• Title/Summary/Keyword: AlO

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Properites of transparent conductive ZnO:Al film prepared by co-sputtering

  • Ma, Hong-Chan;Lee, Hee-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.106-106
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    • 2009
  • Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

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Fabrication of $Al_2O_3$/SiC Hybrid-Composite ($Al_2O_3$/SiC Hybrid-Composite의 제조)

  • Lee, Su-Yeong;Im, Gyeong-Ho;Jeon, Byeong-Se
    • 연구논문집
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    • s.26
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    • pp.103-112
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    • 1996
  • $Al_2O_3/SiC$ Hybrid-Composite has been fabricated by conventional powder process. The addition of $\alpha-Al_2O_3$ as seed particles in the transformation of $\gamma-Al_2O_3 to $\alpha-Al_2O_3$ provided a homogeneity of the microstructure, resulting in increase of mechanical properties. The grain growth of $Al_2O_3$ are significantly surpressed by the addition of nano-sized. SiC particles, increasing in fracture strength. The addition of SiC plates to $Al_2O_3$ nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC plates with nitrides such as BN and /SiC$Si_3N_4$ enhanced fracture toughness much more than uncoated SiC plates by inducing crack deflection.

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Effect of Al Alloy Content on Processing of Reaction-Bonded Al2O3 Ceramics Using Al Alloy Powder

  • Lee, Hyun-Kwuon
    • Korean Journal of Materials Research
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    • v.25 no.5
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    • pp.215-220
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    • 2015
  • The effect of Al content on the processing of reaction-bonded $Al_2O_3$ (RBAO) ceramics using 40v/o ~ 80v/o Al-Zn-Mg alloy powder was studied in order to improve traditional RBAO ceramic processes that use ~ 40v/o pure Al powder. The influence of high Al content in starting $Al_2O_3$-Al alloy powder mixtures on its particulate characteristics, reaction-bonding, microstructure, physical and mechanical properties was revealed. Starting $Al_2O_3$-Al alloy powder mixtures with 40v/o ~ 80v/o Al alloy powder were milled, reaction-bonded, post-sintered, and characterized. With an increasing Al alloy content, the milling efficiency of Al alloy powder was lowered, resulting in a larger particle size after milling. However, in spite of the larger particle size of Al alloy powder, the oxidation, i.e., reaction-bonding, of the Al alloy was successfully completed via solid and liquid state oxidation, in which the activation energy of the oxidation was nearly the same regardless of Al alloy content. After reaction-bonding and post-sintering at $1600^{\circ}C$, RBAO ceramics from 80v/o Al alloy content showed a relative density of ~97% and a flexural strength of 251 MPa compared to ~ 96% and 353 MPa for RBAO ceramics from 40v/o Al alloy content, respectively. The lower flexural strength at 80v/o Al alloy content was due to the weak spinel phase that formed from Zn, Mg alloying elements in Al.

Sintering Properties of Renewed ${Al_2}{O_3}$Ceramics with Particle Size and Addition Amount of Recycling Powder (재활용원료의 첨가량과 입경에 따른 재생 ${Al_2}{O_3}$ 세라믹스의 소결 특성)

  • 신대용;한상목;김경남
    • Journal of the Korean Ceramic Society
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    • v.38 no.12
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    • pp.1123-1131
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    • 2001
  • The sintering behaviors of the renewed $Al_2$O$_3$ceramics were investigated as functions of the addition amount and particle size of recycling $Al_2$O$_3$powder, such as crushed powder of structural $Al_2$O$_3$ceramics and waste $Al_2$O$_3$adsorbent, were investigated. Pure $Al_2$O$_3$sample was fabricated by sintered at 1,$650^{\circ}C$ for 5h and it was crushed into powder (-40${\mu}{\textrm}{m}$and +40${\mu}{\textrm}{m}$ in particle size) by thermal shock treatment and crushing. Then, 10~50wt% of crushed $Al_2$O$_3$powder and waste $Al_2$O$_3$adsorbent were mixed with pure $Al_2$O$_3$powder and were subjected to re-sintering to renewed $Al_2$O$_3$sample. The density and the 3-point bending strength increased with increasing the sintering temperature without regard to the addition amount and particle size of recycling $Al_2$O$_3$powder, and that of the samples at the same sintering temperature decreased with increasing the addition amount and particle size of recycling $Al_2$O$_3$powder. Samples over 200 Mpa of 3-point bending strength were obtained by mixing ~30wt% of crushed $Al_2$O$_3$powder(-40${\mu}{\textrm}{m}$), ~20wt% of crushed $Al_2$O$_3$powder (+40${\mu}{\textrm}{m}$) and 10wt% of waste $Al_2$O$_3$adsorbent. 5~20wt% of waste glass powder containing renewed $Al_2$O$_3$samples for densification were fabricated by sintered at 1200~1$650^{\circ}C$ for 5h. The temperature of maximum density and 3-point bending strength decreased with increasing the addition amount of waste glass powder, however, these samples at above 140$0^{\circ}C$ showed lower density and bending strength than renewed $Al_2$O$_3$samples. The addition of waste glass powder did not improved the densification of renewed $Al_2$O$_3$sample.

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Antioxidation mechanism of Al metal powders on $Al_2O_3-C$ refractory ($Al_2O_3-C$계 내화물에서 알루미늄 금속분말의 산화억제 메카니즘)

  • 류정호;임창성;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.1
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    • pp.97-105
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    • 1998
  • Antioxidation mechanism of Al metal powders on $Al_2O_3-C$ refractory was investigated in temperature range from 800 to $1400^{\circ}C$. The addition of 5 wt% Al metal powders suppressed the oxidation of carbon in $Al_2O_3$-C sample. The carbons were distributed uniformly on the surface and the interface of the $Al_2O_3$-C-Al. Reaction products of $Al_4C_3$ and AIN were found with a composition of Al-C at temperatures between 800 and $1200^{\circ}C$ and transformed to $Al_2O_3$ above $1400^{\circ}C$. Cavity structures related to the to the formation of $Al_4C_3$ were observed for the AI-C after heating at $1000^{\circ}C$ ofr 1 hour. Thermodynamic mechanism was considered to discuss the formation $Al_4C_3$, AlN and their transformation to $Al_2O_3$, which leads to the effect of oxidation resistance.

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Sputtering Yield and Secondary Electron Emission Coefficient(${\gamma}$) of the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ Thin Film Grown on the Cu Substrate by Using the Focused Ion Beam (Cu 기판위에 성장한 MgO, $MgAl_2O_4$$MgAl_2O_4/MgO$ 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정)

  • Jung K.W.;Lee H.J.;Jung W.H.;Oh H.J.;Park C.W.;Choi E.H.;Seo Y.H.;Kang S.O.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.395-403
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    • 2006
  • It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

Fabrication of $Al_2O_{3p}/Al$ composites by in-situ Reaction Process of Molten Al (In-situ 반응에 의한 $Al_2O_{3p}/Al$기 복합재료의 제조)

  • 김재동;정해용;고성위
    • Composites Research
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    • v.12 no.3
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    • pp.36-44
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    • 1999
  • The fabrication process of $Al_2O_{3p}/Al$ composite by in-situ process was investigated. The effects of processing variables such as addition type and content of Mg, processing temperature and time on the infiltration behavior of molten Al, microstructure and hardness were investigated. When the pure Al was infiltrated into mixtures of Mg and $Al_2O_3l$ powder, processing temperature required to spontaneous infiltration was decreased, and the content of Mg was the most powerful variable for infiltration of molten Al. But when the Al-Mg alloy was infiltrated into $Al_2O_3l$ particles, infiltration ratio indicated nearly same value regardless of Mg content in alloy and processing temperature, and critical processing temperature required to spontaneous infiltration was $800^{\circ}C$. The $Al_2O_{3p}/Al$ composites which were fabricated by mixtures of Mg and $Al_2O_3l$ powders resulted in high hardness value, but hardness values were scattered due to non uniform dispersion of $Al_2O_3l$ particles by excessive reaction of Mg.

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Effects of MgO content of Spinel on the Reaction of Spinel with CaO-Al$_2$O$_3$-SiO$_2$ Slag (CaO-Al$_2$O$_3$-SiO$_2$계 슬래그와 스피넬의 반응에 미치는 스피넬중의 MgO함유량의 영향)

  • 조문규;홍기곤
    • Journal of the Korean Ceramic Society
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    • v.36 no.4
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    • pp.410-416
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    • 1999
  • The reactivity of three kinds of spinels which CaO-Al2O3-SiO2 slag was investigated in terms of mineral phases and microstructures. New crystal products were not formed by reaction of 12CaO.7Al2O3 in the slag with spinels and free MgO components was preferenctially dissolved into slag for MgO-rich spinel and stoichiometric spinel. Meanwhile mineral phase was changed from 12CaO.7Al2O3 to CaO.Al2O3 to CaO.2Al2O3 finally to CaO.6Al2O3 having high melting point for Al2O3 -rich spinel. The Fe-oxide component of the slag was taken up by only stoichiometric spinel grains within the spinel clinker and the trapped amount of Fe-oxide was independent of MgO content of MgO in spinel clinker the more th resistance to slag corrosion but the less resistance to slag penetration.

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A Study on the Forming of Solid Solution in CaO.MgO.$2SiO_2-Al_2O_3$ System (CaO MgO.$2SiO_2-Al_2O_3$ 계의 고용체 생성에 관한 연구)

  • 안영필;김복희
    • Journal of the Korean Ceramic Society
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    • v.20 no.1
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    • pp.25-30
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    • 1983
  • This experiment was studied in the system of (1-x) CaO MgO $2SiO-Al_2O_3$ to investigate forming of solid solution. The technique empolyed was the well known water-quenching method. Differential thermal analysis of the each glass water quenched indicated that under 30 mole% $Al_2O_3$ was lowered with increasing of the amount of $Al_2O_3$ It was supposed by X-ray diffraction patterns of each specimen sintered at various temperature that only solid solution was formed under the 30mole % $Al_2O_3$ compositions solid solution and anorthite were formed at the 20mole% $Al_2O_3$ composition anorthite solid solution and spinel$(MgAl_2O_4)$ were formed over the 40mole% $Al_2O_3$ compositions. The maximum density and thermal expanison coefficient was 2.89g/cm 7.74x106./C$^{\circ}$ respectively in the composi-tion of 10 mole% $Al_2O_3$ . All the specimens showed linear thermal expansion behavior. Microhardness was as high as 850kg/nm2 in the composition of 5, 10, 20 mole % $Al_2O_3$ and dielectric constant was 7.3-6.9.

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Effect of CuO and $Al_2O_3$ Addition on the Electrical Conductivity of ZnO (ZnO의 전기전도도에 미치는 CuO 및 $Al_2O_3$의 첨가영향)

  • 전석택;최경만
    • Journal of the Korean Ceramic Society
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    • v.32 no.1
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    • pp.106-112
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    • 1995
  • In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.

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