• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Advances in nano research
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• v.5 no.4
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• pp.303-311
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• 2017

The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs-nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ${\varepsilon}^*=0.039$ the sign of critical energy and volume is changed. We assume that at ${\varepsilon}={\varepsilon}^*$ the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (${\varepsilon}$ < ${\varepsilon}^*$), the bulk nucleation mechanism dominates. However, at ${\varepsilon}$ > ${\varepsilon}^*$, when the energy barrier becomes negative as well as a larger misfit provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for $Ga_{1-x-y}In_xAl_yN$ quasiternary system was calculated and studied and its 3D sketch was plotted.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.201-206
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• 2005

In this work, we tried to improve the fabrication process in HVPE (Hydride Vapor Phase Epitaxy) system by using Si(111) substrate with pre-deposited Al layer. PL measurements was done for samples with and without pre-deposited Al on Si and it was also examined the dependence of the optical characteristic properties on AlN buffer thickness for GaN/AIN/Al/Si. A sample with thin Al nucleation layer on Si substrate reveals a better optical property than the other. And it suggests that the thickness for AlN buffer layer with thin Al nucleation layer on Si(111) substrate is most proper about $260{\AA}$ to grow GaN in HVPE system. The surface morphology of GaN clearly shows the hexagonal crystallization. The XRD pattern showed strong peak at GaN{0001} direction.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.22 no.6
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• pp.813-822
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• 1998

The microexplosion of a slurry droplet was considered to be caused by the shell formation and the following pressure build-up in the shell which would be promoted by the suppression of evaporation, subsequent superheating and heterogeneous nucleation of liquid carrier. To closely investigate the pressure build-up and the heterogeneous nucleation, a numerical model was introduced by considering the internal temperature distributions with the shell formation, suppression of evaporation and pressure build-up inside. The microexplosion time was estimated by postulating the limit of superheat for heterogeneous nucleation. The simulation yielded a reasonably good agreement with experimental results for Al/n-heptane slurry droplets under various solid loadings.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.242-245
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• 2009

AlN crystals were grown by a sublimation process without seed crystals and the growth morphology of them was characterized. The grown AlN crystals were a polycrystalline phase, which had a diameter of $60\sim200\;{\mu}m$ and were grown with a growth rate of $0.2\sim0.5\;{\mu}n/hr$. It was observed that the as-grown crystals had a hexagonal crystal structure and revealed that these crystals were grown with a morphology of columnar morphology in the initial stage of the growth before they were enlarged in a way of a lateral growth behavior in the final stage. On the surface, a lot of pinholes were observed on the surface of crystals grown. The evolution of a growth morphology was characterized by optical and scanning electron microscopic observation.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.12
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• pp.1576-1585
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• 1997

The microexplosive combustion of a slurry droplet was investigated experimentally. The microexplosion has been approximately considered to be caused by pressure build-up in the shell and to be promoted by heterogeneous nucleation of liquid carrier, which is due to the suppression of evaporation and subsequent superheating of liquid carrier. To closely investigate the pressure build-up and the heterogeneous nucleation, the experiments were conducted in an electric combustor, of which temperature was controllable (400 K-900 K). And the effects of two aligned droplets on the interactive combustion and microexplosion were found in a hot post region of a flat flame burner. Transient internal temperature distributions for slurry droplets were measured. And the shell formation and the microexplosion of suspended A1/JP-8 and Al/n-heptane slurry droplets were examined with various surfactant concentrations (0.5-5 wt%) and solid loadings (10-50 wt.%). The microexplosion time of binary array of droplets was found to be less than that of the isolated droplet due to radiative interaction between droplets.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.224-228
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• 2000

Using a small amount of additives and amorphous Si₂N₂O powders, O-SiAlON ceramics have been hot-pressed and its microstructure and mechanical properties were investigated. Scandium oxide was demonstrated to be an effective densification additive for O-SiAlON. Amorphous Si₂N₂O was densified at relatively low temperatures and a microstructure with acicular grains was developed. Fine grains found in materials obtained from amorphous powders suggest that nucleation and crystallization of O-SiAlOH is relatively easy compared with the Si₃N₄-SiO₂reaction.

• Advances in nano research
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• v.1 no.4
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• pp.211-218
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• 2013

A low-cost, green and reproducible citric acid assisted synthesis of nanocrystalline $Al_{0.5}Ag_{0.5}TiO_3$ (n-AAT) powder is reported. X-ray, FTIR, energy dispersive X-ray, transmission electron microscopy and scanning electron microscopy analyses are performed to ascertain the formation of n-AAT. X-ray diffraction data analysis indicated the formation of monoclinic structure. Spherical shaped particles having the sizes of 3-15 nm are found. The mechanism of nano-transformation for the soft-chemical synthesis of n-AAT has been explained using simple organic chemistry rules and nucleation and growth theory. Dielectric study revealed that AAT ceramic might be a suitable candidate for capacitor applications.