• Korean Journal of Materials Research
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• v.21 no.12
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• pp.639-643
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• 2011

Zinc oxide as an optoelectronic device material was studied to utilize its wide band gap of 3.37 eV and high exciton biding energy of 60 meV. Using anti-site nitrogen to generate p-type zinc oxide has shown a deep acceptor level and low solubility. To increase the nitrogen solubility in zinc oxide, group 13 elements (aluminum, gallium, and indium) was co-added to nitrogen. The effect of aluminum on nitrogen solubility in a $3{\times}3{\times}2$ zinc oxide super cell containing 72 atoms was investigated using density functional theory with hybrid functionals of Heyd, Scuseria, and Ernzerhof (HSE). Aluminum and nitrogen were substituted for zinc and oxygen sites in the super cell, respectively. The band gap of the undoped super cell was calculated to be 3.36 eV from the density of states, and was in good agreement with the experimentally obtained value. Formation energies of a nitrogen molecule and nitric oxide in the zinc oxide super cell in zinc-rich conditions were lower than those in oxygen-rich conditions. When the number of nitrogen molecules near the aluminum increased from one to four in the super cell, their formation energies decreased to approach the valence band maximum to some degree. However, the acceptor level of nitrogen in zinc oxide with the co-incorporation of aluminum was still deep.

• Journal of the Korean Applied Science and Technology
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• v.31 no.4
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• pp.731-739
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• 2014

Aluminum and boron co-doped zinc-oxide(AZOB) powders as transparent conducting oxide(TCO) were prepared by spray pyrolysis at $900^{\circ}C$. The micron-sized AZOB particles were prepared by spray pyrolysis from aqueous precursor solutions for aluminium, boron, and zinc. The micron-sized AZOB particle after the spray pyrloysis underwent post-heat treatment at $700^{\circ}C$ for 2 hours and it was changed fully to nano-sized AZOB particle by ball milling for 24 hours. The size of primary AZOB particle by Debye-Scherrer Equation and surface resistance of AZOB pellet were measured.

• Journal of information and communication convergence engineering
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• v.9 no.4
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• pp.461-465
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• 2011

An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.269-273
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• 1997

Chemical composition of cement powder influences the setting time and early compressive strength development. The setting time increases as the amounts of zinc oxide and magnesium oxide are increased. For one day compressive strength development, a cement powder with a composition 90% ZnO, 8% MgO and 2% silica resulted in the highest strength (greater than 1, 090 kg/$\textrm{cm}^2$). Cement-forming liquids also need to be buffered, with both aluminum and zinc ions, for a good consistency and a higher strength of the zinc phosphate cement. These liquids control the setting reactions.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.609-614
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• 2014

We fabricated amorphous zinc tin oxide (ZTO) transparent thin-film transistors (TTFTs). The effects of Al electrode on the mobility and threshold voltage of the ZTO TTFTs were investigated. It was found that the aluminum (Al)-ZTO contact decreased the mobility and increased the threshold voltage. Traps, originating from $AlO_x$, were assumed to be the cause of degradation. An indium tin oxide film was inserted between Al and ZTO as a buffer layer, forming an ohmic contact, which was revealed to improve the performance of ZTO TTFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.711-715
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• 2007

Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.32-36
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• 2018

For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.205-209
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• 2011

Zinc oxide has semi-conductivity and super conductivity characteristics. It can be used optically and is applied on many areas such as gas sensor, solar cell and optical waveguide. In this paper, to improve optical characteristics of ZnO, aluminum was added on zinc oxide. Zinc oxide and aluminum zinc oxide was fabricated as nano fiber form. ZnO solution was created by mixing poly vinyl pyrrolidone, ethyl alcohol, and zinc acetate. An Al doped ZnO was created by adding aluminum solution to ZnO sol. By applying these sols on electro spinning method, nano fibers were fabricated. These fibers are heat treated at 300, 500, and $700^{\circ}C$ degrees and were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to examine the nano structures. TGA and DSC measurement was also used to measure the change of mass and calorie upon temperature change. The absorbance of ZnO and Al-doped ZnO was carried out by UV-vis measurement.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.