• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.210-220
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• 1989

The properties of the powder of Al2O3-15v/o ZrO2(＋3m/o Y2O3) system prepared by co-precipitation method at the pH values of 7, 9, 10 and 11 were investigated. Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Zirconium hydroxide decreased the specific surface area of aluminum hydroxide of AlOOH type, while increased the specific surface area of aluminum hydroxide of Al(OH)3 type, and formed co-network structure of Al-O-Zr type with the aluminum hydroxides. The rate of transition to $\alpha$-Al2O3 from co-precipitated materials occurred in the order of 7≒10, 9 and 11 of pH values. Al2O3 and ZrO2 interacted to bring about coupled grain growth, and the growth of ZrO2 crystallite size rapidly occurred within $\theta$-Al2O3 matrix. Segregation did not occur in the system Al2O3-15v/o ZrO2(＋3m/o Y2O3) and Y2O3 acted as a stabilizer to ZrO2. The lattice strain of tetragonal ZrO2 was increased by the constraint effect of Al2O3 matrix.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.428-433
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• 1999

An objective of this study is to compare the characteristics of coating layer of plasma sprayed fine $Al_2O_3$ and those of layer by commercial $Al_2O_3$(Metco 105). The microstructure of fine $Al_2O_3$ coating layer was denser compared with commercial $Al_2O_3$ coating layer. The surface roughness$(R_a)$ of the layer by the fine $Al_2$O$_3$ was lower compared with that of commercial $Al_2O_3$. Thickness of splat for fine $Al_2O_3$ was $1.4\mu\textrm{m}$ while the commercial $Al_2O_3$ was $3.53\mu\textrm{m}$. The main phase existing in coating layer was of $\gamma-Al_2O_3$ and the fraction of $\alpha-Al_2O_3$ in fine $Al_2O_3$ coating layer was 8.39% and that of commercial $Al_2O_3$ was 13.79%. Microhardness was no great difference between the fine and commercial $Al_2O_3$ but deviation of the fine $Al_2O_3$ coating layer was relatively large. Accordingly, the strength of splat of the coating was expected that fine $Al_2O_3$was lower than commercial $Al_2O_3$ powder.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1080-1085
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• 2001

Dielectric properties and leakage current characteristics of 100 nm-thick $Ta_2O_5/Al_2O_3$multilayer thin films, which were fabricated by reactive sputtering of$Al_2O_3$and$Ta_2O_5$ successively on top of each other for total 9 layers, have been investigated with variation of the$Al_2O_3$content$(i.e,\;Ta_2O_5/Al_2O_3 \;thickness\;ratio)$.$Ta_2O_5/Al_2O_3$films were amorphous regardless of the$Al_2O_3$content. With increasing the$Al_2O_3$content from 0% to 100%, refractive index of the $Ta_2O_5/Al_2O_3$films decreased linearly from 2.03 to 1.56 and dielectric constant was lowered from 23.9 to 7.7 Variation of the dielectric constant with the$Al_2O_3$content was in good agreement with the behavior that was obtained by assuming parallel capacitors of$Al_2O_3$and Ta_2O_5$. Leakage current characteristics of $Ta_2O_5/Al_2O_3$ multilayer films were superior to those of $Ta_2O_5$ and$Al_2O_3$films. $Ta_2O_5/Al_2O_3$ films of 5% and 10%$Al_2O_3$content exhibited excellent leakage current densities which were lower than $10^{-7} A/cm^2$ at 1MV/cm.

• Journal of the Korea Concrete Institute
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• v.28 no.2
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• pp.205-212
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• 2016

This research investigates the influence of ground granulated blast furnace slag (GGBFS) composition on the alkali-activated slag cement (AASC). Aluminum oxide ($Al_2O_3$) was added to GGBFS binder between 2% and 16% by weight. The alkaline activators KOH (potassium hydroxide) was used and the water to binder ratio of 0.50. The strength development results indicate that increasing the amount of $Al_2O_3$ enhanced hydration. The 2M KOH + 16% $Al_2O_3$ and 4M KOH + 16% $Al_2O_3$ specimens had the highest strength, with an average of 30.8 MPa and 45.2 MPa, after curing for 28days. The strength at 28days of 2M KOH + 16% $Al_2O_3$ was 46% higher than that of 2M KOH (without $Al_2O_3$). Also, the strength at 28days of 4M KOH + 16% $Al_2O_3$ was 44% higher than that of 4M KOH (without $Al_2O_3$). Increase the $Al_2O_3$ contents of the binder results in the strength development at all curing ages. The incorporation of AASC tended to increases the ultrasonic pulse velocity (UPV) due to the similar effects of strength, but increasing the amount of $Al_2O_3$ adversely decreases the water absorption and porosity. Higher addition of $Al_2O_3$ in the specimens increases the Al/Ca and Al/Si in the hydrated products. SEM and EDX analyses show that the formation of much denser microstructures with $Al_2O_3$ addition.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.385-390
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• 2010

We studied the optical characteristics of ZnO:Al and $Al_2O_3$ coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.463-468
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• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Journal of the Korean Ceramic Society
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• v.34 no.11
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• pp.1129-1138
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• 1997

Al2O3/20 vol%YAG composite containing equiaxed grains and Al2O3/20 vol%LaAl11O18 composite containing elongated grains were fabricated using Al2O3-Y2O3 composition and Al2O3-La2O3 composition, respectively, by hot-pressing. In order to investigate the influence of microstructural control of second phase on toughening effect of toughened ceramic composites, AE (acoustic emission) measurements have been coupled with fracture toughness experiments(SENB and SEPB method). A separation of the fracture toughness and analysis of toughening mechanism was possible using the AE technique. The fracture toughness of hot-pressed materials was estimated to be 3.2 MPam0.5 for monolithic alumina, 4.7 MPam0.5 for Al2O3/20 vol%YAG composite and 6.2 MPam0.5 for Al2O3/20 vol%LaAl11O18 composite. In monolithic Al2O3, toughening does not occur as a result of either microcracking or grain bridging, whereas, composites exhibit toughening effects by both microcracking in the frontal zone and gain bridging in the wake zone, resulting in an improvement of fracture toughness as compared with monolithic Al2O3. The fracture toughness of Al2O3/20 vol%LaAl11O18 composite is higher than that of Al2O3/20 vol%YAG composite. It may be attributed to the elongated microstructure of Al2O3/20 vol%LaAl11O18 composite, resulting relatively greater bridging effect.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.412-417
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• 2001

본 연구는 습식법으로 수산화 알루미늄과 티타니아를 출발물질로 하여 $Al_2$O$_3$-TiO$_2$복합분체를 제조하였으며, 2 mol의 Al(OH)$_3$분말에 대하여 TiO$_2$분말량을 1, 3, 5, 7, 9, 11 wt%로 첨가하여 $Al_2$O$_3$-TiO$_2$복합분체의 특성을 조사하였다. 제조된 $Al_2$O$_3$-TiO$_2$계 복합분체는 $700^{\circ}C$~140$0^{\circ}C$까지 하소하여 XRD 분석을 한 결과 100$0^{\circ}C$까지는 TiO$_2$(rutile)상과 η-Al$_2$O$_3$상이 공존하다가 110$0^{\circ}C$부터 130$0^{\circ}C$까지는 η-Al$_2$O$_3$에서 $\alpha$-Al$_2$O$_3$로의 상전이가 일어나서 $\alpha$-Al$_2$O$_3$상과 TiO$_2$(rutile)상이 나타났으며 하소온도 140$0^{\circ}C$, TiO$_2$첨가량이 5 wt%일 때부터 $Al_2$TiO$_{5}$가 생성되기 시작하였다. TiO$_2$첨가량에 따른 비표면적값은 첨가량이 7 wt%까지는 감소하였으나 그 이상 첨가시 증가하였다. 입도분석 결과 평균입경은 15.74~23.21$mu extrm{m}$로서 TiO$_2$첨가량이 3 wt%일 때 가장 작은 값을 가졌으며 TiO$_2$첨가량은 5 wt% 이상부터 점차 감소하였다.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.719-728
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• 1992

ZrO2/Al2O3-Mullite composites were prepared by infiltration of the silica sol to the porous ZrO2/Al2O3 bodies. The porous ZrO2/Al2O3 bodies for infiltration were fabricated using ZrO2 (20wt%)/Al2O3 composite powders synthesized by the emulsion-hot kerosene drying method. The preparation of silica sols was conducted by the hydrolysis-peptization of an alcoholic TEOS solution. When ZrO2/Al2O3-Mullite and ZrO2/Al2O3 composites were sintered at 1$650^{\circ}C$ for 4 hrs, both of them showed an excellent sinterability. As the amount of mullite added in the composites increased, the ratio of the tetragonal phase of zirconia to the monoclinic phase at the room temperature became higher. It was known that values of the fracture toughness of the ZrO2/Al2O3-Mullite composites were about 5.48 MPa.m1/2 much larger than that of the ZrO2/Al2O3 system.