• Corrosion Science and Technology
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• 제18권6호
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• pp.228-231
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• 2019

Aluminum and its alloys have been widely used in various fields because of low weight, high strength, good conductivity, and low price. It is well known that aluminum alloys that cause natural oxide film can inhibit corrosion in wet, salty environments. However, these oxides are so thin that corrosion occurs in a variety of environments. To prevent this problem, an electrochemical anodizing technique was applied to the aluminum alloy surface to form a thick layer of oxide and a unique oxide shape, such as a hierarchical pore structure simultaneously combining large and small pores. The shape of the structures was implemented using stepwise anodization voltages such as 40 V for mild anodizing and 80 V for hard anodizing, respectively. To maximize water repellency, it is crucial to the role of surface structures shape. And a hydrophobic thin film was coated by 1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane (FDTS) to minimize surface energy of the structure surface. Thus, such nanoengineered superhydrophobic surface exhibited a high water contact angle and excellent corrosion resistance such as low corrosion current density and inhibition efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.111-111
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• 2009

In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

• 한국표면공학회지
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• 제53권5호
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• 한국표면공학회지
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• 제53권1호
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• pp.36-42
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• 2020

In this study, two novel methods to measure the surface hardness of anodic oxide films on aluminum alloys are reported. The first method is to impregnate oil-based ink into pores in the anodic oxide film and then to clean the ink on the surface using ethanol, resulting in an impregnation of inks only inside of the pores in anodic oxide film. The second method is to coat the anodic oxide film surface with thin Au layer less than 0.1 ?. Both the ink-impregnating method and Au-coating method provided clear indentation marks on the anodic oxide film surface when it was indented using a pyramidal-diamond penetrator. Thus, Vickers hardness of anodic oxide films on aluminium alloy could be measured successfully and precisely from the anodic film surface. In addition, advantages and disadvantages of the ink-impregnating method and Au-coating method for the measurement of surface hardness of anodic oxide films are discussed.

• 한국재료학회지
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• 제29권9호
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• pp.567-577
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• 2019

Aluminum nitride (AlN) has versatile and intriguing properties, such as wide direct bandgap, high thermal conductivity, good thermal and chemical stability, and various functionalities. Due to these properties, AlN thin films have been applied in various fields. However, AlN thin films are usually deposited by high temperature processes like chemical vapor deposition. To further enlarge the application of AlN films, atomic layer deposition (ALD) has been studied as a method of AlN thin film deposition at low temperature. In this mini review paper, we summarize the results of recent studies on AlN film grown by thermal and plasma enhanced ALD in terms of processing temperature, precursor type, reactant gas, and plasma source. Thermal ALD can grow AlN thin films at a wafer temperature of $150{\sim}550^{\circ}C$ with alkyl/amine or chloride precursors. Due to the low reactivity with $NH_3$ reactant gas, relatively high growth temperature and narrow window are reported. On the other hand, PEALD has an advantage of low temperature process, while crystallinity and defect level in the film are dependent on the plasma source. Lastly, we also introduce examples of application of ALD-grown AlN films in electronics.

• 한국재료학회지
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• 제26권1호
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• pp.42-46
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• 2016

The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.391-394
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology Properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9 mTorr) and high substrate temperatures ($\leq$30$0^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 한국표면공학회지
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• 제54권1호
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• pp.25-29
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• 2021

The fabrication of nanopore membrane by deposition of Al2O3 film using electron-beam evaporation, which is fast, cost-effective, and negligible dependency on substance material, is investigated for potential applications in water purification and sensors. The decreased nanopore diameter owing to increased wall thickness is observed when Al2O3 film is deposited on anodic aluminum oxide membrane at higher deposition rate, although the evaporation process is generally known to induce a directional film deposition leading to the negligible change of pore diameter and wall thickness. This behavior can be attributed to the collision of evaporated Al2O3 particles by the decreased mean free path at higher deposition rate condition, resulting in the accumulation of Al2O3 materials on both the surface and the edge of the wall. The reduction of nanopore diameter by Al2O3 film deposition can be applied to the nanopore membrane fabrication with sub-100 nm pore diameter.

• 한국재료학회지
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• 제21권3호
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• pp.174-179
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• 2011

Ultra-thin aluminum (Al) and tin (Sn) films were grown by dc magnetron sputtering on a glass substrate. The electrical resistance R of films was measured in-situ method during the film growth. Also transmission electron microscopy (TEM) study was carried out to observe the microstructure of the films. In the ultra-thin film study, an exact determination of a coalescence thickness and a continuous film thickness is very important. Therefore, we tried to measure the minimum thickness for continuous film (dmin) by means of a graphical method using a number of different y-values as a function of film thickness. The raw date obtained in this study provides a graph of in-situ resistance of metal film as a function of film thickness. For the Al film, there occurs a maximum value in a graph of in-situ electrical resistance versus film thickness. Using the results in this study, we could define clearly the minimum thickness for continuous film where the position of minimum values in the graph when we put the value of Rd3 to y-axis and the film thickness to x-axis. The measured values for the minimum thickness for continuous film are 21 nm and 16 nm for sputtered Al and Sn films, respectively. The new method for defining the minimum thickness for continuous film in this study can be utilized in a basic data when we design an ultra-thin film for the metallization application in nano-scale devices.