• 한국재료학회지
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• 제24권10호
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• pp.532-537
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• 2014

In this study, highly sensitive hydrogen micro gas sensors of the multi-layer and micro-heater type were designed and fabricated using the micro electro mechanical system (MEMS) process and palladium catalytic metal. The dimensions of the fabricated hydrogen gas sensor were about $5mm{\times}4mm$ and the sensing layer of palladium metal was deposited in the middle of the device. The sensing palladium films were modified to be nano-honeycomb and nano-hemisphere structures using an anodic aluminum oxide (AAO) template and nano-sized polystyrene beads, respectively. The sensitivities (Rs), which are the ratio of the relative resistance were significantly improved and reached levels of 0.783% and 1.045 % with 2,000 ppm H2 at $70^{\circ}C$ for nano-honeycomb and nano-hemisphere structured Pd films, respectively, on the other hand, the sensitivity was 0.638% for the plain Pd thin film. The improvement of sensitivities for the nano-honeycomb and nano-hemisphere structured Pd films with respect to the plain Pd-thin film was thought to be due to the nanoporous surface topographies of AAO and nano-sized polystyrene beads.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.62-65
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• 2002

Transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Coming 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1482-1484
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• 2002

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.

• The Korean Journal of Ceramics
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• 제1권2호
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• pp.91-95
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• 1995

Polycrystalline bismuth- and aluminum- substituted dysporsium and yttrium iron garnet (Bi2R3-xAlyFe5-yO12, R=Dy or Y, $0\leqx\leq3, \; 0\leqy\leq3$) films have been prepared by pyrolysis. The crystallization temperatures, the solubility limit of bismuth ions into the garnet phase, and magnetic and magneto-optic properties of the films have been investigated as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained unchanged at x>1.5, whereas, showed no changes as aluminum concentration (y) increased up to y=1.0 and then gradually increased at y>1.0. The solubility limit of bismuth ions was x=1.8 when y=0 but increased to x=2.3 when y=1.0. It was demonstrated that the magnetic and magneto-optic properties of the dysprosium iron garnet films could be tailored by bismuth and aluminum substitution suitable for magneto-optic recording as follows. The saturation magnetization and coercivity data obtained for the films indicated that the film composition at which the magnetic compensation temperature became room temperature was y=1.2 when x=1.0. Near this composition the coercivity and the squareness of the magnetic hysteresis loop of the films were several kOe and unit, respectively. The Curie temperatures of the films increased with the increase of x but decreaed with the increase of y, and was 150-$250^{\circ}C$ when x=1.0 and y=0.6-1.4. The Faraday rotation at 633 nm of the films increased as x increased but decreased as y increased, and was 1 deg/$\mu\textrm{m}$ when x=1.0 and y=1.0. Based on the data obtained, the appropriate film composition for magneto-optic recording was estimated as near x=1.0 and y=1.0 or $BiDy_2AlFe_4O_{12}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• 전자공학회논문지A
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• 제33A권10호
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• pp.98-106
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• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.318-318
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• 2011

Etching of an ultrathin aluminum oxide film on NiAl(110) substrate by methanol is studied by home-built scanning tunneling microscopy at room-temperature. We deposited liquid methanol on thin alumina film by using a high speed solenoid valve suitable for deposition of thermally unstable molecules. It is found that only the reflection domain boundary between two domains was preferentially etched by methanol. Since the reflection domain boundary has many oxygen vacancies and irregular structures, judging from the fact, we assume that oxygen vacancies cause the chemically reactive phenomena of methanol in reflection domain boundary on an alumina film. The reactivity of the reflection domain boundary is attributed to the oxygen vacancies due to irregular structures. Similar reactivity is found on the oxygen deficient alumina produced on top of the intact alumina.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.