• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.31-37
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• 1994

Aluminum films were deposited by the pyrolysis of triisobutylaluminum(TIBA) in a cold wall LPCVD system for the metallization of high level IC. the selectivity on Si/SiO2 substrate and the contact resistance on submicron contacts were investigated. The carbon free aluminum film could be obtained when the aluminum film was deposited at low substrate temperature. Contact resistances of CVD Al/n+ Si contacts whose contact size was 0.5 .mu.m werre as low as 20~40.OMEGA./ea, which is 30~50% of contact resistance obtained by sputtering technique.

• Korean Membrane Journal
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• v.4 no.1
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• pp.20-24
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• 2002

The surface of polysulfone membranes has been modified using the fluorine chemicals, ITFE (2-iodo-1,1,1-trifluoro-ethane F.W.=209.94) and PFPI (1H,1H-pentafluoro-n-propyl iodide F.W.=259.95), and PFI (1H,1H,2H,2H-perfluorohexyl iodide, F.W.=373.99) based on Friedel-Crafts reaction mechanism with varying reaction temperatures, reaction time, and catalysis types. The resulting membranes were characterized through mainly the contact angle measurement and pure water permeability. The smaller reactant shows the larger contact angles. FeBr$_3$ catalyst is more effective than AlCl$_3$. Typically, the PS film treated with ITFE at $25^{\circ}C$ under FeBr$_3$ catalyst showed the contact angle 78.5$^{\circ}C$ which indicated 10% over the value of unreacted PS films. More than 50% of pure water flux 8.0 g/$m^2$hr, reduced at reaction time 10 min relative to the original flux, 3.49 g/$m^2$hr.

• Journal of Mechanical Science and Technology
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• v.20 no.10
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• pp.1670-1679
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• 2006

The development of the oxidation, wear and corrosion resistant materials that could be used in severe environmental conditions is needed. The elementary technologies for surface modification include ion implantation and/or thin film coating. Furthermore, in order to develop ion implantation technique to the specimens with three-dimensional shapes, plasma-based ion implantation (PBII) techniques were investigated. As a result, it was found that the ion implantation and/or thin film coating used in this study were/was effective for improving the properties of materials, which include implantations of various kinds of ions into TiAl alloy, TiN films formed on surface of base material and coatings in high-temperature steam. The techniques proposed in this study provide useful information for all of the material systems required to use at elevated temperature. For the practical applications, several results will be presented along with laboratory test results.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.86.2-86
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• Polymer(Korea)
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• v.33 no.5
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• pp.407-412
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• 2009

Vacuum deposited N,N-di-1-naphthyl-N,N-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD) as a hole transporting (HTL) materials in OLEDs was placed on PEDOT-PSS, a hole injection layer (HIL). PEDOT-PSS was spin-coated on to the ITO glass. $C_{60}$-doped NPD-$C_{60}$(10 wt%) film was formed via co-evaporation process and the morphology of NPD-$C_{60}$ films was investigated using XRD and AFM. The J - V, L - V and current efficiency of multi -layered devices were characterized. According to XRD results, the deposited $C_{60}$ thin film was partially crystalline, but NPD-$C_{60}$ film was observed not to be crystalline, which indicates that $C_{60}$ molecules are uniformly dispersed in the NPD film. By using $C_{60}$-doped NPD-$C_{60}$ film as a HTL, the current density and luminance of multi-layered ITO/PEDOT-PSS/NPD-$C_{60}/Alq_3$/LiF/Al device were significantly increased by about 80% and its efficiency was improved by about 25% in this study.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

• Progress in Superconductivity
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• v.3 no.2
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• pp.135-139
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• 2002

We have fabricated high-quality c-axis-oriented $MgB_2$ thin films by using a pulsed laser deposition technique. The thin films grown on (1 1 0 2) $Al_2$$O_3$ substrates show an onset transition temperature of 39.2 K with a sharp transition width of ~0.15 K. X-ray diffraction patterns indicate a c-axis-oriented crystal structure perpendicular to the substrate surface. We observed high critical current densities ($J_{c}$) of ~ 16 $MA/\textrm{cm}^2$ at 15 K and under self-field, which is comparable to or exceeds those of cuprate high-temperature superconductors. The extrapolation $J_{c}$ at 5 K was estimated to be ~ 40 MA/$\textrm{cm}^2$, which is the highest record for $MgB_2$ compounds. At a magnetic field of 5 T, the $J_{c}$ of~ 0.1 $MA/\textrm{cm}^2$ was detected at 15 K, suggesting that this compound is very promising candidate for the practical applications at high temperature with lower power consumption. As a possible explanation for the high current-carving capability, the vortex-glass phase will be discussed.d.d.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.337-337
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• 2012

Dye sensitized solar cell (DSSC) having high efficiency with low cost was first reported by Gr$\ddot{a}$tzel et al. Many DSSC research groups attempt to enhance energy conversion efficiency by modifying the dye, electrolyte, Pt-coated electrode, and $TiO_2$ films. However, there are still some problems against realization of high-sensitivity DSSC such as the recombination of injected electrons in conduction band and the limited adsorption of dye on $TiO_2$ surface. The surface of $TiO_2$ is very important for improving hydrophilic property and dye adsorption on its surface. In this paper, we report a very efficient method to improve the efficiency and stability of DSSC with nano-structured $TiO_2$. Atmospheric plasma system was utilized for nitrogen plasma treatment on nano-structured $TiO_2$ film. We confirmed that the efficiency of DSSC was significantly dependent on plasma power. Relative in the $TiO_2$ surface change and characteristics after plasma was investigated by various analysis methods. The structure of $TiO_2$ films was examined by X-ray diffraction (XRD). The morphology of $TiO_2$ films was observed using a field emission scanning electron microscope (FE-SEM). The surface elemental composition was determined using X-ray photoelectron spectroscopy (XPS). Each of plasma power differently affected conversion efficiency of DSSC with plasma-treated $TiO_2$ compared to untreated DSSC under AM 1.5 G spectral illumination of $100mWcm^{-2}$.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.