• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.909-915
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• 2003

Anodic oxide films on aluminum play an important role as a dielectrics in aluminum electrolytic capacitor. In order to obtain the high capacitance, ZrO$_2$ films were coated on aluminum foils by sol-gel method and then, the properties of anodized films were studied. The coating and drying of the films were repeated 4-10 times and annealed at 300～$600^{\circ}C$ and the triple layer of ZrO$_2$/Al-ZrO$_{x}$ /Al$_2$O$_3$ was formed onto aluminum substrates after anodizing of ZrO$_2$/Al film. The thickness of $Al_2$O$_3$ layer was decreased with increasing the annealing temperature due to the densification of ZrO$_2$ film. The ZrO$_2$ films were crystallized even at 30$0^{\circ}C$ and showed nanocrystalline structure. The. capacitance of aluminum foil annealed at low temperature was higher than that at high temperature. The increase of capacitance was due to the high capacitance of ZrO$_2$ film annealed at low temperature. The capacitance of ZrO$_2$ coated aluminum increased about 3 times compared to that without a ZrO$_2$ layer after anodizing to 400 V. From these results, the aluminum foils with composite oxide layers are found to be applicable to the aluminum electrolytic capacitor.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.438-444
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• 2003

A new method to measure residual stress in micron and nano scale films is described. In the theory it is based on Linear Elastic Fracture Mechanics. And in the techniques it depends on the combined capability of the focused ion beam (FIB) imaging system and of high-resolution digital image correlation (DIC) software. The method can be used for any film material (whether amorphous or crystalline) without thinning the substrate. In the method, a region of the film surface is highlighted and scanning electron images of that region taken before and after a long slot, depth a, is introduced using the FIB. The DIC software evaluates the displacement of the surface normal to the slot due to the stress relaxation by using features on the film surface. To minimize the influence of signal noise and rigid body movement, not a few, but all of the measure displacements are used for determining the real residual stress. The accuracy of the method has been assessed by performing measurements on a nano film of diamond like carbon (DLC) on glass substrate and on micro film of aluminum oxide thermally grown on Fecrally substrate. It is shown that the new method determines the residual stress ${\sigma}_R=-1.73$ GPa for DLC and ${\sigma}_R=-5.45$ GPa for the aluminum oxide, which agree quite well with ones measured independently.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• Journal of Adhesion and Interface
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• v.5 no.2
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• pp.1-7
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• 2004

A novel carboxyl terminated butadiene-acrylonitrile (CTBN) modified, low temperature cure epoxy film adhesive was developed in this paper. It can be cured at as low as $75^{\circ}C$ for 4 hours with a pressure of 0.1MPa. After post cure at $120^{\circ}C$ for 2 hours, the bonding strengths of Phosphoric Acid Anodizing(PAA) surface treated aluminum adherend were similar to those of structural film adhesives curing at $120^{\circ}C$. It is suitable to bond both metal/composite laminate-to-laminate and laminate to honeycomb structure.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.90-96
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• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.361-368
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• 2022

The overall process, from the pre-treatment of aluminum substrates to the eco-friendly neutral electroless Ni-P plating process, was observed, compared, and analysed. To remove the surface oxide layer on the aluminum substrate and aid Ni-P plating, a zincation process was carried out. After the second zincation treatment, it was confirmed that a mostly uniform Zn layer was formed and the surface oxide of aluminum was also removed. The Ni-P electroless plating films were formed on the secondary zincated aluminum substrate using electroless plating solutions of pH 4.5 and neutral pH 7.0, respectively, while changing the plating bath temperature. When a neutral pH7.0 electroless solution was used, the Ni-P plating layer was uniformly formed even at the plating bath temperature of 50 ℃, and the plating speed was remarkably increased as the bath temperature was increased. On the other hand, when a pH 4.5 Ni-P electroless solution was used, a Ni-P plating film was not formed at a plating bath temperature of 50 ℃, and the plating speed was very slow compared to pH 7.0, although plating speed increased with increasing bath temperature. In the P contents, the P concentration of the neutral pH 7.0 Ni-P electroless plating layer was reduced by ~ 42.3 % compared to pH 4.5. Structurally, all of the Ni-P electroless plating layers formed in the pH 4.5 solution and the neutral (pH 7.0) solution had an amorphous crystal structure, as a Ni-P compound, regardless of the plating bath temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.153-153
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• 2016

Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the sea water upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Afterward, the irregular oxide film that was created in the first step surface modification was removed. For the second step surface modification process (identical to the step 1), etching was performed using mixture of chromic acid (1.8 wt.%) and phosphoric acid (6 wt.%) at $60^{\circ}C$ temperature for 30 minutes. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification presented a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.50-53
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• 2019

In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with $Al_2O_3$. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the $Al_2O_3$ diffusing barrier was conducted before annealing treatment. The heat treatment for the activation of the amorphous-Si (a-Si) layer was carried out with Rapid Thermal Annealing (RTA) process. Crystallization of the a-Si layer was analyzed with XRD. It was confirmed that a-Si was crystallized at $500^{\circ}C$ and the silicon crystal is observed to be formed and the grain size of the polycrystalline silicon was observed to be $15.9{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.72-73
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• 2009

In this study, we fabricated of pentacene organic thin film trasistor(OTFT), which used aluminum oxide for the gate insulator on glass substrate. Aluminum oxide for OTFTs was deposited on the gate layer by E-beam evaporation. aluminum oxide fabricated various deposition rate. In this case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulator OTFT showed a threshold voltage of -1.36V, an on/off current ratio of $1.9{\times}l0^3$ and field effect mobility $0.023\;cm^2/V_s$.