• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.593-596
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• 2007

A possibility of manufacturing bendable ac-PDP using aluminum electrode with anodic aluminum oxide dielectric material system on PET film substrate was explored. For this structure, PET film with fence-structured aluminum electrodes was used for front plate and PET film with barrier ribs of UV curable resin for the rear plate. The results demonstrate that it is feasible to manufacture the bendable ac-PDPs using those material system and are expected to expand the applications of plasma display panels.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.528-531
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• 1994

Digitalization in electronic system is required the capacitor which have a large capacitance with small size, low impedance at high frequency, and high reliability. The fabrication and its properties of aluminum solid electrolytic capacitor are investigated. Employing conduction polymer film such as, polypyrrole as solid electroylte, solid type aluminum electrolytic capacitors were made. The surface of insulationg oxide is covered with conducting polymer layer prepared by chemical oxidative polymerization. Thereafter this conducting layer is covered with conducting polymer prepared by electrochemical polymerization. The dielectric properties of these capacitors were also measured and discussed. Regarding on frequency characteristics of the trial made capacitor, impedance and ESR at high frequency is lower than those of the stacked type film capacitor. It is alo confirmed that temperature coefficient of capacitance and dissipation factor of the capacitor are lower than those of film capacitor and liquid type aluminum electrolytic capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.194-195
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• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.

• Journal of the Korean Chemical Society
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• v.63 no.6
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• pp.440-445
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• 2019

It has developed a method that can recover efficiently the reproducible resources from the vehicle waste lithium second battery module. Module cell consists of copper thin film, aluminum thin film and diaphragm made with polymer between these thin films. Cell was disassembled completely without any damage in glove box and through several steps. Preferentially, cathode active material was separated from aluminum thin film at heat treatment of 400 ℃. The retrieved cathode active material was then obtained as high purity after calcining at 800 ℃ to remove residual carbon. Based on this study, it was found that rare metals such as Co, Ni, Mn and Li made up of cathode active material could recover above 80% from aluminum thin film.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.10
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• pp.1019-1023
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• 2012

In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of $1cm{\times}1cm$ can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 $cm^{-1}$, which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of $10^{21}cm^{-3}$. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.

• Journal of information and communication convergence engineering
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• v.1 no.1
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• pp.23-26
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• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Corrosion Science and Technology
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• v.21 no.6
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• pp.495-502
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• 2022

Anodization is a representative electrochemical surface treatment method that can improve both heat resistance and corrosion resistance by forming an anodization film on the surface of the aluminum. However, these properties can be changed after an additional heat treatment process. In this study, Al 6061 was subjected to an anodization process at 60 V for 1 hour, 5 hours, or 9 hours. An additional heat treatment process was performed at 500 ℃ for 30 minutes. Field emission scanning electron microscopy (FE-SEM) analysis revealed that the thickness of the anodized film was increased in proportion to the anodization time. Both pore size and pore diameter of the anodized film was also increased after anodization. After an additional heat treatment process, there were no significant changes in the thickness, pore size, or pore diameter of the anodized film. Heat resistance was confirmed through thermal analysis and chemical resistance was evaluated with a potentiodynamic polarization test.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.