• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.95-102
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• 2001

Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

• Journal of ILASS-Korea
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• v.6 no.1
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• pp.25-34
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• 2001

Several efforts to meet the exhaust gas regulation have been undertaken by many researchers in recent years. Main researches are on development of design techniques of intake port and combustion chamber, atomisation of fuel and precise control of air-fuel ratio, post-treatment of exhaust gas and so on. Engine technology is changed from PFI to GDI to correspond with exhaust gas regulation. GDI technique makes it possible to preserve lean air-fuel ratio and control accurate air-fuel ratio. Nevertheless, It is not cleared that information of spray characteristics and atomization process are very dependent on fluctuation of pressure and change of temperature in intake stroke. In this study, a constant volume combustion chamber is manufactured to investigate various fluctuations of in-cylinder pressure for injection duration. It is taken photographs of injection process of conventional GDI injector using PMAS. Then, it was verified experimently that ambient conditions as temperature and pressure of combustion chamber have effects on process of spray growth and atomization of fuel.

• Transactions of the Korean Society of Automotive Engineers
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• v.2 no.6
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• pp.102-109
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• 1994

As a fundamental study to apply high pressure injection system to direct injection diesel engine, fuel injection system and constant volume combustion chamber were made and the behaviors of evaporating spray with the variation of injection pressure and the ambient gas temperature were observed by using high speed camera, and the combusion characteristics with the variation of injection pressure and A/F ratio were analyzed. As injection pressure increases, spray tip penetration and spray angle increase and, as a results spray volume increases. This helps an uniform mixing of fuel and air. Spray liquid core length decreases as ambient gas temperature increases, while it decreases as injection pressure increases but the effect of ambient gas temperature is dorminant. As injection pressure increases, ignition delay is shortened and combustion rate being raised, maximum heat release rate increases. It become clear that High injection pressure has high level of potential to improve the performance of DI-diesel engine.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.5
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• pp.438-443
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• 2004

The objective of this paper is to study the effects of the input gas flow rate and the ambient temperature variation on the absorption cycle performance. An air-cooled NH$_3$-$H_2O$ absorption chiller is tested in the present study. The nominal cooling capacity of the single effect maching is 17.6 ㎾ (5.0 USRT). The cooling capacity, coefficient of performance, burner efficiency, and each state point are measured with the variations of the heat input and the ambient temperature. It is found that the COP and cooling capacity increase with increasing the generator exit temperature up to a certain temperature and then decrease. It is also found that the COP and the cooling capacity decrease with increasing the ambient temperature. The maximum COP of 0.51 is obtained from the present experiment.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.1004-1010
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• 1990

SnO2-ThO2-PdCl2-In2O3 gas sensing ceramic systems were studied in order to lowr the operating temperatures and reduce the dependence of ambient temperatures and humidities. Sensing materials were coated by brush on the alumina tube followed by the impregnation of solidfier(ethylsilicate). Coated species were dried and sintered at 75$0^{\circ}C$ for 30min. carbon monoxide gas detecting sensitiviteis were measured in various ambinet temperatures and humidities. In the composition of 94SnO2-5ThO2-PdCl2 system carbon monoxide gas detecting sensors showed the highest detecting sensitivities and the lowest operating temperature(15$0^{\circ}C$). As the ambient temperatures and humidities were increased, sensitivities were decreased. Because the oscillation effects were observed at high humidities, it was suggested that the sensitivities of sensors depend greatly on the humidities.

• Journal of Mechanical Science and Technology
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• v.19 no.4
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• pp.1027-1035
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• 2005

Thermophoresis in dense gases is studied by using a multi-scale approach and Born- Yvon­Green (BYG) equation. The problem of a particle movement in an ambient dense gas under temperature gradient is divided into inter and outer ones. The pressure gradient in the inner region is obtained from the solutions of BYG equation. The velocity profile is derived from the conservation equations and calculated using the pressure gradient, which provides the particle velocity in the outer problem. It is shown that the temperature gradient applied to the quiescent ambient gas induces some pressure gradient and thus flow tangential to the particle surface in the interfacial region. The mechanism that induces the flow may be the dominant source of the thermophretic particle movement in dense gases. It is also shown that the particle velocity has a nonlinear relationship with the applied temperature gradient and decreases with increasing temperature.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.168-172
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• 2017

A nondispersive infrared (NDIR) ethanol gas sensor was prototyped with ASIC implemented thermopile sensor, which included a temperature sensor and two ellipsoidal waveguide structures. The temperature dependency of the two ethanol sensors (with partially blocked and intact structures) has been characterized. The two ethanol gas sensors showed linear output voltages initially when varying the ambient temperature from 253 K to 333 K. The slope of the temperature sensor presented a constant value of 15 mV/K. After temperature compensation, the ethanol gas sensor estimated ethanol concentrations with larger errors of 20 to 25% below 200 ppm. However, the estimation errors were reduced to between -10 and +1 % from 253 K to 333 K above 200 ppm ethanol gas concentration in this research.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.125.2-125.2
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• 2015

The evolution of oxidation states of vanadium is monitored with ambient pressure X-ray photoemission spectroscopy. As the pressure of oxygen gas and surface temperature change, the formations of various oxidation states of vanadium are observed on the surface. Under 100mTorr of the oxygen gas pressure and 523K of sample temperature, VO2 and V2O5 are formed on the surface. The temperature-dependent resistance measurement on grown sample shows a clear metal-insulator transition near 350K. In addition, the measurement of Raman spectroscopy displays the structural change from monoclinic to rutile structures across the phase transition temperature.

• Journal of Sensor Science and Technology
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• v.26 no.3
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• pp.179-185
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• 2017

This article describes the characteristics of nondispersive infrared carbon dioxide gas sensor according to the temperatures and humidifies. In this researches, a thermopile sensor that included application-specific integrated circuit (ASIC) was used and the White-cell structure was implemented as an optical waveguide. The developed sensor modules were installed in gas chamber and then the temperature of gas chamber has been increased from 283 K to 313 K with 10K temperature step. In order to analyze the effects of humidity levels, the relative humidity levels were changed from 30 to 80%R.H. with small humidifier. Then, the characteristics of sensor modules were acquired with the increment of carbon dioxide concentrations from 0 to 2,000 ppm. When the initial voltages of sensors were compared before and after humidifying the chamber at constant temperature, the decrements of the output voltages of sensors are like these: 9mV (reference infrared sensor), 41 mV (carbon dioxide sensor), 2 mV (temperature sensor). With the increment of ambient temperature, the averaged output voltage of carbon dioxide sensor was increased 19 mV, however, when the humidity level was increased, it was decreased 14mV. Based upon the experimental results, the humidity effect could be alleviated by the increment of temperature, so the effects of humidity and temperature could be only compensated by the ambient temperature itself. The estimated carbon dioxide concentrations showed 10% large errors below 200 ppm, however, the errors of the estimations of carbon dioxide concentrations were less than ${\pm}5%$ from 400 to 2,000 ppm.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.116-121
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• 2007

TiNi shape memory alloy(SMA) was fabricated by PLD(plused laser deposition) using equiatomic TiNi target. Composition and crystallization of TiNi thin films which were fabricated in ambient Ar gas(200m Torr)and vacuum($5{\times}10^{-6}\;Torr$) were investigated. Composition of TiNi thin films was characterized by energy-dispersive X-ray spectrometry (EDXS) and crystallization was confirmed by X-ray diffraction (XRD). The composition of films depends on the distance between target and substrate but does not sensitively depend on the substrate temperature. It is found that the composition of films can be easily controlled when substrate is placed inside plume in ambient Ar gas. It is also found that the in situ crystallization temperature ($ca.\;400^{\circ}C$) in ambient Ar gas is lowered in comparison with that of TiNi film prepared under vacuum. The low crystallization temperature in ambient Ar gas makes it possible to prepare the crystalline TiNi thin film without contamination.