• 한국표면공학회지
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• 제53권5호
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• 대한기계학회논문집A
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• 제39권12호
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• pp.1245-1249
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• 2015

본 연구에서는 나노스케일 박막의 표면주름 형성에 의한 산란반사도 향상을 평가하였다. 실리콘 기판 위에 120 nm 두께의 Poly(methyl metacrylate) 층을 스핀코팅(spin-coating)한 후, 20 nm 의 알루미늄 박막을 증착하여 시편을 제작하였다. 이를 오븐에서 $95^{\circ}C$의 온도로 2 시간 동안 풀림처리하여 표면주름을 형성하였다. 분광광도계로 가시광선 영역의 산란반사도를 측정한 결과 400 nm 파장에서 40%의 증가를 보였으며, 표면주름 위에 100 nm 의 은박막을 추가적으로 증착한 경우 산란반사도가 50%까지 향상되는 것을 확인하였다. 본 연구는 산란반사도의 증대를 요구하는 박막형 소자에 표면주름을 활할 수 있음을 제시한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.313-316
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• 1998

Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

• 한국표면공학회지
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• 제57권5호
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• pp.379-385
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• 2024

Al-Ag thin films with varying compositions were fabricated using a combinatorial sputtering system to develop highly sensitive SAW devices. The Al-Ag sample library exhibited a wide range of electrical resistivity and chemical compositions, providing valuable data for selecting optimal materials. Recognizing the significant influence of both resistivity and density of IDT electrodes on the generation of acoustic waves from piezoelectric materials, three types of Al-Ag thin films with different Al contents were fabricated, maintaining a consistent thickness of 150 nm. As the Al content decreased from 84.6 at% to 21.7 at%, the resistivity increased from 5.1 to 0.8 × 10^-5 Ω-cm, while the calculated density increased from 3.9 to 8.8 g/cm³. The SAW devices fabricated with these Al-Ag IDT electrodes resonated at 71 MHz without frequency shifts, but the resonant frequency selectivity and insertion loss deteriorated with decreasing Al content, highlighting the predominant influence of electrode density over electrical conductivity on SAW device performance.

• 한국표면공학회지
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• 제43권3호
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.