• Applied Chemistry for Engineering
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• v.20 no.2
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• pp.191-194
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• 2009

Porous alumina prepared by anodization has been widely studied since it shows very regular nanostructures at inexpensive prices. In this article, porous alumina is obtained by anodization of aluminum in the oxalic acid. After the first formed oxide is selectively removed from the aluminum substrate, the hexagonal nanostructures on the fresh aluminum are converted to nanodots by the second anodization in boric acid. Nanodots are arrayed in the convex of the hexagonal nanostructures. The optimization condition for the fabrication of nanodots with a height of 20 nm is investigated in detail. Subsequently, a gold film is deposited on the nanodots, resulting in the formation of gold nanodots arrays which are probably interesting substrate for biosensor applications.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.401-406
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• 2015

Getter is a class of materials used in absorbing gases such as hydrogen and moisture in microelectronics or semiconductor devices to operate properly. In this study, we developed a new device structure consisting of porous anodized alumina films on textured silicon wafer, which have cost efficiency in materials and processing aspects. Anodic aluminum oxide (AAO) with controlled pore sizes can be applied to a high-efficiency moisture absorber due to the high surface area and OH- saturated surface property. The moisture sorption capacity was 2.02% (RH=35%), obtained by analyzing isothermal adsorption/desorption curve.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.625-625
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• 1991

The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

• Journal of Conservation Science
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• v.6 no.1 s.7
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• pp.3-14
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• 1997

Twelve Punchong sherds collected in Hakbongni, Kongju where the well known iron-painted on white slip were manufactured from late 15C to early 16C were analyzed for their composition and microstructure. The composition of the body was analyzed by X-ray fluorescence and that of glaze by electron probe micro-analyzer. Microstructure was observed by optical microscope, polarizing microscope, EPMA, and X-ray diffractometer. The results of composition of body and glaze of Hakbongni were compared with those of Punchong from Yongsuri, Boryong which was close to Hakbongni. The composition of body and glaze of these two areas were compared by principal component analysis using SPSS program. Hakbongni bodies have higher silica and flux materials but lower alumina and their glaze have higher silica, soda, iron oxide but lower alumina, calcia. Hakbongni punchong itself is divided into two groups. Their glaze is lime type. There are many remnant minerals, such as quartz, large feldspar mass with partially melted surrounding area, albite, biotite, and iron-oxide. From such a microstructure we can assume that preparation of raw material was rather crude and firing temperature quite low. Iron-painted material is identified as Mg/Fe/Al spinel by composition analysis and XRD pattern.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.1
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• pp.35-39
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• 2019

To date, porous alumina structures have been implemented by electrochemical anodization technique. The anodizing methods can easy to make a porous aluminum oxide film with a regular arrangement, but oxide film with complex structure type such as pillar-on-pore is relatively difficult to implement. Therefore, this study aims to observe the change of anodized oxide pore size, thickness, and structure in a phosphoric acid solution according to applied anodization voltage conditions. For the implementation of hybrid composite oxide structures, it is possible to create by modulating anodization voltage. The experimental conditions were performed at the applied anodization voltage of 100 V and 120 V in 10% phosphoric acid solution, respectively. The experimental results were able to observe the structure of oxides in the form of porous and composite structures (pillar-on-pore), depending on each condition.

• Journal of Korea Foundry Society
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• v.35 no.5
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• pp.114-119
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• 2015

This paper reports the effect of a refractory crucible type on the microstructure of duplex stainless steel (DSS) cast with the addition of gadolinium using air-induction melting. Grade 4A DSSs with 1 wt% of gadolinium (Gd) were fabricated in various crucibles including alumina ($Al_2O_3$), magnesia (MgO), calcia (CaO) coated with yttria ($Y_2O_3$) and graphite. The standard free energies of the formation of calcium and yttrium oxide were lower than those of gadolinium oxide and other crucible elements based oxide. The yield of Gd in DSS using $Al_2O_3$, MgO, CaO-coated $Y_2O_3$ and graphite was 5, 19, 83 and 96%, respectively. As Gd yield increased, the amount of Gd-based inclusions increased, the size of the inclusions were reduced, and the inclusions became evenly distributed.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.473-480
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• 2009

In order to provide the mechanism of nozzle clogging, recovered nozzles for high strength steel grade were examined carefully after continuous casting. The thickness of clogged material in SEN is increased in the following order: from the bottom to the top of the nozzle, upper part of slag line, and the pouring hole. Nozzle clogging material begins to form due the adhesion of metal to nozzle wall, the decarburization, and reduction of oxide in the refractory by Al and Ti in the melt. The reduction of oxide in the refractory by Al and Ti improves the wettability of the melt on the refractory and forms a thin Al-Ti-O layer. Metal containing micro alumina inclusions is solidified on the Al-Ti-O layer, and the solid layer grows due to the heat evolution through the nozzle wall. Thermodynamic calculation has been made for the related reactions. The effect of superheat to the nozzle clogging is discussed on ultra low carbon steel and low carbon steel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.133-140
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• 2004

We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.1
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• pp.27-39
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• 1967

The fabrication of the barium titanate ceramic capcitors has been studied. The effects of the impurities for alumina and silica upon mechanical and electrical characteristics have been examined in detail. The preparation of equimolar titanium oxide and barium carbide in addition two percent of alumina and point two five perdcent of silica has shown the best results. This is fired up to thirteen hundred degrees Celsius with the rate of two hundred degrees Celsius per hour and soaked three hous at this temperature. The dielectric constant of this sample is approximately equal with the standard and theoretical values at room temperature. The insulation resitances of the most fabricated capacitors are in the order of twenty thousand megohms, the dielectric constant and the dissipation factor are almost flat up to just below of curie temperature, and the porosities of the most ceramics are less than point one percent and well close or equal to zero percent.