• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.112-117
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• 2000

Nd:YAG laser of 355nm wavelength, which amounts to 3.5eV, produced by a harmonic generator was used to create Ag metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+. The pulse widths and frequency of the laser were 8ns and 10Hz, respectively. For crystalline growth, heat-treatment following laser irradiation was carried out at $570^{\circ}C$ fur 1h. Then, the LiAlSi3O8. crystal phase appeared in the laser irradiated lithium aluminum silicate glass. We present the effect of laser-induced nucleation compared with spontaneous nucleation by heat treatment for crystallization in the glass.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.49.1-49.1
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• 2010

본 연구에서는 증착법에 의해 제조된 다결정 실리콘을 이용한 태양전지 제작과 관련하여 다결정 실리콘 씨앗층 제조를 위한 기판에 대하여 연구를 수행하였다. 다결정 실리콘 씨앗층을 제조할 수 있는 기술중 aluminum-induced layer exchange(ALILE) 공정을 이용하여 다결정 실리콘 씨앗층을 제조하였다. glass/Al/oxide/a-Si 구조로 알루미늄과 비정질 실리콘 계면에 알루미늄 산화막을 다양한 두께로 형성시켜, 알루미늄 유도 결정화에서 산화막의 두께가 결정화 특성에 미치는 영향, 결정결함, 결정크기에 대하여 연구하였다. 형성된 다결정 실리콘 씨앗층 막의 특성은 OM, SEM, FIB, EDS, Raman spectroscopy, XRD, EBSD 을 이용하여 분석하였다. 그 결과 산화막의 두께가 증가할수록 결함도 함께 증가하였다. 16nm 두께의 산화막 구조에서 <111> 방향의 우선배향성을 가진, $10{\mu}m$의 sub-grain 결정립을 갖는 씨앗층을 제조 하였다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.104-109
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• 2001

A 355 nm (3.5 eV) neodymium:yttrium aluminum gamet laser, produced by a harmonic generator, was used to create silver metallic particles as seeds for nucleation in photosensitive glass containing Ag+ and Ce3+ ions. The pulse width and frequency of the laser were 8 ns and 10 Hz, respectively. Heat treatment was conducted at 570 C for 1 h, following laser irradiation, to produce crystalline growth, after which a LiAlSi3O8 crystal phase appeared in the laser-irradiated Li2O A1203 SiO2 glass. For the Present study, we compared the effect of laser-induced crystallization on glass crystallization with that of spontaneous crystallization by heat treatment.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2012.05a
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• pp.429-434
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• 2012

Ignition delay of micro/nano aluminum particles is caused by aluminum oxide shell. The method of minimizing this ignition delay is proposed in the study. Generating and heating of particles are processed at the same time. As soon as heated particles are produced, they immediately contact with oxygen. Chemical reaction is induced on the contact surface instead of crystallization of oxide shell. Finally particles are ignited. Aluminum particles are generated by laser ablation on an aluminum plate using Nd:YAG pulse laser. Injected particles are confirmed through visualization of particles using scattering method. $CO_2$ continuous laser supplies heat to aluminum plate and generated particles. Trace of burning particles is observed in the experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.8
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• pp.692-697
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• 2016

This study investigated the effect of surface roughness of zinc oxide (ZnO) layer on the growth of polycrystalline Si layer via an Al-induced layer exchange process. It was found that the growth rate, grain size, crystallization fraction, and preferential orientation of the polycrystalline Si layer were strongly influenced by the surface roughness of the underlying ZnO layer. As the roughness of the ZnO surface increased, a higher growth rate (~40 min) and preferential Si (100) orientation were obtained because of the spatial concentration fluctuations in the Al-Si alloy, induced by the surface roughness of the underlying ZnO layer.