• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.309-315
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• 1982

$FeAl_2O_4$ was formed from the starting material of $Fe_2O_3$ and $Al_2O_3$ by controlling the oxygen partial pressure using $H_2-CO_2$ gas mixture, over the temperature range of 800~120$0^{\circ}C$. The formation mechanism of $FeAl_2O_4$ was found to be a second order chemical reaction, and the activation energy of formation was observed as 39.97 kcal/mole. Vaporization behavior of $FeAl_2O_4$ under $CO_2$ atmosphere was observed over the temperature range of 800~120$0^{\circ}C$. $FeAl_2O_4$ was vaporized by a second order chemical reaction and the activation energy was found to be 21.8kcal/mole. Electrical conductivity of $FeAl_2O_4$ was also measured.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.568-571
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• 2005

Highly transparent ZnO films with low resistivity for thin film solar cell applications were fabricated at low temperature by rf magnetron sputtering. Al-doped ZnO films were deposited on glass substrates at a substrate temperature of $200^{\circ}C$. electrical and optical properties of the ZnO:Al films were investigated in terms of the reparation conditions. The transmittance of the ZnO:Al films in the visible range is 90 %. The lowest resistivity of the ZnO:Al films is about $5.7\times10^{-4}$ $\Omega$ cm at the Al content of 2.5 wt% with the film thickness of 500 nm. After deposition, the smooth surface of ZnO:Al films were etched in diluted HCl (0.5%) to investigate the variation of electrical and surface morphology properties due to an textured surface.

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1224-1230
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• 2001

Single crystals of nanocomposite [GaO4Al12(OH)24(H2O)12][Al(OH)6Mo6O18]2(OH)${\cdot}$30H2O, 2, were obtained by the reaction between [GaO4Al12(OH)24(H2O)12]7+ and [Mo7O24]6- clusters in an aqueous solution, analogously to the [AlO4Al12(OH)24(H2O)12][Al(OH)6Mo6O18]2(OH)${\cdot}$29.5H2O nanocomposite, 1. The crystal structure of 2 was determined by single crystal x-ray diffraction; space group $C2}c$ (No. 15), a = 27.418(2) $\AA$, b = 15.647(2) $\AA$, c = 23.960(4) $\AA$, $\beta$ = $102.850(9)^{\circ}$, V = 10,021.5(20) $\AA3$ , Z = 4. Detailed analysis of the structural data show that the clusters are held by intimate hydrogen bondings of the surface O2- and OH- groups of the clusters as well as the ionic interactions between the oppositely charged cluster ions.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.172-175
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• 2003

ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.101-106
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• 2002

The microstructural changes of $NiCrAlY/ZrO_2$-$Y_2$$O_3$ composite coatings that were manufactured by air-plasma-spraying were investigated using XRD and SEM/EDS. The as-sprayed microstructure consisted of (Ni,Cr)-rich regions, ($ZrO_2$-$Y_2$$O_3$)-rich regions, and $Al_2$$O_3$-rich layers that were formed during spraying owing to the oxidation of Al in NiCrAlY. During oxidation between 900 and $1100^{\circ}C$ in air, Cr in the (Ni,Cr)-rich regions diffused toward the $Al_2$$O_3$-rich layers, and oxidized to be dissolved in $A1_2$$O_3$-rich layers. The oxidation of Ni in the (Ni,Cr)-rich regions was less distinct, except at the outer surface of the coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.418.1-418.1
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• 2016

Atomic layer deposition (ALD)를 이용하여 증착된 aluminum oxide ($Al_2O_3$)는 우수한 패시베이션 특성을 가지고 있다. $Al_2O_3$ 박막은 많은 수소를 가지고 있기 때문에 화학적 패시베이션에 의한 실리콘 표면을 패시베이션 할 수 있다. 또한 $Al_2O_3$는 강한 고정전하를 가져 전계 효과 패시베이션을 할 수 있다. 따라서 $Al_2O_3$ 박막을 태양전지에 적용할 경우 높은 효율을 기대할 수 있다. 실리콘 태양전지를 제작하기 위해 소성공정(> $800^{\circ}C$)은 필수이다. $Al_2O_3$ 박막은 많은 수소를 가지고 있기 때문에 소성공정시 수소가스를 방출하여 $Al_2O_3$ 박막에 블리스터를 형성시킨다. 이 블리스터는 $Al_2O_3/Si$ 계면에서 발생하여 패시베이션 특성을 감소시킨다. 블리스터를 억제하기 위해 수소의 양을 조절할 필요가 있다. 이 실험에서는 plasma-assisted atomic layer deposition (PAALD)으로 $Al_2O_3$를 증착하였다. PAALD의 RF power를 200 W부터 800 W까지 조절하여 $Al_2O_3$ 막에 포함되는 OH의 농도를 조절하였다. $Al_2O_3$ 박막에 포함되는 OH 농도는 X-ray Photoelectron Spectroscopy (XPS)를 이용하여 분석하였다. 열처리공정 후, 화학적 패시베이션에 의한 유효 반송자 수명 (${\tau}_{eff}$) 향상이 나타났다 소성공정 후 블리스터가 형성되지 않는 조건에서 화학적 패시베이션과 전계 효과 패시베이션에 의해 ${\tau}_{eff}$가 증가하였다. 블리스터가 형성되었을 때 기존 논문들과 같이 패시베이션 특성이 감소하였다. 패시베이션 특성의 감소는 블리스터에 의한 화학적 패시베이션의 감소 때문이며 전계 효과 패시베이션은 오히려 증가하였다. 이를 통해 고온에서 열안정성을 갖는 $Al_2O_3$ 박막을 만들었으며 블리스터가 형성되지 않았고 패시베이션 특성이 증가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.177-177
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• 2009

이동통신 시스템의 소형화 경량화 다기능화 추세에 따라 세라믹 모듈의 정밀도 및 집적도가 중요한 요소로 부각되고 있다. 이러한 모듈의 고집적화 추세에 대응하기 위하여 세라믹 소성시 수축율 제어가 필수적인 요소로 부각되고 있으며, 이에 따라 X, Y축의 소성 수축율을 0에 근접하게 제어하는 무수축 소성 기술이 요구되고 있다. 선행연구를 통하여 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 무수축 소성 기술 구현 가능성을 확인하였으나, 아직 해결해야 할 문제점들이 있다. glass가 $Al_2O_3$층으로 infiltration되는 과정에서 glass층이 de-lamination 되는 결함이 발견되었으며 이는 유전체 기판의 Q값을 낮추고 기판의 신뢰성에 악영향을 줄 수 있어 이에 대한 개선이 필요한 실정이다. 본 연구에서는 $Al_2O_3$/Glass/$Al_2O_3$ 구조의 glass infiltration법에 의한 선행 실험에서 관찰된 기판 내부의 de-lamination 현상에 대한 원인을 규명하고 해결책을 제시하고자 하였다. glass 유동과 바인더 burn-out이 동시에 진행됨에 따라 기공이 생성되며 glass가 점성유동함에 따라 이 기공이 glass층으로 모이게 되어 de-lamination 현상이 발생하는 것으로 사료된다. 이를 해결하기 위하여 de-lamination층에 $Al_2O_3$의 tamping을 시도하여 glass층의 기공이 빠져 나갈 수 있는 channel 을 형성하고, 남아있는 기공을 $Al_2O_3$로 채우는 효과를 얻을 수 있었다. 이에 따라 기판의 밀도와 Quality factor 값이 향상되었으며 미세구조가 치밀한 무수축 기판을 제작할 수 있었다.

• Applied Chemistry for Engineering
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• v.17 no.4
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• pp.369-374
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• 2006

$Rh-Pt/Al_{2}O_{3}$ catalysts were used for the first time to study its reaction characteristics in the asymmetric hydrogenation of ethyl pyruvate. The catalysts were prepared either by impregnation of Rh on a commercial $Pt/Al_{2}O_{3}$ or by sequential impregnation of Rh followed by impregnation of Pt on $Al_{2}O_{3}$. Reaction rate and enantiomeric excess (ee%) were compared according to the preparation method, Rh contents, and the reduction temperature of the catalyst. The physical characteristics of the catalysts were analyzed using XRD and TEM. Bimetallic $Rh-Pt/Al_{2}O_{3}$ catalysts showed an improved reaction rate and optical purity (63.6 ee%) with increasing the reduction temperature. The variation of the Rh contents as well as the preparation method elicited a big difference on the reaction rate, while enantiomeric excess (ee%) was lower (56~60%) with all bimetallic catalysts than with monometallic $Pt/Al_{2}O_{3}$ catalyst.