• Journal of Energy Engineering
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• v.2 no.3
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• pp.293-299
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• 1993

In order to investigate the effect of Al addition on the electrochemical performance and structural stability of porous Ni anode for molten carbonate fuel cell, porous Ni anodes containing Al up to 10 wt% were fabricated by the tape casting technique. In this study half-cell performance of the anodes was evaluated by anodic polarization in the simulated MCFC anode condition(650$^{\circ}C$ , 80% H$_2$＋20% CO$_2$). At the anodic current of 150 ㎃/$\textrm{cm}^2$, the polarizations for H$_2$oxidation of the anode was about 100 ㎷. The sintering and creep resistance of Ni-Al anodes was higher than those of the pure Ni anode. It was considered that the increase of sintering and creep resistance was due to the formation of Al$_2$O$_3$ on the surface of Ni particles.

• Journal of Welding and Joining
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• v.10 no.4
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• pp.213-221
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• 1992

Al$_{2}$O$_{3}$ ceramic coating layer by gas flame spraying was very porous, therefore it could not have wear and corrosion resistance at all. To get a dense and strong coating layer, a method to infiltrate an alloy into the pores of $Al_{2}$O$_{3}$ ceramic coating was investigated. Cu-Ti alloys, which had good wettability and reactivity with $Al_{2}$O$_{3}$ ceramic, were examined for infiltration. Infiltration of the alloys was performed in vacuum at 1100.deg.C. The melt of Cu-50 at % Ti alloy was well penetrated through the porous $Al_{2}$O$_{3}$ coating and tightly sealed the pores, unbounded area and microcracks in the coating. The alloy melt in the pores reacted with $Al_{2}$O$_{3}$ ceramic to produce a suboxide phase, Cu$_{2}$Ti$_{4}$O. This composite layer which was composed of $Al_{2}$O$_{3}$ and Cu$_{2}$Ti$_{4}$O phase had good microstructure and wear and corrosion resistance. Additionally, microstructures at interfaces between coating layers were greatly improved owing to the effect of vacuum heat treating.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.107-112
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• 2005

We present an AlGaN/GaN metal-insulator-semiconductor-heterostructure field effect transistor (MIS-HFET) with an $Al_2O_3-HfO_2$ laminated high-k dielectric, deposited by plasma enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited $Al_2O_3-HfO_2$ laminated layer was estimated to be as high as 15. The fabricated MIS-HFET with a gate length of 102 m exhibited a maximum drain current of 500 mA/mm and maximum tr-ansconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the $Al_2O_3-HfO_2$ laminated dielectric effectively passivated the surface of the device.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.550-554
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_x)TiO_3 + yAl_2O_3$ wt% (x=0.10, 0.15, 0.20, y=0~3.0) ceramics were fabricated by the mixed-oxide method, and their structural and dielectric properties were investigated with variation of composition ratio and $Al_2O_3$ doping content. As results of the X-ray diffraction and microstructure analysis, all BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with an increase of $Al_2O_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing $Al_2O_3$doping content. The dielectric loss is minimum at BSCT doped with 1.5wt% $Al_2O_3$content. The tunability was decreased with increasing an Ca content and the BSCT(50/40/10) specimen doped with 2.0wt% $Al_2O_3$content showed the maximum value of 4.2%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.137-143
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• 2006

The effects of Cu and Fe additions on the thermal stability, microstructure and mechanical properties of $Al_{85}-Ni_{8.5}-Mm_{6.5},\;Al_{84}-Ni_{8.5}-Mm_{6.5}Cu_1,\;Al_{84}-Ni_{8.5}-M_{m6.5}Fe_1$ alloys, manufactured by gas atomization, degassing and hot-extrusion were investigated. Gas atomization, with a wide super-cooled liquid region, allowed the alloy powders to exhibit varying microstructure depending primarily on the powder size and composition. Al hotextruded alloys consisted of homogeneously-distributed fine-grained fcc-Al matrix and intermetallic compounds. A substitution of 1 at.% Al by Cu increased the thermal stability of the amorphous phase and produced alloy microstructure with smaller fcc-Al grains. On the other hand, the same substitution of 1 at.% Al by Fe decreased the stability of the amorphous phase and produced larger fcc-Al grains. The formation of intermetallic compounds such as $Al_3Ni,\;Al_{11}Ce_3\;and\;Al_{11}La_3$ was suppressed by the addition of Cu or Fe. Among the three alloys examined, the highest Vickers hardness and compressive strength were obtained for $Al_{84}-Ni_{8.5}-M_{m6.5}Cu_1$ alloy, and related to the finest fcc-Al grain size attained from increased thermal stability with Cu addition.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.359-368
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• 2020

This study is aimed at improving the plasma resistance of Al₂O₃ ceramics on which plasma resistant YAS(Y₂O₃-Al₂O₃-SiO₂) frit is melt-coated using a simple heat-treatment process. For this purpose, the results of phase analysis and microstructural observations of the prepared YAS frits and the coating layers on the Al₂O₃ ceramics according to the batch compositions are compared and discussed with regard to the results of plasma resistance test. The prepared YAS frits consist of crystalline or amorphous or co-existing crystalline and amorphous phases according to the batch compositions, depending on the role and content of each raw material. The prepared YAS frit is melt-coated on the densely sintered Al₂O₃ ceramics, resulting in a dense coating layer with a thickness of at least ~ 80 ㎛. The YAS coating layer consists of crystalline YAG(Y₃Al₅O₁₂), Y₂Si₂O₇, and Al₂O₃ phases, and YAS glass phase. Plasma resistance of YAS coated Al₂O₃ ceramics is strongly dependent on the content of the YAG(Y₃Al₅O₁₂) and Y₂Si₂O₇ crystalline phases in the coating layer, especially on the content of the YAG phase. Comparing the weight loss of YAS coating ceramics with values obtained for commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the YAS coating ceramics is 6 times higher than that of quartz, 2 times higher than that of Al₂O₃, and 50 % of the resistance of Y₂O₃.

• Journal of the Mineralogical Society of Korea
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• v.17 no.2
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• pp.157-168
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• 2004

The surface chemical properties of aqueous kaolinite and halloysite were studied using a potentiometric titration experiment and a computer program FITEQL3.2. Among the surface complexation models a constant capacitance model was selected for this study. The 2 sites - 3 p $K_{a}$ s model, in which the surfaces were assumed to have tetrahedral and octahedral sites, was reasonable for the description of the experimental data. The surface charges of both minerals were negative above pH of 4. The higher the pH, the lower the proton surface charge densities of both minerals. The ≡ $SiO^{[-10]}$ site played an important role in cation adsorption in acid and neutral pH range; whereas the ≡ Al $O^{[-10]}$ site was in an alkaline pH range. The optimized intrinsic constants of kaolinite, p $K_{a2(Si)}$$^{int}$, p $K_{al(Al)}$$^{int}$ and p $K_{a2(Al)}$$^{int}$ were 4.436, 4.564, and 8.461 respectively, and those of halloysite were 7.852, 3.885, and 7.084, respectively. The total Si and Al surface sites concentrations of kaolinite were 0.215 and 0.148 mM, and those of halloysite were 0.357 and 0.246 mM. The ratio of Si and Al surface site densities ([≡SiOH]:[≡AlOH]) of both minerals was 1 : 0.69. The total surface site density of kaolinite, 3.774 sites/n $m^2$, was 1.6 times larger than that of halloysite, 2.292 sites/n $m^2$./TEX>.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.2
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• pp.285-291
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• 2016

In chemical-looping combustion, pure oxygen is transferred to fuel by solid particles called as oxygen carrier. Chemical-looping combustion process usually utilizes a circulating fluidized-bed process for fuel combustion and regeneration of the reduced oxygen carrier. The performance of an oxygen carrier varies with the active metal oxide and the raw support materials used. In this work, spraydried Mn-based oxygen carriers were prepared with different raw support materials and their physical properties and oxygen transfer performance were investigated to determine that the raw support materials used are suitable for spray-dried manganese oxide oxygen carrier. Oxygen carriers composed of 70 wt% $Mn_3O_4$ and 30 wt% support were produced using spray dryer. Two different types of $Al_2O_3$, ${\gamma}-Al_2O_3$ and ${\alpha}-Al_2O_3$, and $MgAl_2O_4$ were applied as starting raw support materials. The oxygen carrier prepared from ${\gamma}-Al_2O_3$ showed high mechanical strength stronger than commercial fluidization catalytic cracking catalyst at calcination temperatures below $1100^{\circ}C$, while the ones prepared from ${\alpha}-Al_2O_3$ and $MgAl_2O_4$ required higher calcination temperatures. Oxygen transfer capacity of the oxygen carrier prepared from ${\gamma}-Al_2O_3$ was less than 3 wt%. In comparison, oxygen carriers prepared from ${\alpha}-Al_2O_3$ and $MgAl_2O_4$ showed higher oxygen transfer capacity, around 3.4 and 4.4 wt%, respectively. Among the prepared Mn-based oxygen carriers, the one made from $MgAl_2O_4$ showed superior oxygen transfer performance in the chemical-looping combustion of $CH_4$, $H_2$, and CO. However, it required a high calcination temperature of $1400^{\circ}C$ to obtain strong mechnical strength. Therefore, further study to develop new support compositions is required to lower the calcination temperature without decline in the oxygen transfer performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.