• Title/Summary/Keyword: AlO barrier

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Effect of Pt on the High Temperature Stability of NiCoCrAlY or NiAl Bond Coat in the Thermal Barrier Coating System (NiCoCrAlY 및 NiAl bond coat를 사용한 Thermal Barrier Coating의 고온안정성에 미치는 Pt의 영향)

  • Ku Seongmo;Kim Gil Moo
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.375-381
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    • 2005
  • High temperature oxidation behavior of thermal barrier coating (TBC) system (IN738 substrate + NiCoCrAlY or NiAl bond coat with or without Pt + yttria stabilized zirconia) prepared by air plasma spray (APS) process has been studied in order to understand the effect of Pt addition to bond coat on the stability of TBC system. Specimens were oxidized in thermal cycling and isothermal oxidation test at $1100^{\circ}C$. The Pt addition in TBC system with NiCoCrAlY bond coat showed a longer life time compared to that without addition of Pt. Pt addition to TBC system is believed to help the formation of more stable thermally grown oxide, $Al_2O_3$, at the TBC/bond coat interface, leading to a longer lifetime of TBC system.

Sputtering법으로 제조한 OLED용 Barrier Layer의 특성평가

  • Jeong, Eun-Uk;Kim, Hoe-Bong;Lee, Jong-U;Jo, Yeong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.163-163
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    • 2012
  • 차세대 모바일용 전자디스플레이로 각광받고 있는 FOLED (flexible organic light emitting display)의 연구에서 display의 신뢰성과 수명은 매우 중요한 연구 테마이다. OLED의 수명단축에 영향을 미치는 요소는 수분에 의한 열화가 가장 치명적이다. Barrier layer를 통한 수분의 주요 침투경로는 pin-hole과 void 등과 같은 defect에 의한 것으로 보인다. 수분의 침투 경로를 제어하는 OLED용 barrier layer의 요구조건은 WVTR (water vapor transmission rate)이 $10^{-6}g/m^2{\cdot}day$ 이하로 낮아야 한다. Barrier layer가 가져야 할 핵심적인 조건은 유연성을 가지면서 동시에 WVTR 값이 매우 낮아야 하는데, 아직까지 이를 만족하는 barrier layer의 개발은 아직 덜된 실정이다. 본 연구에서는 PET (polyethylene terephthalate) 기판에 sputtering법으로 barrier layer를 제조하였다. 증착에 이용한 타겟은 두가지 종류인 Al과 $Al_2O_3$를 사용하였으며, 다층박막으로 제조하였다. 제조된 barrier layer의 수분침투 특성은 WVTR의 측정으로, 유연성의 평가는 in-situ fatigue test를 수행하여 측정하였다. 종합적인 특성 평가를 위하여 SEM과 AFM (atomic force microscope) 관찰도 하였다.

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MR Characteristics of $Al_2O_3$ Based Magnetic tunneling Junction ($Al_2O_3$를 절연층으로 이용한 스핀 의존성 터널링 접합에서의 자기저항 특성)

  • 정창욱;조용진;정원철;조권구;주승기
    • Journal of the Korean Magnetics Society
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    • v.10 no.3
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    • pp.118-122
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    • 2000
  • MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.

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Effect of Ti Concentration on the Microstructure of Al and the Tunnel Magnetoresistance Behaviors of the Magnetic Tunnel Junction with a Ti-alloyed Al-oxide Barrier (Ti 첨가에 따른 Al 미세구조 변화 효과와 산화 TiAl 절연층을 갖는 자기터널접합의 자기저항 특성)

  • Song, Jin-Oh;Lee, Seong-Rae
    • Journal of the Korean Magnetics Society
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    • v.15 no.6
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    • pp.311-314
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    • 2005
  • We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

Poly(ethylene oxide)/AgBF4/Al(NO3)3/Ag2O Composite Membrane for Olefin/Paraffin Separation (올레핀/파라핀 분리를 위한 poly(ethylene oxide)/AgBF4/Al(NO3)3/Ag2O 복합체 분리막)

  • Jeong, Sooyoung;Kang, Sang Wook
    • Membrane Journal
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    • v.27 no.4
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    • pp.313-318
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    • 2017
  • For the separation of olefins/paraffins, $Poly(ethylene oxide)(PEO)/AgBF_4/Al(NO_3)_3/Ag_2O$ composite membranes were prepared. When $Ag_2O$ was introduced, the initial selectivity and permeance of composite membranes were observed to be 13.7 and 21.7 GPU, respectively. The increase in performance compared to the initial performance of $PEO/AgBF_4/Al(NO_3)_3$ membrane (selectivity 13 and permeance 7.5 GPU) was thought to be due to the increase of Ag ion activity due to the addition of $Ag_2O$. However, performance degradation over time was observed, which was thought to be due to the polymer matrix PEO. Since the PEO polymer could not stabilize the $Ag_2O$ particles, the $Ag_2O$ particles becmae aggregated together as the solvent evaporates, and $Ag_2O$ acts as a barrier. As a result, the permeance decreases over time.

Effect of Insertion of Hf layer in Al oxide tunnel barrier on the properties of magnetic tunnel junctions (알루미늄 산화물 절연막에 하프늄의 첨가가 자기터널접합의 특성에 미치는 영향)

  • Lim, W.C.;Bae, J.Y.;Lee, T.D.;Park, B.G.
    • Journal of the Korean Magnetics Society
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    • v.14 no.1
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    • pp.13-17
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    • 2004
  • We have investigated the effect of Hf insertion in the Al oxide tunnel barrier on the properties of magnetic tunnel junctions (MTJs). MTJs with Hf inserted barrier show the higher tunnel magnetoresistance (TMR) ratio and less temperature and bias voltage dependence of TMR than MTJs with a conventional Al$_2$O$_3$ barrier. The enhancement of TMR ratio and the reduction of the temperature and bias voltage dependence might be due to the reduction of defects in the barrier. Al-Hf oxide was formed by depositing Al and Hf simultaneously, and oxidizing the compound films. The TMR ratio of 36% was almost the same value as that with Hf inserted barrier. This implies that the inserted Hf layers mixed with Al layers during deposition or oxidation, and they might form Al Hf oxide barriers. This compound Al Hf oxide formation may be responsible to reduction of defect concentration which enhanced the TMR ratio and reduced temperature and bias-voltage dependence.

Feasibility on Fillers for Bismate Glass System Used for Etching Process in Barrier-Ribs

  • Sung, Woo-Kyung;Jeon, Jae-Sam;Chong, Eu-Gene;Kim, Hyung-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.938-941
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    • 2006
  • It is suggested that the bismate glass system is one of alternatives to the lead glass for barrier-ribs in PDP. Moreover it is necessary to investigate the resultant change in properties with addition of ceramic fillers. Glass frit was selected to be a $Bi_2O_3-ZnO-B_2O_3-Al_2O_3$ and two fillers, ZnO and $Al_2O_3$ were added into a glass matrix with the different content. We investigated thermal, chemical properties of bismate glass system with two different fillers. We confirmed that addition of fillers effects properties of composites such as the thermal expansion coefficient, etching mechanism.

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A Study on the Effects of the Thickness of Top Coat on the Thermal Stresses of a Sprayed Thermal Barrier Coating (용사 열차폐 코팅층의 두께가 열응력에 미치는 영향)

  • 김형남;양승한
    • Proceedings of the KWS Conference
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    • 2004.05a
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    • pp.223-225
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    • 2004
  • Based on the principle of complementary energy an analytical method is developed for determining thermal stress distribution in an thermal barrier coating. This method gives the stress distributions which satisfy the stress-free boundary conditions at the edge. Numerical examples are given in order to verify the method and to investigate the thickness effects of the ZrO$_2$-8wt%Y$_2$O$_3$ top coat on the integrity of thermal barrier coating consisted of IN738LC substrate and MCrAlY bond coat.

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Etching Mechanism of Barrier Ribs in Plasma Display Panel (플라즈마 디스플레이 패널의 격벽형성의 에칭 메커니즘)

  • Chong, Eu-Gene;Jeon, Jae-Sam;Sung, Woo-Kyung;Kim, Hyung-Sun
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.3 s.16
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    • pp.33-36
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    • 2006
  • To produce a fine structure with uniform surface of barrier ribs in PDP, acid etching process has been used in manufacture process. It is necessary to understand the mechanism of etching, particularly on the interface of ceramic fillers and matrix glass. We investigated the effect of ceramic fillers (ZnO, $Al_2O_3$) on the microstructure of borate glass system to find an etching mechanism of barrier ribs. The barrier ribs was etched with several steps, dissolving a small amount of residual glass, taking out alumina fillers, and removing a cluster type of ZnO fillers and glass matrix.

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