• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.462-466
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• 2012

In this paper, heat-releasing composite sheets made of AlN, graphite, Al powder and acryl binder as thermoset were prepared using tape casting method. The crystal structure, morphology, thermal conductivity of heat-releasing composite sheet were measured by using X-ray diffractometer, field emission-scanning electron microscopy and laser flash instrument. It was found thermal conductivity of sheet was decided by solid content, composition including AlN, graphite, Al in heat-releasing composite sheets. As a result, 4.56 W/mK of thermal conductivity could be obtained by using LFA 447.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.167-170
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• 2011

Quaternary TiZrAlN nanocomposite thin films with a composition of 20.7Ti-22.2Zr-2.7Al-54.4N (at.%) were deposited by the closed-field unbalanced magnetron sputtering (CFUBMS) method and oxidized in air at temperatures between 500 and $700^{\circ}C$. The oxides formed were $TiO_2$, $ZrO_2$, and $Al_2O_3$. The films had inferior oxidation resistance because the amounts of $ZrO_2$ and $TiO_2$ were large while the amount of $Al_2O_3$ was small. The oxidation progressed primarily by the inward diffusion of oxygen and the outward diffusion of nitrogen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.111-111
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• 2009

In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.177-184
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• 1994

AlN-BN ceramics with BN contents in the range of 10 to 40 wt% were prepared by hot pressing using no additive, or 3 wt%, Y2O3 or CaO, which are common densification aids for AlN. And their machinability, bend strength, and microstructures were investigated. Both the main and radial cutting forces decreased with increasing BN content in all three kinds of samples. For the BN contents of 30 wt% or above, the cutting forces were lower than that of a mild steel tested at a same condition. Especially in the case of main forces, the values were less than a quarter of that of a mild steel, indicating excellent machinability. Bend strength (when the tensile surfaces of specimens were perpendicular to the hot pressing direction) also decreased with BN content mainly due to the much lower Young's modulus of BN compared to AlN. With the composition of 30 wt% BN at which the AlN-BN ceramics started to show better machinability than a mild steel, the bend strength was 150 to 160 MPa, which is greater than that of machinable glass-ceramics of a mica system. With tensile surfaces parallel to the hot pressing direction, however, the bend strength obtained for the samples processed with the sintering acids showed low values (about 40 MPa), since most BN particles had such orientation that their cleavage planes (i.e., basal planes) were perpendicular to the pressing direction.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.6
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• pp.331-337
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• 2010

Aluminum nitride (AlN) thin films containing various amounts of Co content have been deposited by using a two-facing targets type sputtering (TFTS) system. The deposited films were also annealed successively and isothermally at different temperatures. Annealing treatment can control the physical properties as well as the microstructure of AlN films with Co particles. High magnetization and high resistivity are obtainable in AlN films containing dispersed Co particles. The coercivity of the films does not depend on annealing time, but it increases with increasing annealing temperature due to the increase of the grain size. A high saturation magnetization of 46 kG and resistivity of 2200 ${\mu}{\Omega}$-cm was obtained for AlN films containing 25 at% Co.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.431-434
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• 2012

In this paper, heat-releasing sheets made of AlN powder and acryl binder as thermoset were prepared using tape casting method. The crystal structure and morphology, the thermal properties as nonvolatile solid content and thermal conductivity, and the surface resistance of heat-releasing sheet were measured by using X-ray diffractometer, field emission-scanning electron microscopy, thermo gravimetric analyzer and laser flash instrument, and surface resistance meter. It was proved that thermal conductivity is greatly affected by the content of binder in heat-releasing sheet. Superior thermal conductivity above 3.5 W/mK and suface resistance were obtained at heat-releasing sheet with above 90% of AlN powder.

• Journal of the Korean Society of Groundwater Environment
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• v.1 no.1
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• pp.6-9
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• 1994

Previously reported Ar/N$_2$ratios in groundwater have been measured by single ion monitoring (Barnes et al., 1975; Vogel et al., 1981; Mariotti et al., 1988). The detector geometry and flared flight tube in VG Optima isotopic ratio mass spectrometer appeared to be fortuitously aligned for the simultaneous measurement of Ar/N$_2$ratios. Method development included mechanical adjustments to optimize the mass spectrometer for Ar/N$_2$ratio measurements followed by development of a preparation system for the extraction of air-saturated water samples. Samples containing known Ar/N$_2$ratios were used to assess accuracy and precision, and to test the applicability of methods for measurements of aqueous Ar/N$_2$ratios. The results indicated that the prepared air-saturated water samples were almost identical to the predicted Ar/N$_2$ratios (p ＜0.001). Groundwater samples were collected from on-going research sites, Shelton and Grand Island, Nebraska. Samples from the Grand Island sludge injection site form a lower boundary for worldwide reported Ar/N$_2$ratios. These lower Ar/N$_2$ratios can be explained by the production of nitrogen gas from this site, where denitrification was reported previously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.87-95
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• 1995

The effect of stuffing of TiN on the diffusion barrier property between A1 and Si was investigated. The stuffing of TiN was performed by annealing in a Nz ambient at $450^{\circ}C$ for 30min. By TEM analysis, it is identified that there are solid-free or open spaces of a b u t 10-20$\AA$ between the grains of asdeposited TiN. In the case of stuffed TiN, the width of solid-free or open spaces has been reduced to about 10$\AA$ or below. The combination of RBS and AES analyses showed that the asdeposited TiN had about 7at.% of oxygen, and that the stuffed TiN had about 10-15at.% of oxygen. The diffusion barrier test result shows that after annealing at $650^{\circ}C$ for lhour, the asdeposited TiN fails due to the formation of A1 spikes and Si pits in the Si substrate. However, in the case of stuffed TiN, there is no indication of Al spikes and Si pits at the same annealing condition. Thus, it is concluded that this stuffing of TiN significantly improves the diffusion barrier property of TiN between A1 and Si. It is considered that the stuffing effect results from the reduced diffusion through grain boundaries due to the reduced spacing of grain boundaries.