• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.35 no.3
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• pp.218-224
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• 2007

Although piezoelectric materials such as PZT have been widely used as actuators in the field of active vibration suppression, the use of bare PZT as an actuator may cause some drawbacks such as critical breaks in the installation process, short circuits in the host material and low fatigue performance. The LIPCA-C2 (lightweight piezocomposite actuator) was developed to alleviate these problems. We implemented the LIPCA as an actuator to suppress the vibration of an aluminum cantilever beam with a tip mass. In our test, we used positive position feedback control algorithm. The filter frequency for this type of feedback should be tuned to the natural frequency of the target mode. The first three experimental natural frequencies of the aluminum cantilever beam agree well with the results of finite element analysis. The effectiveness of using the LIPCA as an actuator in active vibration suppression was investigated with respect to the time and frequency domains, and the experimental results show that LIPCAs with PPF control can significantly reduce the amplitude of forced vibrations and the settling time of free vibrations. For a case study, the forced vibration control of several beams with different thicknesses were performed.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.266-270
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• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

• Korean Journal of Construction Engineering and Management
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• v.17 no.2
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• pp.135-145
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• 2016

In Korea, a series of noise-reduced aluminum forms are being recently used in apartment housing construction. However, their complicated and time-consuming work processes, and the noise which is still generated due to the inherent property of aluminum when especially installing and dismantling them have been pointed out as a problem to be certainly solved for increasing their practical use in construction sites. The primary objectives of this study are proposing an optimal conceptual design of a newly designed noise-reduced aluminum form and verifying the technical feasibility by conducting a working mock-up drive experiment. Thus, conventional noise-reduced aluminum forms have been analyzed and three conceptual designs of a newly noise-reduced aluminum forms have been deducted. AHP has been applied to a survey data collected by interviewing field experts. A trade-off analysis results have shown that 'Noise-reduced System Aluminum Form with a Drop-down Floor Post and Adaptive Beam' the highest weights of safety(0.52), work convenience(0.54) and thus selected. The suggested conceptual design in this study improved problems of conventional system aluminum forms. It is also expected that the suggested design will be used as a reliable guideline for the actual development of an aluminum form that ensures noise-reduce, work convenience and labor safety.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.235-239
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• 2006

The aluminum nitride(AlN) layer on Al7075 substrate has been formed through nitrogen ion implantation process. The implantation process was performed under the conditions : 100 keV energy, total ion dose up to $2{\times}10^{18}\;ions/cm^2$. XRD analysis showed that aluminum nitride layers were formed by nitrogen implantation. The formation of Aluminum nitride enhanced surface hardness up to 265HK(0.02 N) from 150HK(0.02 N) for the unimplanted specimen. Micro-Knoop hardness test showed that wear resistance was improved about 2 times for nitrogen implanted specimens above $5\;{\times}\;10^{17}\;ions/cm^2$. The friction coefficient was measured by Ball-on-disc type wear tester and was decreased to 1/3 with increasing total nitrogen ion dose up to $1\;{\times}\;10^{18}ions/cm^2$. The enhancement of mechanical properties was observed to be closely associated with AlN formation. AES analysis showed that the maximum concentration of nitrogen increased as ion dose increased until $5\;{\times}\;10^{17}\;ions/cm^2$.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• Journal of radiological science and technology
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• v.21 no.2
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• pp.5-10
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• 1998

In the mammography, X-ray beam quality is one of the most important factors. Using X-ray mammography unit model GE/CGR Senography 600T Senix H.F, Authors studied four subjects. 1. The aluminum attenuation rate in 30 kVp when used with or without compression plate. 2. HVLs at 5 different area of the X-ray field of $26{\sim}32kVp$. 3. HVLs to know the influence of corrected measurement or parallel measurement. 4. Film density with microdensitometer along and cross to the long axis of X-ray tube, in terms of the Heel effect in the X-ray field. The following results were obtained. 1. Beam quality of anode area was harder than cathode area. 2. The dose reduction rate of compression plate was approximately $65.5%{\sim}88.1%$ and the beam quality with compression plate was hardened up to 4kVp accordingly. 3. If the X-ray beam enters the attenuation plate obliquely, HVL was $2.6{\sim}2.9%$ harder than perpendicular to it. 4. Because of heel effect, the film density of cathode area is higher than anode area to film density of 0.5.

• Smart Structures and Systems
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• v.6 no.8
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• pp.921-938
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• 2010

Most of studies on control of beams containing piezoelectric sensors and actuators have been based on linear quadratic regulator (LQR) with state feedback or output feedback law. The aim of this study is to develop velocity-acceleration feedback law in the optimal control of smart piezoelectric beams. A new controller which is an optimal control system with velocity-acceleration feedback is presented. In finite element modeling of the beam, the variation of mechanical displacement through the thickness is modeled by a sinus model that ensures inter-laminar continuity of shear stress at the layer interfaces as well as the boundary conditions on the upper and lower surfaces of the beam. In addition to mechanical degrees of freedom, one electric potential degree of freedom is considered for each piezoelectric element layer. The efficiency of this control strategy is evaluated by applying to an aluminum cantilever beam under different loading conditions. Numerical simulations show that this new control scheme is almost as efficient as an optimal control system with state feedback. However, inclusion of the acceleration in the control algorithm increases practical value of a system due to easier and more accurate measurement of accelerations.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1429-1431
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• 2005

Organic molecular-beam deposition of Mg:Ag thin films with a low Mg concentration on tris (8-hydroxyquinolino) aluminum $(Alq_3)$ layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the $Mg:Ag/Alq_3$ heterointerface, determined from current-voltage measurements, was as low as 0.23 eV. These results help improve understanding the electrical properties of the $Mg:Ag/Alq_3$ heterointerfaces in OLEDs.

• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.109-114
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• 2004

This paper presents a theoretical and experimental study of a non-collocated pair of piezopolymer PVDF sensor and piezoceramic PZT actuator, which are bonded on a cantilever beam, in order to suppress unwanted vibration at the tip of the beam. The PZT actuator patch was bonded near the clamped part and the PVDF sensor, which was triangularly shaped, was bonded on the other part of the beam. This is because the triangular PVDF sensor is known that it can detect the tip velocity of a cantilever beam. Because the arrangement of the sensor and actuator pair is not collocated and overlapped each other, the pair can avoid so called 'the in-plane coupling'. The test beam is made of aluminum with the dimension of $200\times20\times2mm$, and the two PZT5H actuators are both $20\times20\times1mm$ and bonded on the beam out-of-phase, and the PVDF sensor is $178mm\times6mm\times52{\mu}m$. Before control, the sensor-actuator frequency response function is confirmed to have a nice phase response without accumulation in a reasonable frequency range of up to 5000 Hz. Both the DVFB and displacement feedback strategies made the error signal from the tip velocity (or displacement) sensor is transmitted to a power amplifier to operate the PZT actuator (secondary source). Both the control methods attenuate the magnitude of the first two resonances in the error spectrum of about 6-7 dB.