• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.154-157
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• 2012

We present the simultaneous growth of single-walled carbon nanotubes and graphene with the optimal conditions of the synthesizing parameters. The dense and vertically aligned SWNTs having the length of over 100 ㎛ was grown by 2 nm-thick Fe catalytic layer. From 650 ℃, the vertically well-grown SWNTs were obtained by increasing the temperature. The severallayered graphene was synthesized with the gas mixing ratio of 15 : 1(H2 : C2H2) at 650 ℃ and higher temperatures. With these optimal conditions, the vertically well-grown SWNTs and the several-layered graphene were synthesized simultaneously. The presence of SWNTs and the layer of graphene were verified by field emission scanning electron microscopy and high resolution transmission electron microscopy. From the result of this simultaneous synthesizing approach, the possibility of one step growth process of CNTs and grapheme could be verified.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.199-204
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• 2006

Carbon nanotube (CNT) mats grown by thermal chemical vapor deposition on a micromachined substrate with a chrome heater and a diaphragm were investigated as sensing materials of resistive gas sensors for nitrogen dioxide ($NO_{2}$) gas. The aligned CNT mats fabricated into mesh and serpentine shapes by the patterned cobalt catalyst layer. CNT mats showed a p-type electrical resistivity with decreasing electrical resistance upon exposure to $NO_{2}$. All sensors exhibited a reversible response at a thermal treatment temperature of $130^{\circ}C$ for about 5 minutes. The resistance change to $NO_{2}$ of the mesh-shaped CNT mats was larger than that of the serpentine-shaped CNT mats.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.499-500
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• 2010

• Journal of the Korean Society for Precision Engineering
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• v.24 no.6
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.

• Korean Journal of Materials Research
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• v.11 no.8
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• pp.697-702
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• 2001

Effects of ammonia treatment on the morphologies of the catalytic metal films and carbon nanotubes subsequently synthesized via a thermal chemical vapor deposition method were investigated. An optimally controlled thermo-chemical process of ammonia treatment gave rise to a morphology of a dense distribution of vertically aligned carbon nanotubes. $NH_3$ treatment is a crucial key process to obtain vertically aligned carbon nanotubes. However, it was realized by a simple $NH_3$ treatment during synthesis at temperatures of $800-900^{\circ}C$ without any extra process. The structure and morphology of carbon nanotubes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy.

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.168-172
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• 2009

In this paper, we present the carbon nanotube field-effect transistor(CNT-FET) with a double-gate structure. A Carbon nanotube film was aligned by the Langmuir-Blodgett technique and $SiN_x$ was deposited to protect from water, oxygen, and other contaminants. We measured the electrical characteristics of the proposed device as the function of the $V_{BG}$, $V_{TG}$. From this result, we can confirm that proposed device might be employed as a biosensor.

• Advances in nano research
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• v.16 no.5
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• pp.445-458
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• 2024

The objective of this paper is to present free vibration and static stability analyses of rotating composite beams reinforced with carbon nanotubes (CNTs) under uniform thermal loads. Beam structural equations and CNT-reinforced composite (CNTRC) beam formulations are derived based on Timoshenko beam theory (TBT). The temperature-dependent properties of the beam material, such as the elastic modulus, shear modulus, and material density, are assumed to vary over the thickness according to the rule of mixture. The beam material is modeled as a mixture of single-walled carbon nanotubes (SWCNTs) in an isotropic matrix. The SWCNTs are aligned and distributed in the isotropic matrix with different patterns of reinforcement, namely the UD (uniform), FG-O, FG-V, FG- Λ and FG-X distributions, where FG-V and FG- Λ are asymmetric patterns. Numerical examples are presented to illustrate the effects of several essential parameters, including the rotational speed, hub radius, effective material properties, slenderness ratio, boundary conditions, thermal force, and moments due to temperature variation. To the best of the authors' knowledge, this study represents the first attempt at the finite element modeling of rotating CNTRC Timoshenko beams under a thermal environment. The results are presented in tables and figures for both symmetric and asymmetric distribution patterns, and can be used as benchmarks for further validation.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1440-1441
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• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).