reconfirmed that the prolonged heat treatment of nanoparticles yields thinner tubes with narrower size distribution. This work demonstrated that heat treatment can be a straightforward and reliable method to control the size of catalytic nanoparticles and SWNT diameter.

• 천문학회지
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• 제34권4호
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• pp.329-331
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• 2001

We investigate the morphology of Active Galactic Nuclei(AGN) jets. AGN jets propagate over kpc $\~$ Mpc and their beam velocities are close to the speed of light. The reason why many jets propagate over so long a distance and sustain a very collimated structure is not well understood. It is argued that some dimensionless parameters, the density and the pressure ratio of the jet beam and the ambient gas, the Mach number of the beam, and relative speed of the beam compared to the speed of light, are very useful to understand the morphology of jets namely, bow shocks, cocoons, nodes etc. The role of each parameters has been studied by numerical simulations. But more research is necessary to understand it systematically. We have developed 2D relativistic hydrodynamic code to analyze relativistic jets. We pay attention to the propagation velocity which is derived from 1D momentum balance in the frame of the working surface. We show some of our models and discuss the dependence of the morphology of jets on the parameter.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.