• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.717-721
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• 2017

We studied the performance enhancement of organic light-emitting diodes (OLEDs) using 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane ($F_4-TCNQ$) as the hole-transport layer. To investigate how $F_4-TCNQ$ affects the device performance, we fabricated a reference device in an ITO (170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm) structure. Several types of test devices were manufactured by either doping the $F_4-TCNQ$ in the TPD layer or forming a separate $F_4-TCNQ$ layer between the ITO anode and TPD layer. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxyquinoline) aluminum ($Alq_3$), and $F_4-TCNQ$ layers were formed by thermal evaporation at a pressure of $10_{-6}$ torr. The deposition rate was $1.0-1.5{\AA}/s$ for TPD and $Alq_3$. The LiF was subsequently thermally evaporated at a deposition rate of $0.2{\AA}/s$. The performance of the OLEDs was considered with respect to the turn-on voltage, luminance, and current efficiency. It was found that the use of $F_4-TCNQ$ in OLEDs enhances the performance of the device. In particular, the use of a separate layer of $F_4-TCNQ$ realizes better device performance than other types of OLEDs.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.17 no.3
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• pp.155-165
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• 2024

A hybrid thin film was prepared by doping reduced graphene oxide (rGO) into a sol-gel solution mixed with aluminum, titanium, and strontium using a brush coating method. The annealing temperature was carried out at 160, 260, and 360℃, and the difference in oxidation reaction was observed. The sol-gel solution created during the membrane manufacturing process generates a contractile force due to the shear stress of the brush bristles, forming a microgroove structure. This structure was confirmed through scanning electron microscopy analysis, and the presence of rGO was clearly revealed. As the annealing temperature increases, the oxidation and reduction reactions on the thin film surface become more active, so the intensity of the surface mixture increases. Moreover, the electro-optical properties were stabilized and improved by increasing the intensity of the mixtures. Likewise, the voltage-capacitance values are also significantly improved. Lastly, the transmittance measurement showed that it was suitable for liquid crystal display application.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.778-783
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• 2000

Effects of the $Al_2$O$_3$surface protective layer, deposited on the SnO$_2$sensing layer by aerosol flame deposition (AFD) method, on the sensing properties of SnO$_2$thin film ags sensors were investigated.Effects of Pt doping to the $Al_2$O$_3$surface protective layer on the selectivity of CH$_4$ gas were also investigated. 0.3$\mu\textrm{m}$ thick SnO$_2$thin sensing layers on Pt electrodes were prepared by R.F. magnetron sputtering with R.F. power of 50 W, at working pressure of 4mTorr, and at 20$0^{\circ}C$ for 30 min. $Al_2$O$_3$surface protective layers on SnO$_2$layers were prepared by AFD using a diluted aluminum nitrade (Al(NO$_3$).9$H_2O$) solution. The sensitivity of CO gas in the SnO$_2$gas sensor with an $Al_2$O$_3$surface protective layer was significantly decreased. But that of CH$_4$gas remained almost same with pure SnO$_2$gas sensor. This result shows that the selectivity of CH$_4$gas is increased because of the $Al_2$O$_3$surface protective layer. In the case of SnO$_2$gas sensors with Pt-doped $Al_2$O$_3$surface protective layers, low sensing property to CO gas and high sensing property to CH$_4$were observed. This results in the increasing of selectivity of CH$_4$gas selectivity are discussed.