• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.231-237
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• 2014

In this paper, we have proceeded research for failures of semiconductor device stressed by Pressure Cooker Test(PCT). After PCT stress, we found various failures such as delamination between aluminium line and device layers and chemical composition transition of aluminium. We have executed the analysis using the physical and chemical observation equipments. There were the main failures that aluminium loss of aluminium pad is occurred and $Al_xO_y$($Al_2O_3$ or $Al(OH)_3$)) layer is formed abnormally. The primary cause of the failures is reaction of supplied fluorine or chlorine gases and infiltrated moisture during etching process.