• Journal of Sensor Science and Technology
• /
• v.23 no.3
• /
• pp.207-210
• /
• 2014

$TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.82-82
• /
• 2018

광전소자용 투명전극으로 적용하기 위한 초박형 Al 박막에 대해서 기초연구를 수행하였다. 증착 전 챔버(chamber) 내 기저압력은 $3{\times}10^{-7}Torr$이하로 유지하였으며 Ar 불활성 기체의 유입을 통해 작업압력을 $1{\times}10^{-2}Torr$로 상승시켜 증착을 실시하였다. DC 마그네트론 스퍼터링법을 이용하여 유리기판상에 Al 박막의 증착을 실시하였으며, 박막의 두께가 3-12 nm인 Al 박막을 각각 형성하였다. 두께가 7 nm 일 때 면저항은 $135{\Omega}/{\square}$로 측정되었고 7 nm 이상인 두께의 박막은 두께가 증가할 때 면저항이 점진적으로 감소되는 경향을 확인할 수 있었다. 두께가 10 nm인 박막의 측정된 면저항은 $13.1{\Omega}/{\square}$로 두께 7 nm인 박막과 비교하였을 때 약 10배의 차이를 확인할 수 있었다. 두께 6 nm 이하인 박막은 면저항 측정이 불가능하였는데 이는 SEM 분석 결과, 연속박막을 이루지 못 하였기 때문이라고 결론을 내릴 수 있었으며, 두께 12 nm인 박막까지 완전한 연속박막이 형성되지 않았다. 각각의 박막에서 입자의 크기는 선 교차법(line intercept method)을 이용하여 시편당 평균 120개의 입자에 대한 평균값을 측정하였으며, 이론적으로 예상할 수 있는 바와 같이 두께가 증가할수록 입자크기도 비례하여 증가하게 되는 것을 확인할 수 있었다. 가시광선 파장영역 내 투과도의 경우, 3 nm 두께에서 평균 80% 이상의 투과도가 측정된 데 반하여, 4-5 nm 두께에서 평균 60%로 급격하게 감소되기 시작하며 그 이후, 두께 증가에 따라 투과도가 점진적으로 감소되는 경향을 확인할 수 있었다. 또한 Al 박막은 시간의 경과에 따른 표면의 산화가 진행되어 기존에 측정된 면저항보다 10-60%의 면저항이 증가하였는데 이는 두께가 얇을수록 더 산화의 영향을 많이 받기 때문에 나타난 결과로 보인다. 추후 산화방지막 및 빛반사방지막 층을 초박형 Al박막과 함께 Oxide/Metal/Oxide 구조로 형성하여 위와 같은 현상들을 해결하고 박막물성의 증진을 통해 투명전극에 적용을 목표로 한다.

• Journal of Korea Foundry Society
• /
• v.36 no.2
• /
• pp.67-74
• /
• 2016

The effects of scrap content on the hot tearing property and tensile property were investigated in AC2BS alloy. The hot tearing strengths were $16.4kgf/cm^2$, $15.2kgf/cm^2$, $14.9kgf/cm^2$ and $13.3kgf/cm^2$, respectively, under the constant solid fraction of 29.3% when the scrap contents of the specimens were 0%, 20%, 35% and 50%. In the same way, tensile strengths of the as-cast condition were $24.5kgf/mm^2$, $23.7kgf/mm^2$, $17.3kgf/mm^2$ and $16.0kgf/mm^2$, respectively, and the corresponding tensile strengths of the T6 heat treatment condition were $27.2kgf/mm^2$, $26.7kgf/mm^2$, $24.2kgf/mm^2$ and $23.9kgf/mm^2$. Hot tearing strength and tensile strength decreased as scrap content of the specimen increased. According to the evaluation of the quantitative hot tearing and tensile test results, the decrease of these strengths is due to the presence of oxide films which act as crack initiation site of the specimens. Therefore, elimination of oxide films of aluminum melt to maintain melt cleanliness is required.

• Journal of Environmental Science International
• /
• v.19 no.6
• /
• pp.715-735
• /
• 2010

This study is designed to assess the priority order of the chemicals to cause to generate occupational diseases in order to understand the fundamental data required for the preparation of health protective measure for the workers dealing with chemicals. The 41 types of 51 ones of chemicals to cause to generate the national occupational diseases were selected as the study objects by understanding their domestic use or not, and their occupational diseases' occurrence or not among 110,608 types of domestic and overseas chemicals. To assess their priority order the sum of scores was acquired by understanding the actually classified condition based on a perfect score of physical riskiness(90points) and health toxicity(92points) as a classification standard by GHS, the priority order on GHS riskiness assessment, GHS toxicity assessment, GHS toxic xriskiness assessment(sum of riskiness plus toxicity) was assessed by multiplying each result by each weight of occupational disease's occurrence. The high ranking 5 items of chemicals for GHS riskiness assessment were turned out to be urethane, copper, chlorine, manganese, and thiomersal by order. Besides as a result of GHS toxicity assessment the top fives were assessed to be aluminum, iron oxide, manganese, copper, and cadium(Metal) by order. On the other hand, GHS toxicity riskiness assessment showed that the top fives were assessed to be copper, urethane, iron oxide, chlorine and phenanthrene by order. As there is no material or many uncertain details for physical riskiness or health toxicity by GHS classification though such materials caused to generate the national occupational diseases, it is very urgent to prepare its countermeasure based on the forementioned in order to protect the workers handling or being exposed to chemicals from health.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.24.2-24.2
• /
• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• Journal of the Korean Ceramic Society
• /
• v.24 no.1
• /
• pp.70-76
• /
• 1987

The effect of C12A7 and OH group on the synthesis of C3A by the sol-gel process using aluminum-sec-butoxide and calcium nitrate was studied. C3A by sol-gel method was compared with C3A obtained by the conventional method with respect to their reactivity of formation and crystal size. The sol-gel process for initial formation of C12A7 and C3A at lower temperature (1100, 1200$^{\circ}C$) was superior, but that for complete crystallization of C3A at higher temperature (1300, 1400$^{\circ}C$) was inferior to oxide mixture process. When heat treated under the atmosphere oxygen-free dried nitrogen eliminate the influence of OH group in C12A7, the reactivity of C3A from sol-gel sample incorporated OH group were poor, whereas that from oxide mixture sample showed remarkable effect. The poor crystallization of C3A at higher temperature is presumed to be due to the fact that incorporated OH group in C12A7 formed at lowr temperature might interrupt the diffusion of CaO to C12A7 to from C3A. The crystal size and the hydration characteristics of both C3A obtained by different processes exhibited almost the same results.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.319-325
• /
• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.77.1-77.1
• /
• 2013

Atomic layer deposition (ALD) is known for its self-limiting reaction, which offers atomic-level controllability of the growth of thin films for a wide range of applications. The self-limiting mechanism leads to very useful properties, such as excellent uniformity over a large area and superior conformality on complex structures. These unique features of ALD provide promising opportunities for future electronics. Although the ALD of Al2O3 film (using trimethyl-aluminum and water as a metal precursor and oxygen source, respectively) can be regarded as a representative example of an ideal ALD based on the completely self-limiting reaction, there are many cases deviating from the ideal ALD reaction in recently developed ALD processes. The nonconventional aspects of the ALD reactions may strongly influence the various properties of the functional materials grown by ALD, and the lack of comprehension of these aspects has made ALD difficult to control. In this respect, several dominant factors that complicate ALD reactions, including the types of metal precursors, non-metal precursors (oxygen sources or reducing agents), and substrates, will be discussed in this presentation. Several functional materials for future electronics, such as higher-k dielectrics (TiO2, SrTiO3) for DRAM application, and resistive switching materials (NiO) for RRAM application, will be addressed in this talk. Unwanted supply of oxygen atoms from the substrate or other component oxide to the incoming precursors during the precursor pulse step, and outward diffusion of substrate atoms to the growing film surface even during the steady-state growth influenced the growth, crystal structure, and properties of the various films.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2012.05a
• /
• pp.545-550
• /
• 2012

High Energy density metal powder has high melting point of oxide film. By this, the ignition source that can make a thermal effect of high-temperature during short time is needed to overcome ignition disturbance mechanism by oxide film. So effective ignition does not occurred with hydrocarbon ignitor, $H_2-O_2$ ignitor, high power laser. But steam plasma can be generate about 5000 K temperature field in short order. Because a steam plasma uses steam as the working gas, it is environmental-friendly and economical. Therefore in this study, we analyze steam plasma temperature field and radical species with optical emission spectroscopy method in order to apply steam plasma ignitor to metal combustion system and cloud particle ignition was identified in visual.

• Journal of the Society of Cosmetic Scientists of Korea
• /
• v.28 no.1
• /
• pp.15-30
• /
• 2002

최근 화장품 사용인구의 증가와 안전성에 대한 관심 증대에 따라 화장품 중 유해성분 함유에 대한 논란이 종종 있어왔다. 화장품에 대한 전문적 지식이 없는 사람들에 의하여 진행된 잘못된 정보로 인하여 화장품 중에 포함된 모든 중금속이 인체에 심각한 영향을 초래한다는 등의 오해를 불러와 관련 업계에 적지 않은 피해를 주기도 하였다. 이에 본 자료에서는 구체적 근거자료와 연구 논문들을 기반으로 유해한 중금속, 안전하여 사용이 공인된 중금속 등을 조사하여 화장품에서의 중금속의 개념을 정립하고자 하였다. 국내에서는 식품의약품안전청 고시 제2000-27호에 화장품에 포함되었을 때 유해한 중금속으로 납, 비소 및 수은을 명시하고 그 규제농도를 규정하고 있다. 규제 중금속은 아니지만 피부에 알러지를 일으키는 중금속으로는 니켈이 있는데 화장품 중 몇몇 제품군에서 소량(수∼수십ppm) 이 검출되기도 한다. 그러나 이는 일상으로 사용하는 각종 귀금속, 시계, 안경테, 클립, 지퍼 등의 금속 용품에 포함된 니켈의 양(수∼수십%)에 비하여 매우 적은 양이며 정상적인 사람에게는 무해하다. 실제 대다수의 니켈 알러지는 화장품이 아닌 귀금속이나 시계 등의 금속류 제품 등에 의하여 유발된다. 또한 많은 종류의 중금속 화합물이 화장품 원료로 사용되고 있다. 전세계적으로 널리 사용되는 것으로 크롬, 망간, 비스머스, 구리, 철, 코발트, 티타늄, 아연 등의 화합물이 있으며 이들은 각종 화장품 공정서 및 원료집 등에 수재되어 사용되고 있다. 이들 중 코발트와 크롬이 피부에 유해하다는 몇몇 보고가 있지만, 이는 이들 원소의 수용성염형태의 특정 화합물인 cobalt chloride와 chromate 및 dichromate의 염에 관한 것으로 화장품에서 사용되는 불용성 산화물인 cobalt aluminum oxide, cobalt titanium oxide, cobalt blue, chromium oxde greens 및 chromium hydroide green 등, 국제적으로 널리 사용되는 안전한 중금속 화합물과는 그 특성 및 독성이 판이하게 다르다. 따라서 화장품에서는 매우 안전한 중금속 화합물만이 사용된다. 업계는 유해 중금속에 관해서는 규제에 입각한 엄격한 품질관리에 힘쓰고 중금속의 화학적 분자구조(수용성염 vs 불용성산화물)를 구별할 수 있는 분석방법 개발에 주력하여야 한다. 그리고 안전한 화장품을 사용하고자 하는 소비자의 욕구를 충족시키고 잘못된 인식과 보도로 인하여 안전한 화장품이 유해한 것으로 오도되는 것을 막아야 할 것이다.