• Title/Summary/Keyword: Ambient gas density

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Optical Long-slit Spectroscopy of Parsec-scale Jets

  • Oh, Heeyoung;Pyo, Tae-Soo;Yuk, In-Soo;Kim, Kang-Min;Lee, Sungho;Park, Byeong-Gon
    • The Bulletin of The Korean Astronomical Society
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    • v.38 no.1
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    • pp.55.2-55.2
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    • 2013
  • We present the observational study of parsec-scale jets from YSOs reaching lengths of several arc-minutes. The medium-resolution spectroscopic data were obtained between 6000 - $7000{\AA}$ with BOAO long-slit spectrograph. By performing multi-position observation, we investigated the physical variation of the jets and the ambient gas along the whole path of the jets. The flux, electron density, ionization fraction, and electron temperature are discussed with the estimated line ratios between from [OI], [NII], $H{\alpha}$ and [SII] emission lines. This study carried out with more than 8 jets of YSOs including low- to intermediate-mass stars. We also briefly discuss the kinematics of the outflows using spatial and spectroscopic data.

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THIN SHELL FORMATION TIME AND [OIII] LINE IN FAST WIND BUBBLE (빠른 항성풍 거품의 구각형성 시각과 [OIII]선의 형성)

  • Choi, Seung-Eon;Lee, Yeong-Jin
    • Publications of The Korean Astronomical Society
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    • v.11 no.1
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    • pp.91-107
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    • 1996
  • We determine analytically the onset of thin-shell formation time of fast wind bubble with power-law energy injection $E_{in}=E_0t^s$, and power-law ambient density structure, ${\rho}_0(r)={\bar{\rho}}(r/{\bar{r}})^{-{\omega}}$. Thin-shell formation time, $t_{sf}$ can be estimated by minimizing the total time elapsed before the complete cooling of shocked gas. For uniform medium (${\omega}=0$) and constant energy injection (s = 1), the onset of shell formation is found to be at $t_{sf}=5.2{\times}10^3yr$, which agrees Quite well with the results of FCT 1D numerical calculation. We solve the line transfer problem with previous result derived by numerical calculation in order to calculate line profile of [OIII] (${\lambda}=5007{\AA}$) forbidden line. In general, radiative outer shell causes the formation of double peaked line profile. Each peak corresponds to approaching and receeding shells with large velocities. Our line profiles show good agreements with observation of expanding shell structure.

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Batch-type fabrication process of YBCO coated conductor using oxide-precursor-based MOD method (산화물 전구체 기반의 MOD방법을 이용한 YBCO 고온초전도 선재의 batch-type 제조 공정)

  • Chung Kook-chae;Yoo Jai-moo;Ko Jae-Woong;Kim Young-Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.7 no.3
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    • pp.9-12
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    • 2005
  • [ $Y_1Ba_2Cu_3O_{7-8}$ ] (YBCO) coated conductor has been fabricated by batch-type process using oxide-precursor-based metal-organic deposition (MOD) method. The batch-type process can be scaled up more simply to Produce long-length YBCO conductor than the reel-to-reel process. Also, it has less handling problems and is adequate to the ambient gas environment. In this work, YBCO oride powder was used as a starting precursor for MOD method. After reel-to-reel dip coating process, me ter-long-buffered metal tape was wound around a cylinder and underwent calcination and annealing processes. Annealed YBCO films showed good c-axis alignment and dense surface morphology with no cracks, but exhibited very low critical current density of $10^5\;A/cm^2$.

N$_2$ Plasma Treatment Effects of Silicon Nitride Insulator Layer for Thin Film Transistor Applications

  • Ko, Jae-Kyung;Park, Yong-Seob;Park, Joong-Hyun;Kim, Do-Young;Yi, Jun-Sin;Chakrabarty, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.563-566
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    • 2002
  • We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

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Study of Spray Droplet/Wall Interaction (분무액적과 벽의 상호작용에 대한 연구)

  • 양희천;유홍선;정연태
    • Transactions of the Korean Society of Automotive Engineers
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    • v.6 no.4
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    • pp.86-100
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    • 1998
  • The impingement of the fuel spray on the wall within the combustion chamber in compact high-pressure injection engines and on the intake port wall in port-fuel-inje- ction type engines is unavoidable. It is important to understand the characteristics of impinging spray because it influences on the rate of fuel evaporation and droplet distrib- ution etc. In this study, the numerical study for the characteristics of spray/wall interaction is performed to test the applicability and reliability of spray/wall impingement models. The impingement models used are stick model, reflect model, jet model and Watkins and Park's model. The head of wall-jet eminating radilly outward from the spray impingement site contains a vortex. Small droplets are deflected away from the wall by the stagnation flow field and the gas wall-jet flow. While the larger droplets with correspondingly higher momentum are impinged on the wall surface and them are moved along the wall and are rolled up by wall-jet vortex. Using the Watkins and Park's model the predicted results show the most reasonable trend. The rate of increase of spread and the height of the developing wall-spray is predicted to decrease with increased ambient pressure(gas density).

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Electron emission stability from CNTs with various densities (탄소나노튜브 밀도의 변화에 따른 전자방출 안정성 연구)

  • Lim Sung Hoon;Yun Hyun Sik;Ryu Je Hwang;Moon Jong Hyun;Park Kyu Chang;Jang Jin;Moon Byeong Yeon
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.258-262
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    • 2005
  • We report on the field emission properties from vertically aligned carbon nanotubes (CNTs) produced by a triode PECVD with a SiNx capping layer on metal catalyst. It is found that the CNTs density can be controlled by the capping layer thickness and decreases with increasing SiNx thickness. The CNT density of $\~$ 104/$cm^{2}$ exhibited highest electron emission characteristics, the threshold field of 1.2 V/$\mu$m and the current density of 0.17 mA/$cm^{2}$ at 3.6 V/$\mu$m. We have carried out investigation of electron emission stability under ambient gas of N2. The electron emission stability was improved with decreasing CNT density. Under $1\times$$10^{-5}$ Torr ambient pressure, the CNTs in 5 $\mu$m hole show electron emission current higher than $1\times$$10^{-4}$ A/cm2 and it's electron emission uniformity has $2\%$.

Analysis of characteristics of discharge in liquid

  • Kim, Ju-Sung;Min, Boo-Ki;Hong, Young-June;Kang, Seong-Oun;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.209.2-209.2
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    • 2016
  • Up to now, Plasma applications are thought as a leading technology in industrial, chemical and even medical and biological field. Especially, Due to direct discharge in liquid with reaction in ambient solution, plasma in liquid is useful plasma technology. Such as electro-surgery, water purification, radical generation for synthesis. For using those plasma applications efficiently, plasma characteristics should be understood in advance. But discharge in liquid is not much well-known about its characteristics. And plasma discharge in solution is difficult to generate and analysis due to electrolysis, vaporization and radical generation. So, We make stable plasma discharge in solution(saline 0.9%) without input gas. We also analyze new type of plasma source in thermal and electrochemical view. And we check characteristics of plasma in liquid. For example, plasma density and radical density(OH) with optical emission, thermal energy with thermometer, electrical energy with oscilloscope and so on. And we try to explain the bubble and plasma formation with circuit analysis.

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A Mechanism Study on Formation and Reduction of Residual Li of High Nickel Cathode for Lithium-ion Batteries (층상계 하이니켈 양극재의 잔류 리튬 생성 및 저감 메커니즘 연구)

  • MinWook, Pin;Beom Tak, Na;Tae Eun, Hong;Youngjin, Kim
    • Journal of Industrial Technology
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    • v.42 no.1
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    • pp.7-12
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    • 2022
  • High nickel layered oxide cathodes are gaining increasing attention for lithium-ion batteries due to their higher energy density and lower cost compared to LiCoO2. However, they suffer from the formation of residual lithium on the surface in the form of LiOH and Li2CO3 on exposure to ambient air. The residual lithium causes notorious issues, such as slurry gelation during electrode preparation and gas evolution during cell cycling. In this review, we investigate the residual lithium issues through its impact on cathode slurry instability based on deformed polyvinylidene fluoride (PVdF) as well as its formation and reduction mechanism in terms of inherently off-stoichiometric synthesis of high nickel cathodes. Additionally, new analysis method with anhydrous methanol was introduced to exclude Li+/H+ exchange effect during sample preparation with distilled water. We hope that this review would contribute to encouraging the academic efforts to consider practical aspects and mitigation in global high-energy-density lithium-ion battery manufacturers.

Electrical and Optical Characteristics of IZO Thin Films Deposited in Different Oxygen Flow Rate (산소 유량에 따른 IZO 박막의 전기적 및 광학적 특성)

  • Kwon, Su-Kyeong;Lee, Kyu-Mann
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.4
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    • pp.49-54
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    • 2013
  • In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

Dependence of the Formation of $TiO_{2\pm}{\delta}$ Films on Plasma Process Variables (플라즈마 공정 변수가 $TiO_{2\pm}{\delta}$ 박막 형성에 미치는 영향)

  • Park, Sang-Gi;Gang, Bong-Ju;Lee, Won-Hui;Lee, Jae-Gap
    • Korean Journal of Materials Research
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    • v.10 no.11
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    • pp.732-737
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    • 2000
  • Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

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