• Journal of Powder Materials
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• v.26 no.4
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• pp.327-333
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• 2019

In this study, a process is developed for 3D printing with alumina ($Al_2O_3$). First, a photocurable slurry made from nanoparticle $Al_2O_3$ powder is mixed with hexanediol diacrylate binder and phenylbis(2,4,6-trimethylbenzoyl) phosphine oxide photoinitiator. The optimum solid content of $Al_2O_3$ is determined by measuring the rheological properties of the slurry. Then, green bodies of $Al_2O_3$ with different photoinitiator contents and UV exposure times are fabricated with a digital light processing (DLP) 3D printer. The dimensional accuracy of the printed $Al_2O_3$ green bodies and the number of defects are evaluated by carefully measuring the samples and imaging them with a scanning electron microscope. The optimum photoinitiator content and exposure time are 0.5 wt% and 0.8 s, respectively. These results show that $Al_2O_3$ products of various sizes and shapes can be fabricated by DLP 3D printing.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.97-102
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• 2006

Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were $10^{-8}\;and\;10^{-4}$, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than $4{\mu}m$ is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole. $SiO_2$ nano dot array was formed by ion irradiation into thin film AAO on $SiO_2$ film. This was confirmed by scanning electron microscopy that the $SiO_2$ nano dot array is similar to AAO hole array.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.21-26
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• 2014

Red clay has been used for making rakuyaki for the past 400 years. Because the resources for red clay in Japan are being depleted, many potters in Japan began to develop new materials which can replace red clay. In this study, It is analyzed that the chemical and physical properties of red clay from Shigaraki (Shiga, Japan), and developed a novel engobe which can be used for making Rakuyaki instead of Shigaraki red clay. Results from Raman spectroscopic examination showed that ferric oxide content in Shigaraki red clay is 9.4 % (Goethite 5 %, Wustite 4.4 %), and that the mechanism of red color development by the firing at $900^{\circ}C$ for 10 min is the chemical transformation of Goethite into Hematite, and the subsequent formation of solid solution with Alumina and Silica. To make similar ferric oxide content to that of Shigaraki red clay, we added 5 g of Goethite and 9 g of Wustite to 100 g of White kaolin from Hadong area (Gyeongsangnam-do, Korea). The $L^*a^*b^*$ color scale of the mixture was 56.83, 27.22, and 23.28, respectively, and stable red color was successfully developed under the same firing condition used for Shigaraki red clay.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.497-502
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• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.62-68
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• 2000

Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.657-662
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• 1999

Mn-Ni oxide thin films for NTC thermistor application were sputtered on alumina substrates at $320^{\circ}C$ Effects of various oxygen partial pressures and annealing temperatures on the microstructure, crystal phase, resistivity and B constant were investigated. In general, microstructure of the films deposited was columnar grain structure. After annealing at $700^{\circ}C$, the microstructure was begun to transform to equiaxed grain structure. Most of the phases were mixture of cubic spinel and $Mn_2$$O_3$. As the oxygen concentration increased, the resistivity and B constant were greatly decreased, and these values become low and stable after annealing between $600^{\circ}C$ and $700^{\circ}C$.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.5
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• pp.26-34
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• 2008

The performance of several catalysts to decompose the high test peroxide (HTP) was described in this paper. Manganese oxide, Platinum and Iridium were coated on the gamma alumina. The catalyst activity as active materials was measured at the flask reactor. The response time of various catalysts was also measured with a 50 Newton class thruster. $Ir/Al_2O_3$ that showed the best activity in the flask reactor and response time at the thruster, failed the reaction when continuous mode test was carried out with the thruster. $Pt/Al_2O_3$ and $MnO_2/Al_2O_3$ can be substitutes to decompose the HTP. In addition, for larger thruster, $MnO_2/Al_2O_3$ can be a good catalyst because its cost is below 5 % of $Pt/Al_2O_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.