• 전기학회논문지
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• 제58권10호
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• pp.1976-1981
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• 2009

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• 한국결정성장학회지
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• 제8권4호
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• pp.592-598
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• 1998

ZnO($Al_2O_3\;2%$ 2% doped) 산화물 타겟과 금속 Zn(Al 2% doped) 타겟을 사용하여 반응성 직류 마그네트론 스퍼터링법으로 산소 가스 및 인가 전력을 조절하면서 AZO(Aluminum doped Zine Oxide) 막을 증착하였다. 비저항과 평균 투과율을 고려할 때 최적의 투명전도성을 보이는 조건은 산화물 타겟의 경우 산소가스의 비가 $0.5{\times}10^{-2}~1.0{\times}10^{-2}$범위이며, 금속 타겟의 경우 인가전력 0.6kW에서는 0.215~0.227, 1.0kW에서는 0.305~0.315이었다. 각 최적조건에서 제막된 AZO 막의 비저항은 $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}cm$cm으로 타겟에 의한 차이는 없었다.

• 한국결정성장학회지
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• 제8권4호
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• pp.587-591
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• 1998

마이크로 웨이브를 보조 여기원으로 사용한 직류 magnetron 스퍼터링법으로 Aluminum이 2wt% 포함되어 있는 Zn:Al 합금타겟을 사용하여 AZO(Aluminum doped zinc oxide) 투명 전도막을 제막하였고 그 영향을 조사하였다. 타겟인가 전압이 420V에서 증착된 막의 투과율, 비저항 그리고 증착속도는 각각 50~70%, $5.5{\times}10^{-3}{\Omega}$cm 그리고 6,000$\AA\textrm{mm}^2$/J 이었다. 이 막을 40$0^{\circ}C$에서 30분간의 열처리하면 광투과율은 80% 이상으로 열처리전에 비해 향상되었으며 전도도는 2배 이상 향상되어 비저항값이 $2.0{\times}10^{-3}{\Omega}$cm인 막을 얻을 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3579-3582
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• 2010

We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom’s lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.79-83
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• 1994

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• 마이크로전자및패키징학회지
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• 제23권4호
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• pp.79-85
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• 2016

It is imperative to find environment-friendly coatings as an alternative to the currently used hexavalent chromate conversion coatings for the purpose of improving the anti-corrosion properties of aluminum alloys. Hence, in this study, the corrosion properties of a trivalent chromate conversion coating solution are analyzed and measured. Because of the presence of multiple components in trivalent chromate conversion coating solutions, it is difficult to control plating, attributed to their mutual organic relationship. It is of significance to determine the concentrations of the components present in these coatings; hence, qualitative and quantitative analysis is required. The coating solution contained not only an environment-friendly component chromium(III), but also zirconium, fluorine, sulfur, and potassium, in the coating film. These metals are confirmed to produce a film with improved corrosion resistance to form a thin layer. The excellent corrosion resistance for the trivalent chromate solution is attributed to various inorganic and organic additives.

• 한국전기전자재료학회논문지
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• 제27권1호
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.11-14
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• 2022

In this work, we evaluated the Al₂O₃ film, which was deposited by atomic layer deposition, degraded by exposure to harsh environments. The Al₂O₃ films deposited by atomic layer deposition have long been used as a gas diffusion barrier that satisfies barrier requirements for device reliability. To investigate the barrier and mechanical performance of the Al₂O₃ film with increasing temperature and relative humidity, the properties of the degraded Al₂O₃ film exposed to the harsh environment were evaluated using electrical calcium test and tensile test. As a result, the water vapor transmission rate of Al₂O₃ films stored in harsh environments has fallen to a level that is difficult to utilize as a barrier film. Through water vapor transmission rate measurements, it can be seen that the water vapor transmission rate changes can be significant, and the environment-induced degradation is fatal to the Al₂O₃ thin films. In addition, the surface roughness and porosity of the degraded Al₂O₃ are significantly increased as the environment becomes severer. the degradation of elongation is caused by the stress concentration at valleys of rough surface and pores generated by the harsh environment. Becaused the harsh envronment-induced degradation convert amorphous Al₂O₃ to crystalline structure, these encapsulation properties of the Al₂O₃ film was easily degraded.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.533-537
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• 2003

Compared to sintered polycrystalline diamond (PCD), the deposited thin film diamond has a great advantage on the fabrication of cutting tools with complex geometries such as drills. Because of high performance in high speed machining non-ferrous difficult-to-cut materials in the field of automobiles industry, aeronautics and astronautics industry, diamond-coated drills find large potentialities in commercial applications. However, the poor adhesion of the diamond film on the substrate and high surface roughness of the drill flute adversely affect the tool lift and machining quality and they become the main technical barriers for the successful development and commercialization of diamond-coated drills. In this paper, diamond thin films were deposited on the commercial WC-Co based drills by the electron aided hot filament chemical vapor deposition (EACVD). A new multiple coating technology based on changing gas pressure in different process stages was developed. The large triangular faceted diamond grains may have great contribution to the adhesive strength between the film and the substrate, and the overlapping ball like blocks consisted of nanometer sized diamond crystals may contribute much to the very low roughness of diamond film. Adhesive strength and quality of diamond film were evaluated by scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectrum and drilling experiments. The ring-block tribological experiments were also conducted and the results revealed that the friction coefficient increased with the surface roughness of the diamond film. From a practical viewpoint, the cutting performances of diamond-coated drills were studied by drilling the SiC particles reinforced aluminum-matrix composite. The good adhesive strength and low surface roughness of flute were proved to be beneficial to the good chip evacuation and the decrease of thrust and consequently led to a prolonged tool lift and an improved machining quality. The wear mechanism of diamond-coated drills is the abrasive mechanical attrition.